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Results: 1-9 |
Results: 9
ARSENIC DEACTIVATION ENHANCED DIFFUSION - A TIME, TEMPERATURE, AND CONCENTRATION STUDY
Authors: ROUSSEAU PM GRIFFIN PB FANG WT PLUMMER JD
Citation: Pm. Rousseau et al., ARSENIC DEACTIVATION ENHANCED DIFFUSION - A TIME, TEMPERATURE, AND CONCENTRATION STUDY, Journal of applied physics, 84(7), 1998, pp. 3593-3601
DEACTIVATION IN HEAVILY ARSENIC-DOPED SILICON
Authors: BERDING MA SHER A VANSCHILFGAARDE M ROUSSEAU PM SPICER WE
Citation: Ma. Berding et al., DEACTIVATION IN HEAVILY ARSENIC-DOPED SILICON, Applied physics letters, 72(12), 1998, pp. 1492-1494
ON THE ELECTRICAL DEACTIVATION OF ARSENIC IN SILICON
Authors: MYLER U SIMPSON PJ LAWTHER DW ROUSSEAU PM
Citation: U. Myler et al., ON THE ELECTRICAL DEACTIVATION OF ARSENIC IN SILICON, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(3), 1997, pp. 757-759
ARSENIC DEACTIVATION ENHANCED DIFFUSION AND THE REVERSE SHORT-CHANNELEFFECT
Authors: ROUSSEAU PM CROWDER SW GRIFFIN PB PLUMMER JD
Citation: Pm. Rousseau et al., ARSENIC DEACTIVATION ENHANCED DIFFUSION AND THE REVERSE SHORT-CHANNELEFFECT, IEEE electron device letters, 18(2), 1997, pp. 42-44
ENHANCED DIFFUSION BY ELECTRICAL DEACTIVATION OF ARSENIC AND ITS IMPLICATIONS FOR BIPOLAR-DEVICES
Authors: ROUSSEAU PM GRIFFIN PB KUEHNE SC PLUMMER JD
Citation: Pm. Rousseau et al., ENHANCED DIFFUSION BY ELECTRICAL DEACTIVATION OF ARSENIC AND ITS IMPLICATIONS FOR BIPOLAR-DEVICES, I.E.E.E. transactions on electron devices, 43(4), 1996, pp. 547-553
A MODEL FOR MOBILITY DEGRADATION IN HIGHLY DOPED ARSENIC LAYERS
Authors: ROUSSEAU PM GRIFFIN PB LUNING S PLUMMER JD
Citation: Pm. Rousseau et al., A MODEL FOR MOBILITY DEGRADATION IN HIGHLY DOPED ARSENIC LAYERS, I.E.E.E. transactions on electron devices, 43(11), 1996, pp. 2025-2027
EVOLUTION OF THE CRYSTALLOGRAPHIC POSITION OF AS IMPURITIES IN HEAVILY-DOPED SI CRYSTALS AS THEIR ELECTRICAL-ACTIVITY CHANGES
Authors: HERRERAGOMEZ A ROUSSEAU PM MATERLIK G KENDELEWICZ T WOICIK JC GRIFFIN PB PLUMMER J SPICER WE
Citation: A. Herreragomez et al., EVOLUTION OF THE CRYSTALLOGRAPHIC POSITION OF AS IMPURITIES IN HEAVILY-DOPED SI CRYSTALS AS THEIR ELECTRICAL-ACTIVITY CHANGES, Applied physics letters, 68(22), 1996, pp. 3090-3092
VACANCY GENERATION RESULTING FROM ELECTRICAL DEACTIVATION OF ARSENIC
Authors: LAWTHER DW MYLER U SIMPSON PJ ROUSSEAU PM GRIFFIN PB PLUMMER JD
Citation: Dw. Lawther et al., VACANCY GENERATION RESULTING FROM ELECTRICAL DEACTIVATION OF ARSENIC, Applied physics letters, 67(24), 1995, pp. 3575-3577
ELECTRICAL DEACTIVATION OF ARSENIC AS A SOURCE OF POINT-DEFECTS
Authors: ROUSSEAU PM GRIFFIN PB PLUMMER JD
Citation: Pm. Rousseau et al., ELECTRICAL DEACTIVATION OF ARSENIC AS A SOURCE OF POINT-DEFECTS, Applied physics letters, 65(5), 1994, pp. 578-580
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