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Results:
1-21
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Results: 21
Authors:
Kaminska, E
Piotrowska, A
Barcz, A
Reginski, K
Dluzewski, P
Kozlowski, M
Dynowska, E
Citation: E. Kaminska et al., Study of Zn-related structural transformations at p-GaAs/Ni/Zn interfaces relative to the formation of an ohmic contact, MAT SC S PR, 4(1-3), 2001, pp. 289-291
Authors:
Zymierska, D
Auleytner, J
Choinski, J
Perchuc, L
Godwod, K
Domagala, J
Adamczewska, J
Paszkowicz, W
Reginski, K
Citation: D. Zymierska et al., Structural changes induced by fast nitrogen ions in GaAs single crystals, J ALLOY COM, 328(1-2), 2001, pp. 112-118
Authors:
Piwonski, T
Sajewicz, P
Kubica, JM
Zbroszczyk, M
Reginski, K
Mroziewicz, B
Bugajski, M
Citation: T. Piwonski et al., Long-wavelength strained-layer InGaAs/GaAs quantum-well lasers grown by molecular beam epitaxy, MICROW OPT, 29(2), 2001, pp. 75-77
Authors:
Bugajski, M
Reginski, K
Mroziewicz, B
Kubica, JM
Sajewicz, P
Piwonski, T
Zbroszczyk, M
Citation: M. Bugajski et al., High-performance 980-nm strained-layer InGaAs/GaAs quantum-well lasers, OPT APPL, 31(2), 2001, pp. 267-271
Authors:
Bugajski, M
Muszalski, J
Mroziewicz, B
Reginski, K
Ochalski, TJ
Citation: M. Bugajski et al., Resonant cavity enhanced photonic devices, OPT APPL, 31(2), 2001, pp. 273-288
Authors:
Ghali, M
Kossut, J
Janik, E
Reginski, K
Klopotowski, L
Citation: M. Ghali et al., Optical injection of spin-polarized carriers across a strongly mismatched heterostructure, SOL ST COMM, 119(6), 2001, pp. 371-376
Authors:
Wongmanerod, S
Sernelius, BE
Holtz, PO
Monemar, B
Mauritz, O
Reginski, K
Bugajski, M
Citation: S. Wongmanerod et al., Many-body effects in highly p-type modulation-doped GaAs/AlxGa1-xAs quantum wells, PHYS REV B, 61(4), 2000, pp. 2794-2798
Authors:
Wolkenberg, A
Przeslawski, T
Kaniewski, J
Bak-Misiuk, J
Reginski, K
Citation: A. Wolkenberg et al., Thickness dependence of the structural and electrical properties of InAs layers epitaxially grown by MBE on GaAs (001), MAT SCI E B, 77(3), 2000, pp. 250-254
Authors:
Dziuba, Z
Gorska, M
Marczewski, J
Przeslawski, T
Reginski, K
Citation: Z. Dziuba et al., Anomalous behavior of the Hall effect in III-V hetero structures, ACT PHY P A, 97(2), 2000, pp. 331-336
Authors:
Piotrowski, J
Kaniewski, J
Reginski, K
Citation: J. Piotrowski et al., Modeling and optimization of InGaAs infrared photovoltaic detectors, NUCL INST A, 439(2-3), 2000, pp. 647-650
Authors:
Wongmanerod, S
Paskov, PP
Holtz, PO
Monemar, B
Mauritz, O
Reginski, K
Bugajski, M
Citation: S. Wongmanerod et al., Magneto-optical studies of highly p-type modulation-doped GaAs/AlxGa1-xAs quantum wells, PHYS REV B, 62(23), 2000, pp. 15952-15961
Authors:
Przeslawski, T
Wolkenberg, A
Reginski, K
Kaniewski, J
Bak-Misiuk, J
Citation: T. Przeslawski et al., Growth and transport properties of relaxed epilayers of InAs on GaAs, THIN SOL FI, 367(1-2), 2000, pp. 232-234
Authors:
Reginski, K
Muszalski, J
Bugajski, M
Ochalski, T
Kubica, JM
Zbroszczyk, M
Katcki, J
Ratajczak, J
Citation: K. Reginski et al., MBE growth of planar microcavities with distributed Bragg reflectors, THIN SOL FI, 367(1-2), 2000, pp. 290-294
Authors:
Wongmanerod, S
Holtz, PO
Reginski, K
Bugaiski, M
Monemar, B
Citation: S. Wongmanerod et al., Photoluminescence studies of P-type modulation doped GaAs/AlGaAs quantum wells in the high doping regime, PHYS SCR, T79, 1999, pp. 120-122
Authors:
Klima, K
Kaniewska, M
Reginski, K
Kaniewski, J
Citation: K. Klima et al., Oval defects in the MBE grown AlGaAs/InGaAs/GaAs and InGaAs GaAs structures, CRYST RES T, 34(5-6), 1999, pp. 683-687
Authors:
Katcki, J
Ratajczak, J
Adamczewska, J
Phillipp, F
Jin-Phillipp, NY
Reginski, K
Bugajski, M
Citation: J. Katcki et al., Formation of dislocations in InGaAs/GaAs heterostructures, PHYS ST S-A, 171(1), 1999, pp. 275-282
Authors:
Klinger, D
Lefeld-Sosnowska, M
Zymierska, D
Auleytner, J
Kozankiewicz, B
Reginski, K
Citation: D. Klinger et al., Study of extended defect structure induced by pulsed laser annealing in implanted silicon crystals, PHYS ST S-A, 171(1), 1999, pp. 389-394
Authors:
Dziuba, Z
Przeslawski, T
Dybko, K
Gorska, M
Marczewski, J
Reginski, K
Citation: Z. Dziuba et al., Negative magnetoresistance and impurity band conduction in an In0.53Ga0.47As/InP heterostructure, J APPL PHYS, 85(9), 1999, pp. 6619-6624
Authors:
Wrobel, J
Jaroszynski, J
Dietl, T
Reginski, K
Bugajski, M
Citation: J. Wrobel et al., Conductance noise of submicron wires in the regime of quantum Hall effect, PHYSICA B, 258, 1998, pp. 69-73
Authors:
Wongmanerod, S
Holtz, PO
Sernelius, B
Reginski, K
Bugajski, M
Godlewski, M
Mauritz, O
Zhao, QX
Bergman, JP
Monemar, B
Citation: S. Wongmanerod et al., Optical properties of p-type modulation doped GaAs/AlGaAs quantum wells, PHYS ST S-B, 210(2), 1998, pp. 615-620
Authors:
Wrobel, J
Dietl, T
Reginski, K
Bugajski, M
Citation: J. Wrobel et al., Transport and tunneling within a compressible electron liquid in wires andrings of GaAs/AlxGa1-xAs heterostructures, PHYS REV B, 58(24), 1998, pp. 16252-16261
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1-21
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