AAAAAA
Results:
1-14
|
Results: 14
Authors:
LAVIA F
ALBERTI A
RAINERI V
RAVESI S
RIMINI E
Citation: F. Lavia et al., THERMAL-STABILITY OF THIN COSI2 LAYERS ON POLYSILICON IMPLANTED WITH AS, BF2, AND SI, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1129-1136
Authors:
LAVIA F
ALBERTI A
RAINERI V
RAVESI S
RIMINI E
Citation: F. Lavia et al., THERMAL-STABILITY OF THIN COSI2 LAYERS GROWN ON AMORPHOUS-SILICON, Microelectronic engineering, 37-8(1-4), 1997, pp. 475-481
EFFECT OF OXYGEN ON THE GROWTH OF EPITAXIAL ERSI2-X FILMS ON SI BY THE REACTIVE DEPOSITION TECHNIQUE
Authors:
GRIMALDI MG
RAVESI S
SPINELLA C
YAN XS
Citation: Mg. Grimaldi et al., EFFECT OF OXYGEN ON THE GROWTH OF EPITAXIAL ERSI2-X FILMS ON SI BY THE REACTIVE DEPOSITION TECHNIQUE, Applied surface science, 102, 1996, pp. 138-141
Authors:
TERRASI A
RAVESI S
MARCELLINO C
SPINELLA C
PANNITTERI S
Citation: A. Terrasi et al., ION-BEAM-ASSISTED DEPOSITION OF AL FILMS ON SI, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(6), 1995, pp. 2827-2831
Authors:
RAVESI S
LAVIA F
RAINERI V
SPINELLA C
Citation: S. Ravesi et al., IMPROVED THERMAL-STABILITY OF COBALT SILICIDE FORMED BY ION-BEAM-ASSISTED DEPOSITION ON POLYSILICON, Applied surface science, 91(1-4), 1995, pp. 19-23
Authors:
GRIMALDI MG
YAN XS
SCERRA G
RAVESI S
SPINELLA C
Citation: Mg. Grimaldi et al., INFLUENCE OF OXYGEN ON THE FORMATION OF EPITAXIAL ERBIUM SILICIDE FILM ON [111]SI, Applied physics letters, 67(7), 1995, pp. 974-976
Authors:
TERRASI A
RAVESI S
GRIMALDI MG
SPINELLA C
Citation: A. Terrasi et al., ION-BEAM-ASSISTED GROWTH OF BETA-FESI2, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(2), 1994, pp. 289-294
Authors:
GRIMALDI MG
FRANZO G
RAVESI S
TERRASI A
SPINELLA C
LAMANTIA A
Citation: Mg. Grimaldi et al., FORMATION OF EPITAXIAL GAMMA-FESI(2) AND BETA-FESI(2) LAYERS ON (111)SI, Applied surface science, 74(1), 1994, pp. 19-26
Authors:
ARMELAO L
TERRASI A
BOARO M
RAVESI S
GRANOZZI G
Citation: L. Armelao et al., X-RAY PHOTOELECTRON-SPECTROSCOPY AND SCANNING ELECTRON-MICROSCOPY OF BETA-FESI2 FILMS GROWN BY ION-BEAM-ASSISTED DEPOSITION, Surface and interface analysis, 22(1-12), 1994, pp. 36-40
Authors:
TERRASI A
RAVESI S
SPINELLA C
GRIMALDI MG
LAMANTIA A
Citation: A. Terrasi et al., MORPHOLOGICAL AND STRUCTURAL STUDIES OF BETA-FESI2 FILMS GROWN BY ION-BEAM-ASSISTED DEPOSITION, Thin solid films, 241(1-2), 1994, pp. 188-191
Authors:
RAVESI S
TERRASI A
TORRISI L
FOTI G
Citation: S. Ravesi et al., ELECTRONIC-STRUCTURE OF 0.5 KEV AR+ IRRADIATED GRAPHITE, Radiation effects and defects in solids, 127(2), 1993, pp. 137-145
Authors:
LAVIA F
RAVESI S
TERRASI A
SPINELLA C
Citation: F. Lavia et al., FORMATION AND CHARACTERIZATION OF SI COSI2,/SI EPITAXIAL HETEROSTRUCTURES/, Applied surface science, 73, 1993, pp. 135-140
Authors:
RAVESI S
TERRASI A
LAMANTIA A
Citation: S. Ravesi et al., SURFACE-MORPHOLOGY AND EPITAXY OF BETA-FESI2 OBTAINED BY ION-BEAM-ASSISTED GROWTH, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 1371-1375
Authors:
TERRASI A
RAVESI S
GRIMALDI MG
Citation: A. Terrasi et al., EPITAXY ENHANCEMENT OF BETA-FESI2 GROWN BY ION-BEAM ASSISTED DEPOSITION, Applied physics letters, 62(17), 1993, pp. 2102-2104
Risultati:
1-14
|