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Results: 1-7 |
Results: 7
DX centers in indium-doped Cd0.9Mn0.1Te
Authors: Placzek-Popko, E Szatkowski, J Sieranski, K Fialkowski, J Wrobel, JM Becla, P
Citation: E. Placzek-popko et al., DX centers in indium-doped Cd0.9Mn0.1Te, OPT MATER, 18(1), 2001, pp. 163-165
He++-irradiated beryllium-doped Al0.5Ga0.5As MBE layers
Authors: Szatkowski, J Placzek-Popko, E Sieranski, K Johansen, A Fialkowski, J
Citation: J. Szatkowski et al., He++-irradiated beryllium-doped Al0.5Ga0.5As MBE layers, NUCL INST B, 178, 2001, pp. 252-255
Cd0.8Mn0.2Te :(In/Al) - Deep Level Transient Spectroscopy
Authors: Szatkowski, J Placzek-Popko, E Fialkowski, J Sieranski, K Hajdusianek, A Wrobel, JM Becla, P
Citation: J. Szatkowski et al., Cd0.8Mn0.2Te :(In/Al) - Deep Level Transient Spectroscopy, PHYSICA B, 292(1-2), 2000, pp. 114-116
Deep levels in He++ irradiated Be-doped Al0.5Ga0.5As MBE layers
Authors: Szatkowski, J Placzek-Popko, E Sieranski, K Hansen, OP Johansen, A Soerensen, C
Citation: J. Szatkowski et al., Deep levels in He++ irradiated Be-doped Al0.5Ga0.5As MBE layers, PHYSICA B, 274, 1999, pp. 718-721
Persistent photoconductivity and DLTS in indium-doped Cd0.9Mn0.1Te
Authors: Szatkowski, J Placzek-Popko, E Sieranski, K Fialkowski, J Wrobel, JM Becla, P
Citation: J. Szatkowski et al., Persistent photoconductivity and DLTS in indium-doped Cd0.9Mn0.1Te, PHYSICA B, 274, 1999, pp. 879-882
Defect studies in Cd0.95Mn0.05Te : Ga by DLTS
Authors: Szatkowski, J Placzek-Popko, E Sieranski, K Bieg, B
Citation: J. Szatkowski et al., Defect studies in Cd0.95Mn0.05Te : Ga by DLTS, J CRYST GR, 197(3), 1999, pp. 684-687
Deep hole traps in Be-doped Al0.5Ga0.5As layers grown by molecular beam epitaxy
Authors: Szatkowski, J Placzek-Popko, E Sieranski, K Hansen, OP
Citation: J. Szatkowski et al., Deep hole traps in Be-doped Al0.5Ga0.5As layers grown by molecular beam epitaxy, J APPL PHYS, 86(3), 1999, pp. 1433-1438
Risultati: 1-7 |