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Results:
1-17
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Results: 17
Authors:
RAOULT F
BOSCHERON ACL
HUSSON D
SAUTERET C
MODENA A
MALKA V
DORCHIES F
MIGUS A
Citation: F. Raoult et al., EFFICIENT GENERATION OF NARROW-BANDWIDTH PICOSECOND PULSES BY FREQUENCY-DOUBLING OF FEMTOSECOND CHIRPED PULSES, Optics letters, 23(14), 1998, pp. 1117-1119
Authors:
AMRANI M
SEHIL H
MENEZLA R
BENAMARA Z
RAOULT F
Citation: M. Amrani et al., STUDY OF LATERAL POLYSILICON PN DIODES C-V CHARACTERISTICS - MODELINGAND EXPERIMENTS, Solid-state electronics, 42(11), 1998, pp. 1925-1931
Authors:
TALAIGHIL B
TOUTAH H
RAHAL A
MOURGUES K
PICHON L
RAOULT F
BONNAUD O
MOHAMMEDBRAHIM T
Citation: B. Talaighil et al., GATE BIAS STRESS IN HYDROGENATED AND UNHYDROGENATED POLYSILICON THIN-FILM TRANSISTORS, Microelectronics and reliability, 38(6-8), 1998, pp. 1149-1153
Authors:
AMRANI M
MENEZLA R
SEHIL H
RAOULT F
BOUDIAF H
BENAMARA Z
Citation: M. Amrani et al., SIMULATION OF THE HIGH-FREQUENCY C-V CHARACTERISTICS OF LATERAL PN JUNCTIONS ON POLYSILICON FILMS, Materials science & engineering. B, Solid-state materials for advanced technology, 49(3), 1997, pp. 197-201
Authors:
SEHIL H
RAHMANI NM
PICHON L
MENEZLA R
RAOULT F
BENAMARA Z
Citation: H. Sehil et al., CHARACTERIZATION OF THE POLYSILICON THIN-FILM TRANSISTORS ELABORATED IN HIGH AND LOW-TEMPERATURE PROCESSES - STUDY OF THE DENSITY OF TRAPS, Synthetic metals, 90(3), 1997, pp. 181-185
Authors:
PICHON L
RAOULT F
MOURGUES K
KISSION K
MOHAMMEDBRAHIM T
BONNAUD O
Citation: L. Pichon et al., LOW-TEMPERATURE (LESS-THAN-OR-EQUAL-TO-600 DEGREES-C) UNHYDROGENATED IN-SITU DOPED POLYSILICON THIN-FILM TRANSISTORS - TOWARDS A TECHNOLOGYFOR FLAT-PANEL DISPLAYS, Thin solid films, 296(1-2), 1997, pp. 133-136
Authors:
LOHEAC JL
RAOULT F
BONNAUD O
TAURIN M
Citation: Jl. Loheac et al., ANALYSIS FOR THE RELIABILITY OF THE INTRINSIC BASE ION-IMPLANTATION OF A 3 GHZ I(2)L BIPOLAR PROCESS FROM THE MEASURE OF INTEGRATED RESISTANCES - FROM THE RESULTS, SETTING OF RULES FOR AN EXPERT-SYSTEM, Microelectronics and reliability, 37(1), 1997, pp. 179-186
Authors:
PICHON L
RAOULT F
MOHAMEDBRAHIM T
BONNAUD O
SEHIL H
Citation: L. Pichon et al., EFFECTS OF THE IN-SITU DRAIN DOPING ON HOT-CARRIER DEGRADATION IN POLYSILICON THIN-FILM TRANSISTORS, Solid-state electronics, 39(7), 1996, pp. 1065-1069
Authors:
PICHON L
RAOULT F
BONNAUD O
PINEL J
SARRET M
Citation: L. Pichon et al., LOW-TEMPERATURE (LESS-THAN-OR-EQUAL-TO-600-DEGREES-C) POLYSILICON THIN-FILM TRANSISTORS HAVING IN-SITU DOPED POLYSILICON SOURCE AND DRAIN CONTACTS, IEEE electron device letters, 16(9), 1995, pp. 376-378
Authors:
SEHIL H
RAHMANI NM
RAOULT F
Citation: H. Sehil et al., THE ANALYSIS OF THE LEAKAGE CURRENT OF POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS AS A FUNCTION OF ACTIVE LAYER THICKNESS, Materials chemistry and physics, 42(2), 1995, pp. 101-105
Authors:
PICHON L
RAOULT F
BONNAUD O
Citation: L. Pichon et al., COMPARISON OF THE LOW-TEMPERATURE (LESS-THAN-OR-EQUAL-TO-600-DEGREES-C) POLYSILICON THIN-FILM TRANSISTORS (TFTS) WITH 2 KINDS OF GATE DIELECTRICS, Materials chemistry and physics, 39(4), 1995, pp. 313-316
Authors:
PICHON L
RAOULT F
BONNAUD O
SEHIL H
BRIAND D
Citation: L. Pichon et al., CONDUCTION BEHAVIOR OF LOW-TEMPERATURE (LESS-THAN-OR-EQUAL-TO-600-DEGREES-C) POLYSILICON TFTS WITH AN IN-SITU DRAIN DOPING LEVEL, Solid-state electronics, 38(8), 1995, pp. 1515-1521
Authors:
AZIZ A
LHERMITE H
RAOULT F
BONNAUD O
Citation: A. Aziz et al., REALIZATION IN CLEAN ROOM AND ELECTRICAL CHARACTERIZATION OF MICROELECTRONIC DEVICES BY DESS STUDENTS, Onde electrique, 75(1), 1995, pp. 22-24
Authors:
SARRET M
LIBA A
BONNAUD O
LEBIHAN F
FORTIN B
PICHON L
RAOULT F
Citation: M. Sarret et al., IN-SITU PHOSPHORUS-DOPED VLPCVD POLYSILICON LAYERS FOR POLYSILICON THIN-FILM TRANSISTORS, IEE proceedings. Part G. Circuits, devices and systems, 141(1), 1994, pp. 19-22
Authors:
SEHIL H
LHERMITE H
RAOULT F
COLIN Y
Citation: H. Sehil et al., EFFECT OF THICKNESS AND GRANULAR STRUCTURE ON THE ELECTRICAL-CONDUCTIVITY OF THE ACTIVE LAYER IN POLYCRYSTALLINE SILICON TFTS, Solid-state electronics, 37(1), 1994, pp. 159-168
Authors:
AZIZ A
BONNAUD O
LHERMITE H
RAOULT F
Citation: A. Aziz et al., LATERAL POLYSILICON PN DIODES - CURRENT-VOLTAGE CHARACTERISTICS SIMULATION BETWEEN 200-K AND 400-K USING A NUMERICAL APPROACH, I.E.E.E. transactions on electron devices, 41(2), 1994, pp. 204-211
Authors:
SEHIL H
RAOULT F
COLIN Y
BONNAUD O
Citation: H. Sehil et al., EFFECT OF THE ACTIVE LAYER THICKNESS ON THE LEAKAGE CURRENT IN P+P P+ACCUMULATION POLYCRYSTALLINE SILICON TFTS, Materials chemistry and physics, 34(1), 1993, pp. 62-67
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1-17
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