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Results:
1-15
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Results: 15
Authors:
AKIMOV BA
BOGDANOV EV
BOGOYAVLENSKIY VA
RYABOVA LI
SHTANOV VI
Citation: Ba. Akimov et al., CHARACTERISTICS OF DIODE STRUCTURES BASED ON THE P-PBTE(GA)-IN CONTACT, Infrared physics & technology, 39(5), 1998, pp. 287-292
Authors:
AKIMOV BA
LVOVA NA
RYABOVA LI
Citation: Ba. Akimov et al., QUANTUM OSCILLATORY PROPERTIES OF THE SEMIMAGNETIC SEMICONDUCTOR PBTE(CR), Physical review. B, Condensed matter, 58(16), 1998, pp. 10430-10434
Authors:
AKIMOV BA
ALBUL AV
GASKOV AM
ILIN VY
RUMYANTSEVA MN
RYABOVA LI
LABEAU M
Citation: Ba. Akimov et al., ELECTRICAL-CONDUCTIVITY OF POLYCRYSTALLINE SNO2(CU) FILMS AND THEIR SENSITIVITY TO HYDROGEN-SULFIDE, Semiconductors, 31(4), 1997, pp. 335-339
Authors:
AKIMOV BA
BRANDT NB
ALBUL AV
RYABOVA LI
Citation: Ba. Akimov et al., ELECTROTHERMAL INSTABILITIES INDUCED BY A METASTABLE ELECTRONIC-STATEIN PBTE(GA), Semiconductors, 31(2), 1997, pp. 100-102
Authors:
AKIMOV BA
BOGDANOV EV
BOGOYAVLENSKII VA
RYABOVA LI
SHTANOV VI
Citation: Ba. Akimov et al., PROPERTIES OF P-PBTE (GA) BASED DIODE STRUCTURES, Semiconductors, 31(12), 1997, pp. 1237-1240
Authors:
KUDRYAVTSEVA SM
VERTEGEL AA
KALININ SV
OLEYNIKOV NN
RYABOVA LI
MESHKOV LL
NESTERENKO SN
RUMYANTSEVA MN
GASKOV AM
Citation: Sm. Kudryavtseva et al., EFFECT OF MICROSTRUCTURE ON THE STABILITY OF NANOCRYSTALLINE TIN DIOXIDE CERAMICS, Journal of materials chemistry, 7(11), 1997, pp. 2269-2272
Authors:
AKIMOV BA
LVOVA NA
RYABOVA LI
Citation: Ba. Akimov et al., PHOTOCONDUCTIVITY KINETICS IN PB1-XMNXTE(IN) SOLID-SOLUTIONS WITH VARYING COMPOSITION, Semiconductors, 30(9), 1996, pp. 861-863
Authors:
RUMYANTSEVA MN
GASKOV AM
RYABOVA LI
SENATEUR JP
CHENEVIER B
LABEAU M
Citation: Mn. Rumyantseva et al., PYROSOL SPRAYING DEPOSITION OF COPPER-DOPED AND NICKEL-DOPED TIN OXIDE-FILMS, Materials science & engineering. B, Solid-state materials for advanced technology, 41(3), 1996, pp. 333-338
Authors:
RYABOVA LI
SIBIRKO IA
ELIZAROV NI
Citation: Li. Ryabova et al., PRODUCTION OF NON-DEHYDRATING GROUTING MO RTARS, Neftanoe hozajstvo, (7), 1996, pp. 17-19
Authors:
AKIMOV BA
ALBUL AV
RYABOVA LI
Citation: Ba. Akimov et al., KINETICS OF THE PHOTOCONDUCTIVITY IN PBTE(GA), Semiconductors, 29(12), 1995, pp. 1125-1130
Authors:
SKIPETROV EP
NEKRASOVA AN
PELEKHOV DV
RYABOVA LI
SIDOROV VI
Citation: Ep. Skipetrov et al., ELECTRICAL AND PHOTOELECTRIC PROPERTIES OF PBTE(GA) BOMBARDED BY ELECTRONS, Semiconductors, 28(9), 1994, pp. 906-911
Authors:
AKIMOV BA
GASKOV AM
GLONTY VN
IVANCHIK II
PUTILIN FN
RYABOVA LI
Citation: Ba. Akimov et al., LASER-DEPOSITED PBTE(GA) FILMS, Physica status solidi. a, Applied research, 142(1), 1994, pp. 85-89
Authors:
AKIMOV BA
ALBUL AV
IVANCHIK II
RYABOVA LI
SLYNKO EI
KHOKHLOV DR
Citation: Ba. Akimov et al., INFLUENCE OF DOPING WITH GALLIUM ON THE PROPERTIES OF PB1-XGEXTE SOLID-SOLUTIONS, Semiconductors, 27(2), 1993, pp. 194-196
Authors:
AKIMOV BA
DMITRIEV AV
KHOKHLOV DR
RYABOVA LI
Citation: Ba. Akimov et al., CARRIER TRANSPORT AND NONEQUILIBRIUM PHENOMENA IN DOPED PBTE AND RELATED MATERIALS, Physica status solidi. a, Applied research, 137(1), 1993, pp. 9-55
Authors:
AKIMOV BA
RYABOVA LI
SHUMSKIY VN
PETIKOV NI
Citation: Ba. Akimov et al., AN OPERATING REGIME BASED ON SWITCHING EFFECTS FOR PHOTODETECTORS OF PB1-XSNXTE(IN) MBE FILMS, Infrared physics, 34(4), 1993, pp. 375-378
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