Authors:
REEVES CM
TURCU ICE
STEVENSON JTM
ROSS AWS
GUNDLACH AM
PREWETT P
LAWES RA
ANASTASI P
BURGE R
MICHELL P
Citation: Cm. Reeves et al., FABRICATION OF 200NM FIELD-EFFECT TRANSISTORS BY X-RAY-LITHOGRAPHY USING A LASER-PLASMA X-RAY SOURCE, Microelectronic engineering, 30(1-4), 1996, pp. 187-190
Authors:
TURCU ICE
REEVES CM
STEVENSON JTM
ROSS AWS
GUNDLACH AM
PREWETT P
ANASTASI P
KOEK B
MITCHELL P
LAKE P
Citation: Ice. Turcu et al., 180NM X-RAY-LITHOGRAPHY WITH A HIGH-REPETITION-RATE LASER-PLASMA SOURCE, Microelectronic engineering, 27(1-4), 1995, pp. 295-298
Authors:
REEVES CM
TURCU ICE
PREWETT PD
GUNDLACH AM
STEVENSON JT
WALTON AJ
ROSS AWS
LAWES RA
ANASTASI P
BURGE R
MITCHELL P
Citation: Cm. Reeves et al., FABRICATION OF 200 NM FIELD-EFFECT TRANSISTOR BY X-RAY-LITHOGRAPHY WITH A LASER-PLASMA X-RAY SOURCE, Electronics Letters, 31(25), 1995, pp. 2218-2219
Authors:
REEVES CM
WIND SJ
HOHN FJ
BUCCHIGNANO JJ
LII YT
KLAUS DP
Citation: Cm. Reeves et al., FABRICATION AND CHARACTERIZATION OF COMPACT 100NM SCALE METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS, Microelectronic engineering, 21(1-4), 1993, pp. 409-418
Authors:
WALTON AJ
FALLON M
STEVENSON JTM
ROSS AWS
REEVES CM
Citation: Aj. Walton et al., IMPROVED STRUCTURE FOR OPTIMIZATION OF FOCUS AND EXPOSURE FOR IC PRODUCTION, Electronics Letters, 29(17), 1993, pp. 1573-1574