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Results: 1-10 |
Results: 10
Fully depleted SOICMOS technology for heterogeneous micropower, high-temperature or RF microsystems
Authors: Flandre, D Adriaensen, S Akheyar, A Crahay, A Demeus, L Delatte, P Dessard, V Iniguez, B Neve, A Katschmarskyj, B Loumaye, P Laconte, J Martinez, I Picun, G Rauly, E Renaux, C Spote, D Zitout, M Dehan, M Parvais, B Simon, P Vanhoenacker, D Raskin, JP
Citation: D. Flandre et al., Fully depleted SOICMOS technology for heterogeneous micropower, high-temperature or RF microsystems, SOL ST ELEC, 45(4), 2001, pp. 541-549
Deep-submicrometer DC-to-RF SOI MOSFET macro-model
Authors: Iniguez, B Raskin, JP Demeus, L Neve, A Vanhoenacker, D Simon, P Goffioul, M Flandre, D
Citation: B. Iniguez et al., Deep-submicrometer DC-to-RF SOI MOSFET macro-model, IEEE DEVICE, 48(9), 2001, pp. 1981-1988
A novel parametric-effect MEMS amplifier
Authors: Raskin, JP Brown, AR Khuri-Yakub, BT Rebeiz, GM
Citation: Jp. Raskin et al., A novel parametric-effect MEMS amplifier, J MICROEL S, 9(4), 2000, pp. 528-537
Accurate characterization of silicon-on-insulator MOSFETs for the design of low-voltage, low-power RF integrated circuits
Authors: Raskin, JP Gilon, R Dambrine, G Chen, J Vanhoenacker, D Colinge, JP
Citation: Jp. Raskin et al., Accurate characterization of silicon-on-insulator MOSFETs for the design of low-voltage, low-power RF integrated circuits, ANALOG IN C, 25(2), 2000, pp. 133-155
A 140-170-GHz low-noise uniplanar, subharmonic schottky receiver
Authors: Gauthier, GP Raskin, JP Rebeiz, GM
Citation: Gp. Gauthier et al., A 140-170-GHz low-noise uniplanar, subharmonic schottky receiver, IEEE MICR T, 48(8), 2000, pp. 1416-1419
Mode conversion at GCPW-to-microstrip-line transitions
Authors: Raskin, JP Gauthier, G Katehi, LP Rebeiz, GM
Citation: Jp. Raskin et al., Mode conversion at GCPW-to-microstrip-line transitions, IEEE MICR T, 48(1), 2000, pp. 158-161
W-band single-layer vertical transitions
Authors: Raskin, JP Gauthier, G Katehi, LP Rebeiz, GM
Citation: Jp. Raskin et al., W-band single-layer vertical transitions, IEEE MICR T, 48(1), 2000, pp. 161-164
Fully-depleted SOICMOS technology for low-voltage low-power mixed digital/analog/microwave circuits
Authors: Flandre, D Colinge, JP Chen, J De Ceuster, D Eggermont, JP Ferreira, L Gentinne, B Jespers, PGA Viviani, A Gillon, R Raskin, JP Vander Vorst, A Vanhoenacker-Janvier, D Silveira, F
Citation: D. Flandre et al., Fully-depleted SOICMOS technology for low-voltage low-power mixed digital/analog/microwave circuits, ANALOG IN C, 21(3), 1999, pp. 213-228
High-frequency four noise parameters of silicon-on-insulator-based technology MOSFET for the design of low-noise RF integrated circuits
Authors: Dambrine, G Raskin, JP Danneville, F Vanhoenacker-Janvier, D Colinge, JP Cappy, A
Citation: G. Dambrine et al., High-frequency four noise parameters of silicon-on-insulator-based technology MOSFET for the design of low-noise RF integrated circuits, IEEE DEVICE, 46(8), 1999, pp. 1733-1741
A 94-GHz aperture-coupled micromachined microstrip antenna
Authors: Gauthier, GP Raskin, JP Katehi, LPB Rebeiz, GM
Citation: Gp. Gauthier et al., A 94-GHz aperture-coupled micromachined microstrip antenna, IEEE ANTENN, 47(12), 1999, pp. 1761-1766
Risultati: 1-10 |