AAAAAA

   
Results: 1-25 | 26-27
Results: 1-25/27
NATIVE EXTENDED DEFECTS IN ZN1-YGDYSE INXGA1-XAS HETEROSTRUCTURES/
Authors: MULLER B HEUN S LANTIER R RUBINI S PAGGEL JJ SORBA L BONANNI A LAZZARINO M BONANNI B FRANCIOSI A NAPOLITANI E ROMANATO F DRIGO A BONARD JM GANIERE JD LAZZARINI L SALVIATI G
Citation: B. Muller et al., NATIVE EXTENDED DEFECTS IN ZN1-YGDYSE INXGA1-XAS HETEROSTRUCTURES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 2334-2341
LATTICE CURVATURE OF INXGA1-XAS GAAS[001] GRADED BUFFER LAYERS/
Authors: ROMANATO F NATALI M NAPOLITANI E DRIGO AV BOSACCHI A FERRARI C FRANCHI S SALVIATI G
Citation: F. Romanato et al., LATTICE CURVATURE OF INXGA1-XAS GAAS[001] GRADED BUFFER LAYERS/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(6), 1998, pp. 3578-3581
MOVPE GROWTH OF WIDE BAND-GAP II-VI COMPOUNDS FOR NEAR-UV AND DEEP-BLUE LIGHT-EMITTING DEVICES
Authors: LOVERGINE N PRETE P LEO G CALCAGNILE L CINGOLANI R MANCINI AM ROMANATO F DRIGO AV
Citation: N. Lovergine et al., MOVPE GROWTH OF WIDE BAND-GAP II-VI COMPOUNDS FOR NEAR-UV AND DEEP-BLUE LIGHT-EMITTING DEVICES, Crystal research and technology, 33(2), 1998, pp. 183-195
C-12(ALPHA,ALPHA)C-12 RESONANT ELASTIC-SCATTERING AT 5.7 MEV AS A TOOL FOR CARBON QUANTIFICATION IN SILICON-BASED HETEROSTRUCTURES
Authors: BERTI M DESALVADOR D DRIGO AV ROMANATO F SAMBO A ZERLAUTH S STANGL J SCHAFFLER F BAUER G
Citation: M. Berti et al., C-12(ALPHA,ALPHA)C-12 RESONANT ELASTIC-SCATTERING AT 5.7 MEV AS A TOOL FOR CARBON QUANTIFICATION IN SILICON-BASED HETEROSTRUCTURES, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 143(3), 1998, pp. 357-370
BOND-LENGTH VARIATION IN INXGA1-XAS INP STRAINED EPITAXIAL LAYERS/
Authors: ROMANATO F DESALVADOR D BERTI M DRIGO A NATALI M TORMEN M ROSSETTO G PASCARELLI S BOSCHERINI F LAMBERTI C MOBILIO S
Citation: F. Romanato et al., BOND-LENGTH VARIATION IN INXGA1-XAS INP STRAINED EPITAXIAL LAYERS/, Physical review. B, Condensed matter, 57(23), 1998, pp. 14619-14622
LATTICE-MATCHED ZN1-YCDYSE INXGA1-XAS(001) HETEROSTRUCTURES/
Authors: MULLER BH LANTIER R SORBA L RUBINI S LAZZARINO M HEUN S BONANNI A FRANCIOSI A NAPOLITANI E ROMANATO F DRIGO A
Citation: Bh. Muller et al., LATTICE-MATCHED ZN1-YCDYSE INXGA1-XAS(001) HETEROSTRUCTURES/, Journal of crystal growth, 185, 1998, pp. 21-25
LATTICE-PARAMETER IN SI1-YCY EPILAYERS - DEVIATION FROM VEGARDS RULE
Authors: BERTI M DESALVADOR D DRIGO AV ROMANATO F STANGL J ZERLAUTH S SCHAFFER F BAUER G
Citation: M. Berti et al., LATTICE-PARAMETER IN SI1-YCY EPILAYERS - DEVIATION FROM VEGARDS RULE, Applied physics letters, 72(13), 1998, pp. 1602-1604
DEEP BLUE-EMITTING ZNS ZNSE MULTIPLE-QUANTUM-WELL LASERS GROWN BY MOVPE ON (001)GAAS/
Authors: MAZZER M CALCAGNILE L LEO G SALVIATI G ZANOTTIFREGONARA C LOVERGINE N PRETE P IMBRIANI G CINGOLANI R MANCINI AM ROMANATO F DRIGO AV
Citation: M. Mazzer et al., DEEP BLUE-EMITTING ZNS ZNSE MULTIPLE-QUANTUM-WELL LASERS GROWN BY MOVPE ON (001)GAAS/, Materials science & engineering. B, Solid-state materials for advanced technology, 43(1-3), 1997, pp. 97-101
SELECTIVE ION-CHANNELING STUDY OF MISFIT DISLOCATION GRIDS IN SEMICONDUCTOR HETEROSTRUCTURES - THEORY AND EXPERIMENTS
Authors: MAZZER M DRIGO AV ROMANATO F SALVIATI G LAZZARINI L
Citation: M. Mazzer et al., SELECTIVE ION-CHANNELING STUDY OF MISFIT DISLOCATION GRIDS IN SEMICONDUCTOR HETEROSTRUCTURES - THEORY AND EXPERIMENTS, Physical review. B, Condensed matter, 56(11), 1997, pp. 6895-6910
CONTINUOUSLY GRADED BUFFERS FOR INGAAS GAAS STRUCTURES GROWN ON GAAS/
Authors: BOSACCHI A DERICCARDIS AC FRIGERI P FRANCHI S FERRARI C GENNARI S LAZZARINI L NASI L SALVIATI G DRIGO AV ROMANATO F
Citation: A. Bosacchi et al., CONTINUOUSLY GRADED BUFFERS FOR INGAAS GAAS STRUCTURES GROWN ON GAAS/, Journal of crystal growth, 175, 1997, pp. 1009-1015
STRUCTURAL CHARACTERIZATION AND SURFACE LATTICE STRAIN DETERMINATION OF ZNS GAAS HETEROSTRUCTURES GROWN BY METALORGANIC VAPOR-PHASE EPITAXY/
Authors: LEO G LAZZARINI L LOVERGINE N ROMANATO F DRIGO AV
Citation: G. Leo et al., STRUCTURAL CHARACTERIZATION AND SURFACE LATTICE STRAIN DETERMINATION OF ZNS GAAS HETEROSTRUCTURES GROWN BY METALORGANIC VAPOR-PHASE EPITAXY/, Journal of crystal growth, 173(3-4), 1997, pp. 277-284
STRUCTURAL STUDY OF (100)CDTE EPILAYERS GROWN BY MOVPE ON ZNTE BUFFERED AND UNBUFFERED (100)GAAS
Authors: MAZZER M LONGO M LEO G LOVERGINE N MANCINI AM DRIGO AV ROMANATO F FREGONARA CZ SALVIATI G
Citation: M. Mazzer et al., STRUCTURAL STUDY OF (100)CDTE EPILAYERS GROWN BY MOVPE ON ZNTE BUFFERED AND UNBUFFERED (100)GAAS, Journal of crystal growth, 170(1-4), 1997, pp. 553-557
INFLUENCE OF A ZNTE BUFFER LAYER ON THE STRUCTURAL QUALITY OF CDTE EPILAYERS GROWN ON (100)GAAS BY METALORGANIC VAPOR-PHASE EPITAXY
Authors: LEO G LONGO M LOVERGINE N MANCINI AM VASANELLI L DRIGO AV ROMANATO F PELUSO T TAPFER L
Citation: G. Leo et al., INFLUENCE OF A ZNTE BUFFER LAYER ON THE STRUCTURAL QUALITY OF CDTE EPILAYERS GROWN ON (100)GAAS BY METALORGANIC VAPOR-PHASE EPITAXY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 1739-1744
OPTIMIZATION OF THE STRUCTURAL AND OPTICAL-PROPERTIES OF ZNS EPILAYERS GROWN ON (100)GAAS BY MOVPE
Authors: LEO G LOVERGINE N PRETE P LONGO M CINGOLANI R MANCINI AM ROMANATO F DRIGO AV
Citation: G. Leo et al., OPTIMIZATION OF THE STRUCTURAL AND OPTICAL-PROPERTIES OF ZNS EPILAYERS GROWN ON (100)GAAS BY MOVPE, Journal of crystal growth, 159(1-4), 1996, pp. 144-147
HIGH-TEMPERATURE ANNEALINGS OF SB AND SB B HEAVILY IMPLANTED SILICON-WAFERS STUDIED BY NEAR GRAZING-INCIDENCE FLUORESCENCE EXTENDED X-RAY-ABSORPTION FINE-STRUCTURE/
Authors: REVENANTBRIZARD C REGNARD JR SOLMI S ARMIGLIATO A VALMORRI S CELLINI C ROMANATO F
Citation: C. Revenantbrizard et al., HIGH-TEMPERATURE ANNEALINGS OF SB AND SB B HEAVILY IMPLANTED SILICON-WAFERS STUDIED BY NEAR GRAZING-INCIDENCE FLUORESCENCE EXTENDED X-RAY-ABSORPTION FINE-STRUCTURE/, Journal of applied physics, 79(12), 1996, pp. 9037-9042
INVESTIGATION OF STRAIN RELAXATION MECHANISMS IN INGAAS GAAS SINGLE-LAYER FILMS/
Authors: ROMANATO F DRIGO AV FRANCESIO L FRANZOSI P LAZZARINI L SALVIATI G MAZZER M BRUNI MR SIMEONE MG
Citation: F. Romanato et al., INVESTIGATION OF STRAIN RELAXATION MECHANISMS IN INGAAS GAAS SINGLE-LAYER FILMS/, Microscopy microanalysis microstructures, 6(5-6), 1995, pp. 491-498
THE ROLE OF THE V III RATIO IN THE GROWTH AND STRUCTURAL-PROPERTIES OF METALORGANIC VAPOR-PHASE EPITAXY GAAS/GE HETEROSTRUCTURES/
Authors: PELOSI C ATTOLINI G BOCCHI C FRANZOSI P FRIGERI C BERTI M DRIGO AV ROMANATO F
Citation: C. Pelosi et al., THE ROLE OF THE V III RATIO IN THE GROWTH AND STRUCTURAL-PROPERTIES OF METALORGANIC VAPOR-PHASE EPITAXY GAAS/GE HETEROSTRUCTURES/, Journal of electronic materials, 24(11), 1995, pp. 1723-1730
ANOMALOUS LOW-TEMPERATURE DOPANT DIFFUSIVITY AND DEFECT STRUCTURE IN SB-IMPLANTED AND SB B-IMPLANTED ANNEALED SILICON SAMPLES/
Authors: ARMIGLIATO A ROMANATO F DRIGO A CARNERA A BRIZARD C REGNARD JR ALLAIN JL
Citation: A. Armigliato et al., ANOMALOUS LOW-TEMPERATURE DOPANT DIFFUSIVITY AND DEFECT STRUCTURE IN SB-IMPLANTED AND SB B-IMPLANTED ANNEALED SILICON SAMPLES/, Physical review. B, Condensed matter, 52(3), 1995, pp. 1859-1873
INHOMOGENEOUS STRAIN RELAXATION AND DEFECT DISTRIBUTION OF ZNTE LAYERS DEPOSITED ON (100)GAAS BY METALORGANIC VAPOR-PHASE EPITAXY
Authors: LOVERGINE N LIACI L GANIERE JD LEO G DRIGO AV ROMANATO F MANCINI AM VASANELLI L
Citation: N. Lovergine et al., INHOMOGENEOUS STRAIN RELAXATION AND DEFECT DISTRIBUTION OF ZNTE LAYERS DEPOSITED ON (100)GAAS BY METALORGANIC VAPOR-PHASE EPITAXY, Journal of applied physics, 78(1), 1995, pp. 229-235
LATTICE STRAIN RELAXATION OF ZNS LAYERS GROWN BY VAPOR-PHASE EPITAXY ON (100)GAAS
Authors: LOVERGINE N LEO G MANCINI AM ROMANATO F DRIGO AV GIANNINI C TAPFER L
Citation: N. Lovergine et al., LATTICE STRAIN RELAXATION OF ZNS LAYERS GROWN BY VAPOR-PHASE EPITAXY ON (100)GAAS, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 55-60
TRANSITION FROM ISLAND TO CONTINUOUS INP LAYER GROWTH ON (001)GAAS BYMOCVD
Authors: BERTI M DRIGO AV MAZZER M ROMANATO F LAZZARINI L FRANZOSI P SALVIATI G BERTONE D
Citation: M. Berti et al., TRANSITION FROM ISLAND TO CONTINUOUS INP LAYER GROWTH ON (001)GAAS BYMOCVD, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 214-218
MECHANISMS OF STRAIN RELEASE IN MOLECULAR-BEAM EPITAXY-GROWN INGAAS GAAS BUFFER HETEROSTRUCTURES/
Authors: FERRARI C FRANZOSI P LAZZARINI L SALVIATI G BERTI M DRIGO AV MAZZER M ROMANATO F BRUNI MR SIMEONE MG
Citation: C. Ferrari et al., MECHANISMS OF STRAIN RELEASE IN MOLECULAR-BEAM EPITAXY-GROWN INGAAS GAAS BUFFER HETEROSTRUCTURES/, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 510-514
TRANSMISSION ELECTRON-MICROSCOPY, HIGH-RESOLUTION X-RAY-DIFFRACTION AND RUTHERFORD BACKSCATTERING STUDY OF STRAIN RELEASE IN INGAAS GAAS BUFFER LAYERS/
Authors: SALVIATI G LAZZARINI L FERRARI C FRANZOSI P MILITA S ROMANATO F BERTI M MAZZER M DRIGO AV BRUNI MR SIMEONE MG GAMBACORTI N
Citation: G. Salviati et al., TRANSMISSION ELECTRON-MICROSCOPY, HIGH-RESOLUTION X-RAY-DIFFRACTION AND RUTHERFORD BACKSCATTERING STUDY OF STRAIN RELEASE IN INGAAS GAAS BUFFER LAYERS/, Scanning microscopy, 8(4), 1994, pp. 943-955
ELECTRON AND ION-BEAM ANALYSIS OF COMPOSITION AND STRAIN IN SI1-XGEX SI HETEROSTRUCTURES
Authors: ARMIGLIATO A GOVONI D BALBONI R FRABBONI S BERTI M ROMANATO F DRIGO AV
Citation: A. Armigliato et al., ELECTRON AND ION-BEAM ANALYSIS OF COMPOSITION AND STRAIN IN SI1-XGEX SI HETEROSTRUCTURES, Mikrochimica acta, 114, 1994, pp. 175-185
SURFACE AND INTERFACE ANALYSIS OF TITANIUM NITRIDE DIFFUSION-BARRIERS
Authors: BONELLI M MIOTELLO A CALLIARI L ROMANATO F DRIGO AV CARNERA A
Citation: M. Bonelli et al., SURFACE AND INTERFACE ANALYSIS OF TITANIUM NITRIDE DIFFUSION-BARRIERS, Mikrochimica acta, 114, 1994, pp. 213-220
Risultati: 1-25 | 26-27