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Authors: SILLS ES STRIDER W HYDE HJ ANKER D REES GJ DAVIS OK
Citation: Es. Sills et al., GYNECOLOGY, FORCED STERILIZATION, AND ASYLUM IN THE USA, Lancet, 351(9117), 1998, pp. 1729-1730

Authors: CHIA CK DAVID JPR REES GJ PLIMMER SA GREY R ROBSON PN
Citation: Ck. Chia et al., IMPACT IONIZATION IN ALXGA1-XAS GAAS SINGLE HETEROSTRUCTURES/, Journal of applied physics, 84(8), 1998, pp. 4363-4369

Authors: ONG DS LI KF REES GJ DAVID JPR ROBSON PN
Citation: Ds. Ong et al., A SIMPLE-MODEL TO DETERMINE MULTIPLICATION AND NOISE IN AVALANCHE PHOTODIODES, Journal of applied physics, 83(6), 1998, pp. 3426-3428

Authors: ONG DS LI KF REES GJ DUNN GM DAVID JPR ROBSON PN
Citation: Ds. Ong et al., A MONTE-CARLO INVESTIGATION OF MULTIPLICATION NOISE IN THIN P(-I-N(+)GAAS AVALANCHE PHOTODIODES()), I.E.E.E. transactions on electron devices, 45(8), 1998, pp. 1804-1810

Authors: GHIN R DAVID JPR PLIMMER SA HOPKINSON M REES GJ HERBERT DC WIGHT DR
Citation: R. Ghin et al., AVALANCHE MULTIPLICATION AND BREAKDOWN IN GA0.52IN0.48P DIODES, I.E.E.E. transactions on electron devices, 45(10), 1998, pp. 2096-2101

Authors: LI KF ONG DS DAVID JPR REES GJ TOZER RC ROBSON PN GREY R
Citation: Kf. Li et al., AVALANCHE MULTIPLICATION NOISE CHARACTERISTICS IN THIN GAAS P(-I-N(+)DIODES()), I.E.E.E. transactions on electron devices, 45(10), 1998, pp. 2102-2107

Authors: LI KF ONG DS DAVID JPR TOZER RC REES GJ ROBSON PN GREY R
Citation: Kf. Li et al., LOW EXCESS NOISE CHARACTERISTICS IN THIN AVALANCHE REGION GAAS DIODES, Electronics Letters, 34(1), 1998, pp. 125-126

Authors: ONG DS LI KF REES GJ DAVID JPR ROBSON PN DUNN GM
Citation: Ds. Ong et al., MONTE-CARLO ESTIMATION OF AVALANCHE NOISE IN THIN P(-I-N(+) GAAS DIODES()), Applied physics letters, 72(2), 1998, pp. 232-234

Authors: REES GJ
Citation: Gj. Rees, BUSH,GORDON,HENRY, Paediatric anaesthesia, 7(6), 1997, pp. 480-480

Authors: WILSON LR MOWBRAY DJ SKOLNICK MS PEGGS DW REES GJ DAVID JPR GREY R HILL G PATE MA
Citation: Lr. Wilson et al., ELECTRICAL AND OPTICAL BISTABILITY IN [111]GAINAS-GAAS PIEZOELECTRIC QUANTUM-WELLS, Superlattices and microstructures, 21(1), 1997, pp. 113-118

Authors: DUNN GM REES GJ DAVID JPR
Citation: Gm. Dunn et al., SIMULATION OF IMPACT IONIZATION BREAKDOWN IN MESFETS USING MONTE-CARLO METHODS, Semiconductor science and technology, 12(9), 1997, pp. 1147-1153

Authors: DUNN GM REES GJ DAVID JPR
Citation: Gm. Dunn et al., MONTE-CARLO SIMULATION OF IMPACT IONIZATION IN PHOTODETECTORS, Semiconductor science and technology, 12(6), 1997, pp. 692-697

Authors: DUNN GM REES GJ DAVID JPR PLIMMER SA HERBERT DC
Citation: Gm. Dunn et al., MONTE-CARLO SIMULATION OF IMPACT IONIZATION AND CURRENT MULTIPLICATION IN SHORT GAAS P(+)IN(+) DIODES, Semiconductor science and technology, 12(1), 1997, pp. 111-120

Authors: WILSON LR MOWBRAY DJ SKOLNICK MS ASTRATOV VN PEGGS DW REES GJ DAVID JPR GREY R HILL G PATE MA
Citation: Lr. Wilson et al., ELECTRICAL AND OPTICAL BISTABILITY IN INXGA1-XAS-GAAS PIEZOELECTRIC QUANTUM-WELLS, Physical review. B, Condensed matter, 55(24), 1997, pp. 16045-16048

Authors: VALTUENA JF IZPURA I SANCHEZROJAS JL MUNOZ E KHOO EA DAVID JPR WOODHEAD J GREY R REES GJ
Citation: Jf. Valtuena et al., MEMORY EFFECTS ON PIEZOELECTRIC INGAAS GAAS MQW PIN DIODES/, Microelectronics, 28(8-10), 1997, pp. 757-765

Authors: REES GJ
Citation: Gj. Rees, STRAINED-LAYER PIEZOELECTRIC SEMICONDUCTOR-DEVICES, Microelectronics, 28(8-10), 1997, pp. 957-967

Authors: PLIMMER SA DAVID JPR REES GJ GREY R HERBERT DC WIGHT DR HIGGS AW
Citation: Sa. Plimmer et al., IMPACT IONIZATION IN THIN ALXGA1-XAS (X=0.15 AND 0.30) P-I-N-DIODES, Journal of applied physics, 82(3), 1997, pp. 1231-1235

Authors: DUNN GM REES GJ DAVID JPR
Citation: Gm. Dunn et al., MONTE-CARLO SIMULATION OF IMPACT IONIZATION IN MESFETS, Electronics Letters, 33(7), 1997, pp. 639-640

Authors: DUNN GM REES GJ DAVID JPR
Citation: Gm. Dunn et al., MONTE-CARLO SIMULATION OF IMPACT IONIZATION IN PHOTODETECTORS, Electronics Letters, 33(4), 1997, pp. 337-339

Authors: KHOO EA PABLA AS WOODHEAD J DAVID JPR GREY R REES GJ
Citation: Ea. Khoo et al., LOW-THRESHOLD INGAAS ALGAAS LASERS GROWN ON (111)B GAAS SUBSTRATE/, Electronics Letters, 33(11), 1997, pp. 957-958

Authors: CHIA CK DAVID JPR REES GJ ROBSON PN PLIMMER SA GREY R
Citation: Ck. Chia et al., ELECTRON MULTIPLICATION IN ALXGA1-XAS GAAS HETEROSTRUCTURES/, Applied physics letters, 71(26), 1997, pp. 3877-3879

Authors: GHIN R DAVID JPR HOPKINSON M PATE MA REES GJ ROBSON PN
Citation: R. Ghin et al., IMPACT IONIZATION COEFFICIENTS IN GAINP P-I-N-DIODES, Applied physics letters, 70(26), 1997, pp. 3567-3569

Authors: REES GJ
Citation: Gj. Rees, THE TECHNIQUES OF APPLYING ARTIFICIAL-VENTILATION - HISTORICAL ABSTRACT, Paediatric anaesthesia, 6(3), 1996, pp. 194-194

Authors: DAVIES C NAOUSH HF REES GJ
Citation: C. Davies et al., RECOVERY OF POLY(ETHYLENE-TEREPHTHALATE) (PET) FROM USED X-RAY-FILM .1. A REVIEW OF CURRENT PROBLEMS AND A CHEMICAL METHOD FOR RECOVERY OF SILVER AND PET, Polymer international, 41(3), 1996, pp. 215-225

Authors: PEGGS DW SKOLNICK MS WHITTAKER DM HOGG RA WILLCOX ARK MOWBRAY DJ GREY R REES GJ HART L HOPKINSON M HILL G PATE MA
Citation: Dw. Peggs et al., WANNIER-STARK LADDER SPECTRA IN INXGA1-XAS-GAAS STRAINED-LAYER PIEZOELECTRIC SUPERLATTICES, Solid-state electronics, 40(1-8), 1996, pp. 167-170
Risultati: 1-25 | 26-50