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Results: 1-23 |
Results: 23
STABLE TRANSFORMATION OF THE YELLOW-FEVER MOSQUITO, AEDES-AEGYPTI, WITH THE HERMES ELEMENT FROM THE HOUSEFLY
Authors: JASINSKIENE N COATES CJ BENEDICT MQ CORNEL AJ RAFFERTY CS JAMES AA COLLINS FH
Citation: N. Jasinskiene et al., STABLE TRANSFORMATION OF THE YELLOW-FEVER MOSQUITO, AEDES-AEGYPTI, WITH THE HERMES ELEMENT FROM THE HOUSEFLY, Proceedings of the National Academy of Sciences of the United Statesof America, 95(7), 1998, pp. 3743-3747
DESIGN AND BENCHMARKING OF BCPMOS VERSUS SCPMOS FOR AN EVOLUTIONARY 0.25-MU-M CMOS TECHNOLOGY
Authors: VUONG HH ESHRAGHI SA RAFFERTY CS HILLENIUS SJ PINTO MR DIODATO PW CONG HI ZEITZOFF PM
Citation: Hh. Vuong et al., DESIGN AND BENCHMARKING OF BCPMOS VERSUS SCPMOS FOR AN EVOLUTIONARY 0.25-MU-M CMOS TECHNOLOGY, I.E.E.E. transactions on electron devices, 45(4), 1998, pp. 991-993
MODELING OF THE ION MASS EFFECT ON TRANSIENT ENHANCED DIFFUSION - DEVIATION FROM THE -MODEL(1)
Authors: PELAZ L GILMER GH JARAIZ M HERNER SB GOSSMANN HJ EAGLESHAM DJ HOBLER G RAFFERTY CS BARBOLLA J
Citation: L. Pelaz et al., MODELING OF THE ION MASS EFFECT ON TRANSIENT ENHANCED DIFFUSION - DEVIATION FROM THE -MODEL(1), Applied physics letters, 73(10), 1998, pp. 1421-1423
THE ANOPHELES-GAMBIAE TRYPTOPHAN OXYGENASE GENE EXPRESSED FROM A BACULOVIRUS PROMOTER COMPLEMENTS DROSOPHILA-MELANOGASTER VERMILION
Authors: BESANSKY NJ MUKABAYIRE O BENEDICT MQ RAFFERTY CS HAMM DM MCNITT L
Citation: Nj. Besansky et al., THE ANOPHELES-GAMBIAE TRYPTOPHAN OXYGENASE GENE EXPRESSED FROM A BACULOVIRUS PROMOTER COMPLEMENTS DROSOPHILA-MELANOGASTER VERMILION, Insect biochemistry and molecular biology, 27(8-9), 1997, pp. 803-805
TRANSIENT EXPRESSION OF THE DROSOPHILA-MELANOGASTER CINNABAR GENE RESCUES EYE COLOR IN THE WHITE EYE (WE) STRAIN OF AEDES-AEGYPTI
Authors: CORNEL AJ BENEDICT MQ RAFFERTY CS HOWELLS AJ COLLINS FH
Citation: Aj. Cornel et al., TRANSIENT EXPRESSION OF THE DROSOPHILA-MELANOGASTER CINNABAR GENE RESCUES EYE COLOR IN THE WHITE EYE (WE) STRAIN OF AEDES-AEGYPTI, Insect biochemistry and molecular biology, 27(12), 1997, pp. 993-997
PHYSICAL-MECHANISMS OF TRANSIENT ENHANCED DOPANT DIFFUSION IN ION-IMPLANTED SILICON
Authors: STOLK PA GOSSMANN HJ EAGLESHAM DJ JACOBSON DC RAFFERTY CS GILMER GH JARAIZ M POATE JM LUFTMAN HS HAYNES TE
Citation: Pa. Stolk et al., PHYSICAL-MECHANISMS OF TRANSIENT ENHANCED DOPANT DIFFUSION IN ION-IMPLANTED SILICON, Journal of applied physics, 81(9), 1997, pp. 6031-6050
B-DIFFUSION AND CLUSTERING IN ION-IMPLANTED SI - THE ROLE OF B-CLUSTER PRECURSORS
Authors: PELAZ L JARAIZ M GILMER GH GOSSMANN HJ RAFFERTY CS EAGLESHAM DJ POATE JM
Citation: L. Pelaz et al., B-DIFFUSION AND CLUSTERING IN ION-IMPLANTED SI - THE ROLE OF B-CLUSTER PRECURSORS, Applied physics letters, 70(17), 1997, pp. 2285-2287
DIFFUSION PARAMETERS OF INDIUM FOR SILICON PROCESS MODELING
Authors: KIZILYALLI IC RICH TL STEVIE FA RAFFERTY CS
Citation: Ic. Kizilyalli et al., DIFFUSION PARAMETERS OF INDIUM FOR SILICON PROCESS MODELING, Journal of applied physics, 80(9), 1996, pp. 4944-4947
EFFECTS OF OXIDE INTERFACE TRAPS AND TRANSIENT ENHANCED DIFFUSION ON THE PROCESS MODELING OF PMOS DEVICES
Authors: VUONG HH RAFFERTY CS ESHRAGHI SA LENTZ JL ZEITZOFF PM PINTO MR HILLENIUS SJ
Citation: Hh. Vuong et al., EFFECTS OF OXIDE INTERFACE TRAPS AND TRANSIENT ENHANCED DIFFUSION ON THE PROCESS MODELING OF PMOS DEVICES, I.E.E.E. transactions on electron devices, 43(7), 1996, pp. 1144-1152
THE DOSE, ENERGY, AND TIME-DEPENDENCE OF SILICON SELF-IMPLANTATION INDUCED TRANSIENT ENHANCED DIFFUSION AT 750-DEGREES-C
Authors: CHAO HS GRIFFIN PB PLUMMER JD RAFFERTY CS
Citation: Hs. Chao et al., THE DOSE, ENERGY, AND TIME-DEPENDENCE OF SILICON SELF-IMPLANTATION INDUCED TRANSIENT ENHANCED DIFFUSION AT 750-DEGREES-C, Applied physics letters, 69(14), 1996, pp. 2113-2115
SIMULATION OF CLUSTER EVAPORATION AND TRANSIENT ENHANCED DIFFUSION INSILICON
Authors: RAFFERTY CS GILMER GH JARAIZ M EAGLESHAM D GOSSMANN HJ
Citation: Cs. Rafferty et al., SIMULATION OF CLUSTER EVAPORATION AND TRANSIENT ENHANCED DIFFUSION INSILICON, Applied physics letters, 68(17), 1996, pp. 2395-2397
TECHNOLOGY CAD AT AT-AND-T
Authors: LLOYD P MCANDREW CC MCLENNAN MJ NASSIF SR SINGHAL K SINGHAL K ZEITZOFF PM DARWISH MN HARUTA K LENTZ JL VUONG HH PINTO MR RAFFERTY CS KIZILYALLI IC
Citation: P. Lloyd et al., TECHNOLOGY CAD AT AT-AND-T, Microelectronics, 26(2-3), 1995, pp. 79-97
INFLUENCE OF FLUORINE IMPLANT ON BORON-DIFFUSION - DETERMINATION OF PROCESS MODELING PARAMETERS
Authors: VUONG HH GOSSMANN HJ RAFFERTY CS LUFTMAN HS UNTERWALD FC JACOBSON DC AHRENS RE BOONE T ZEITZOFF PM
Citation: Hh. Vuong et al., INFLUENCE OF FLUORINE IMPLANT ON BORON-DIFFUSION - DETERMINATION OF PROCESS MODELING PARAMETERS, Journal of applied physics, 77(7), 1995, pp. 3056-3060
DETERMINATION OF SI SELF-INTERSTITIAL DIFFUSIVITIES FROM THE OXIDATION-ENHANCED DIFFUSION IN B-DOPING-SUPERLATTICES - THE INFLUENCE OF THE MARKER LAYERS
Authors: GOSSMANN HJ GILMER GH RAFFERTY CS UNTERWALD FC BOONE T POATE JM LUFTMAN HS FRANK W
Citation: Hj. Gossmann et al., DETERMINATION OF SI SELF-INTERSTITIAL DIFFUSIVITIES FROM THE OXIDATION-ENHANCED DIFFUSION IN B-DOPING-SUPERLATTICES - THE INFLUENCE OF THE MARKER LAYERS, Journal of applied physics, 77(5), 1995, pp. 1948-1951
FAST METAL DIFFUSERS IN SI IN THE PRESENCE OF SI SELF-INTERSTITIAL TRAPS
Authors: GOSSMANN HJ STOLK PA EAGLESHAM DJ RAFFERTY CS POATE JM
Citation: Hj. Gossmann et al., FAST METAL DIFFUSERS IN SI IN THE PRESENCE OF SI SELF-INTERSTITIAL TRAPS, Applied physics letters, 67(21), 1995, pp. 3135-3137
THE ROLE OF THE SURFACE IN TRANSIENT ENHANCED DIFFUSION
Authors: LIM DR RAFFERTY CS KLEMENS FP
Citation: Dr. Lim et al., THE ROLE OF THE SURFACE IN TRANSIENT ENHANCED DIFFUSION, Applied physics letters, 67(16), 1995, pp. 2302-2304
BEHAVIOR OF INTRINSIC SI POINT-DEFECTS DURING ANNEALING IN VACUUM
Authors: GOSSMANN HJ RAFFERTY CS UNTERWALD FC BOONE T MOGI TK THOMPSON MO LUFTMAN HS
Citation: Hj. Gossmann et al., BEHAVIOR OF INTRINSIC SI POINT-DEFECTS DURING ANNEALING IN VACUUM, Applied physics letters, 67(11), 1995, pp. 1558-1560
TIME-DEPENDENCE OF DOPANT DIFFUSION IN DELTA-DOPED SI FILMS AND PROPERTIES OF SI POINT-DEFECTS - RESPONSE
Authors: GOSSMANN HJ RAFFERTY CS VREDENBERG AM LUFTMAN HS UNTERWALD FC EAGLESHAM DJ JACOBSON DC BOONE T POATE JM
Citation: Hj. Gossmann et al., TIME-DEPENDENCE OF DOPANT DIFFUSION IN DELTA-DOPED SI FILMS AND PROPERTIES OF SI POINT-DEFECTS - RESPONSE, Applied physics letters, 65(10), 1994, pp. 1322-1323
TIME-DEPENDENCE OF DOPANT DIFFUSION IN DELTA-DOPED SI FILMS AND PROPERTIES OF SI POINT-DEFECTS
Authors: GOSSMANN HJ RAFFERTY CS VREDENBERG AM LUFTMAN HS UNTERWALD FC EAGLESHAM DJ JACOBSON DC BOONE T POATE JM
Citation: Hj. Gossmann et al., TIME-DEPENDENCE OF DOPANT DIFFUSION IN DELTA-DOPED SI FILMS AND PROPERTIES OF SI POINT-DEFECTS, Applied physics letters, 64(3), 1994, pp. 312-314
ACTIVE-GATE THIN-FILM-TRANSISTOR
Authors: LIFSHITZ N LURYI S PINTO MR RAFFERTY CS
Citation: N. Lifshitz et al., ACTIVE-GATE THIN-FILM-TRANSISTOR, IEEE electron device letters, 14(8), 1993, pp. 394-395
SELF-ALIGNED METALLIZATION TECHNIQUE FOR DEEP-SUBMICRON ICS
Authors: LIFSHITZ N PINTO MR RAFFERTY CS FANG SC
Citation: N. Lifshitz et al., SELF-ALIGNED METALLIZATION TECHNIQUE FOR DEEP-SUBMICRON ICS, IEEE electron device letters, 14(11), 1993, pp. 518-519
DIFFUSION OF DOPANTS IN B-DELTA-DOPED AND SB-DELTA-DOPED SI FILMS GROWN BY SOLID-PHASE EPITAXY
Authors: GOSSMANN HJ VREDENBERG AM RAFFERTY CS LUFTMAN HS UNTERWALD FC JACOBSON DC BOONE T POATE JM
Citation: Hj. Gossmann et al., DIFFUSION OF DOPANTS IN B-DELTA-DOPED AND SB-DELTA-DOPED SI FILMS GROWN BY SOLID-PHASE EPITAXY, Journal of applied physics, 74(5), 1993, pp. 3150-3155
OXIDATION ENHANCED DIFFUSION IN SI B-DOPING SUPERLATTICES AND SI SELF-INTERSTITIAL DIFFUSIVITIES
Authors: GOSSMANN HJ RAFFERTY CS LUFTMAN HS UNTERWALD FC BOONE T POATE JM
Citation: Hj. Gossmann et al., OXIDATION ENHANCED DIFFUSION IN SI B-DOPING SUPERLATTICES AND SI SELF-INTERSTITIAL DIFFUSIVITIES, Applied physics letters, 63(5), 1993, pp. 639-641
Risultati: 1-23 |