Citation: T. Ambrose et al., Magnetotransport properties of single crystal Co2MnGe/NM/Co2MnGe trilayersepitaxially grown on GaAs (001), J APPL PHYS, 89(11), 2001, pp. 7522-7524
Authors:
Bussmann, K
Prinz, GA
Cheng, SF
Bass, R
Wang, D
Citation: K. Bussmann et al., Switching of vertical giant magnetoresistance devices by current through the device (vol 75, pg 2476, 1999), APPL PHYS L, 76(26), 2000, pp. 4013-4013
Citation: T. Ambrose et al., Epitaxial growth and magnetic properties of single-crystal Co2MnGe Heusleralloy films on GaAs (001), APPL PHYS L, 76(22), 2000, pp. 3280-3282
Authors:
Lubitz, P
Cheng, SF
Bussmann, K
Prinz, GA
Krebs, JJ
Daughton, JM
Wang, D
Citation: P. Lubitz et al., Structures with improved magnetic characteristics for giant magnetoresistance applications, J APPL PHYS, 85(8), 1999, pp. 5027-5029
Authors:
Ambrose, T
Krebs, JJ
Bussmann, K
Prinz, GA
Citation: T. Ambrose et al., Magnetic and structural properties of face-centered-cubic FexCo1-x alloys on diamond, J APPL PHYS, 85(8), 1999, pp. 5066-5068
Citation: K. Bussmann et al., Switching of vertical giant magnetoresistance devices by current through the device, APPL PHYS L, 75(16), 1999, pp. 2476-2478
Authors:
Wang, D
Daughton, JM
Bussmann, K
Prinz, GA
Citation: D. Wang et al., Magnetic properties of very thin single and multilayer NiFeCo and CoFe films deposited by sputtering, J APPL PHYS, 83(11), 1998, pp. 7034-7036