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Results: 1-25 | 26-37
Results: 1-25/37
IMPACT IONIZATION IN ALXGA1-XAS GAAS SINGLE HETEROSTRUCTURES/
Authors: CHIA CK DAVID JPR REES GJ PLIMMER SA GREY R ROBSON PN
Citation: Ck. Chia et al., IMPACT IONIZATION IN ALXGA1-XAS GAAS SINGLE HETEROSTRUCTURES/, Journal of applied physics, 84(8), 1998, pp. 4363-4369
A SIMPLE-MODEL TO DETERMINE MULTIPLICATION AND NOISE IN AVALANCHE PHOTODIODES
Authors: ONG DS LI KF REES GJ DAVID JPR ROBSON PN
Citation: Ds. Ong et al., A SIMPLE-MODEL TO DETERMINE MULTIPLICATION AND NOISE IN AVALANCHE PHOTODIODES, Journal of applied physics, 83(6), 1998, pp. 3426-3428
A MONTE-CARLO INVESTIGATION OF MULTIPLICATION NOISE IN THIN P(-I-N(+)GAAS AVALANCHE PHOTODIODES())
Authors: ONG DS LI KF REES GJ DUNN GM DAVID JPR ROBSON PN
Citation: Ds. Ong et al., A MONTE-CARLO INVESTIGATION OF MULTIPLICATION NOISE IN THIN P(-I-N(+)GAAS AVALANCHE PHOTODIODES()), I.E.E.E. transactions on electron devices, 45(8), 1998, pp. 1804-1810
AVALANCHE MULTIPLICATION NOISE CHARACTERISTICS IN THIN GAAS P(-I-N(+)DIODES())
Authors: LI KF ONG DS DAVID JPR REES GJ TOZER RC ROBSON PN GREY R
Citation: Kf. Li et al., AVALANCHE MULTIPLICATION NOISE CHARACTERISTICS IN THIN GAAS P(-I-N(+)DIODES()), I.E.E.E. transactions on electron devices, 45(10), 1998, pp. 2102-2107
LOW EXCESS NOISE CHARACTERISTICS IN THIN AVALANCHE REGION GAAS DIODES
Authors: LI KF ONG DS DAVID JPR TOZER RC REES GJ ROBSON PN GREY R
Citation: Kf. Li et al., LOW EXCESS NOISE CHARACTERISTICS IN THIN AVALANCHE REGION GAAS DIODES, Electronics Letters, 34(1), 1998, pp. 125-126
MODAL AND THRESHOLD ANALYSIS OF DIELECTRIC-APERTURED VERTICAL-CAVITY SURFACE-EMITTING LASERS
Authors: CHANG KY WOODHEAD J ROBSON PN
Citation: Ky. Chang et al., MODAL AND THRESHOLD ANALYSIS OF DIELECTRIC-APERTURED VERTICAL-CAVITY SURFACE-EMITTING LASERS, Applied physics letters, 72(3), 1998, pp. 335-337
MONTE-CARLO ESTIMATION OF AVALANCHE NOISE IN THIN P(-I-N(+) GAAS DIODES())
Authors: ONG DS LI KF REES GJ DAVID JPR ROBSON PN DUNN GM
Citation: Ds. Ong et al., MONTE-CARLO ESTIMATION OF AVALANCHE NOISE IN THIN P(-I-N(+) GAAS DIODES()), Applied physics letters, 72(2), 1998, pp. 232-234
INFLUENCE OF ORDERING ON THE POLARIZATION CHARACTERISTICS OF GAINP VERTICAL-CAVITY SURFACE-EMITTING LASERS
Authors: CHEN YH WILKINSON CI WOODHEAD J DAVID JPR BUTTON CC ROBSON PN
Citation: Yh. Chen et al., INFLUENCE OF ORDERING ON THE POLARIZATION CHARACTERISTICS OF GAINP VERTICAL-CAVITY SURFACE-EMITTING LASERS, IEEE photonics technology letters, 9(2), 1997, pp. 143-145
HIGH-POWER, HIGH-SPEED SURFACE-EMITTING LEDS WITH AN INGAAS QUANTUM-WELL
Authors: HIROTANI M SALE TE WOODHEAD J ROBERTS JS ROBSON PN SAKA T KATO T
Citation: M. Hirotani et al., HIGH-POWER, HIGH-SPEED SURFACE-EMITTING LEDS WITH AN INGAAS QUANTUM-WELL, Journal of crystal growth, 170(1-4), 1997, pp. 390-393
POLARIZATION CHARACTERISTICS OF VISIBLE VCSELS
Authors: CHEN YH WILKINSON CI WOODHEAD J DAVID JPR BUTTON CC ROBSON PN
Citation: Yh. Chen et al., POLARIZATION CHARACTERISTICS OF VISIBLE VCSELS, Journal of crystal growth, 170(1-4), 1997, pp. 394-398
VISIBLE (683 TO 713 NM) ROOM-TEMPERATURE ALGAAS VERTICAL-CAVITY SURFACE-EMITTING LASERS (VCSEL)
Authors: SALE TE ROBERTS JS WOODHEAD J DAVID JPR ROBSON PN
Citation: Te. Sale et al., VISIBLE (683 TO 713 NM) ROOM-TEMPERATURE ALGAAS VERTICAL-CAVITY SURFACE-EMITTING LASERS (VCSEL), Journal of crystal growth, 170(1-4), 1997, pp. 399-403
ELECTRON MULTIPLICATION IN ALXGA1-XAS GAAS HETEROSTRUCTURES/
Authors: CHIA CK DAVID JPR REES GJ ROBSON PN PLIMMER SA GREY R
Citation: Ck. Chia et al., ELECTRON MULTIPLICATION IN ALXGA1-XAS GAAS HETEROSTRUCTURES/, Applied physics letters, 71(26), 1997, pp. 3877-3879
IMPACT IONIZATION COEFFICIENTS IN GAINP P-I-N-DIODES
Authors: GHIN R DAVID JPR HOPKINSON M PATE MA REES GJ ROBSON PN
Citation: R. Ghin et al., IMPACT IONIZATION COEFFICIENTS IN GAINP P-I-N-DIODES, Applied physics letters, 70(26), 1997, pp. 3567-3569
LOW-THRESHOLD PIEZOELECTRIC-STRAINED INGAAS-GAAS QW LASERS GROWN ON (211)B ORIENTED GAAS SUBSTRATES
Authors: SALE TE ROBERTS JS WHITBREAD ND ROBSON PN
Citation: Te. Sale et al., LOW-THRESHOLD PIEZOELECTRIC-STRAINED INGAAS-GAAS QW LASERS GROWN ON (211)B ORIENTED GAAS SUBSTRATES, IEEE photonics technology letters, 8(8), 1996, pp. 983-985
ROOM-TEMPERATURE VISIBLE (683-713 NM) ALL-ALGAAS VERTICAL-CAVITY SURFACE-EMITTING LASERS (VCSELS)
Authors: SALE TE ROBERTS JS WOODHEAD J ROBSON PN
Citation: Te. Sale et al., ROOM-TEMPERATURE VISIBLE (683-713 NM) ALL-ALGAAS VERTICAL-CAVITY SURFACE-EMITTING LASERS (VCSELS), IEEE photonics technology letters, 8(4), 1996, pp. 473-475
MODELING OF DIFFRACTION IN PILLAR VERTICAL-CAVITY SURFACE-EMITTING LASERS WITH EMBEDDED BRAGG LAYERS
Authors: BURTON RR STERN MS KENDALL PC ROBSON PN
Citation: Rr. Burton et al., MODELING OF DIFFRACTION IN PILLAR VERTICAL-CAVITY SURFACE-EMITTING LASERS WITH EMBEDDED BRAGG LAYERS, Optical and quantum electronics, 28(11), 1996, pp. 1677-1684
INVESTIGATION OF IMPACT IONIZATION IN THIN GAAS DIODES
Authors: PLIMMER SA DAVID JPR HERBERT DC LEE TW REES GJ HOUSTON PA GREY R ROBSON PN HIGGS AW WIGHT DR
Citation: Sa. Plimmer et al., INVESTIGATION OF IMPACT IONIZATION IN THIN GAAS DIODES, I.E.E.E. transactions on electron devices, 43(7), 1996, pp. 1066-1072
POLARIZATION CHARACTERISTICS OF INGAALP ALGAAS VISIBLE VERTICAL-CAVITY SURFACE-EMITTING LASERS/
Authors: CHEN YH WILKINSON CI WOODHEAD J BUTTON CC DAVID JPR PATE MA ROBSON PN
Citation: Yh. Chen et al., POLARIZATION CHARACTERISTICS OF INGAALP ALGAAS VISIBLE VERTICAL-CAVITY SURFACE-EMITTING LASERS/, Electronics Letters, 32(6), 1996, pp. 559-560
EXCITATION POWER AND BARRIER WIDTH DEPENDENCE OF PHOTOLUMINESCENCE INPIEZOELECTRIC MULTIQUANTUM-WELL P-I-N STRUCTURES
Authors: DAVID JPR SALE TE PABLA AS RODRIGUEZGIRONES PJ WOODHEAD J GREY R REES GJ ROBSON PN SKOLNICK MS HOGG RA
Citation: Jpr. David et al., EXCITATION POWER AND BARRIER WIDTH DEPENDENCE OF PHOTOLUMINESCENCE INPIEZOELECTRIC MULTIQUANTUM-WELL P-I-N STRUCTURES, Applied physics letters, 68(6), 1996, pp. 820-822
VCSEL DIFFRACTION-LOSS THEORY
Authors: BURTON RR STERN MS KENDALL PC ROBSON PN
Citation: Rr. Burton et al., VCSEL DIFFRACTION-LOSS THEORY, IEE proceedings. Optoelectronics, 142(2), 1995, pp. 77-81
VISIBLE VERTICAL-CAVITY SURFACE-EMITTING LASERS AT LAMBDA-LESS-THAN-650 NM
Authors: CHEN YH WOODHEAD J DAVID JPR BUTTON CC HOPKINSON M ROBERTS JS SALE TE ROBSON PN
Citation: Yh. Chen et al., VISIBLE VERTICAL-CAVITY SURFACE-EMITTING LASERS AT LAMBDA-LESS-THAN-650 NM, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 12-16
PHOTOLUMINESCENCE OF PIEZOELECTRIC STRAINED INGAAS-GAAS MULTIQUANTUM-WELL P-I-N STRUCTURES
Authors: DAVID JPR SALE TE PABLA AS RODRIQUEZGIRONES PJ WOODHEAD J GREY R REES GJ ROBSON PN SKOLNICK MS
Citation: Jpr. David et al., PHOTOLUMINESCENCE OF PIEZOELECTRIC STRAINED INGAAS-GAAS MULTIQUANTUM-WELL P-I-N STRUCTURES, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 42-46
GROWTH OF PSEUDOMORPHIC INGAAS GAAS QUANTUM-WELLS ON [111]B GAAS FOR STRAINED-LAYER, PIEZOELECTRIC, OPTOELECTRONIC DEVICES/
Authors: GREY R DAVID JPR HILL G PABLA AS PATE MA REES GJ ROBSON PN RODRIGUEZGIRONES PJ SALE TE WOODHEAD J FISHER TA HOGG RA MOWBRAY DJ SKOLNICK MS WHITTAKER DM WILLCOX ARK
Citation: R. Grey et al., GROWTH OF PSEUDOMORPHIC INGAAS GAAS QUANTUM-WELLS ON [111]B GAAS FOR STRAINED-LAYER, PIEZOELECTRIC, OPTOELECTRONIC DEVICES/, Microelectronics, 26(8), 1995, pp. 811-820
EFFECT OF MISFIT DISLOCATIONS ON LEAKAGE CURRENTS IN STRAINED MULTIQUANTUM-WELL STRUCTURES
Authors: DAVID JPR CHEN YH GREY R HILL G ROBSON PN KIGHTLEY P
Citation: Jpr. David et al., EFFECT OF MISFIT DISLOCATIONS ON LEAKAGE CURRENTS IN STRAINED MULTIQUANTUM-WELL STRUCTURES, Applied physics letters, 67(7), 1995, pp. 906-908
AVALANCHE BREAKDOWN IN ALXGA1-XAS ALLOYS AND AL0.3GA0.7AS GAAS MULTILAYERS/
Authors: DAVID JPR ALLAM J ADAMS AR ROBERTS JS GREY R REES GJ ROBSON PN
Citation: Jpr. David et al., AVALANCHE BREAKDOWN IN ALXGA1-XAS ALLOYS AND AL0.3GA0.7AS GAAS MULTILAYERS/, Applied physics letters, 66(21), 1995, pp. 2876-2878
Risultati: 1-25 | 26-37