ACNP - Italian Periodicals Catalogue

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Results: 1-25 | 26-28

Results: 1-25/28

BeCdSe: A new material for the active region in devices operating in the blue-green region of the spectrum

Authors: Nekrutkina, OV Sorokin, SV Kaigorodov, VA Sitnikova, AA Shubina, TV Toropov, AA Ivanov, SV Kop'ev, PS Reuscher, G Wagner, V Geurts, J Waag, A Landwehr, G

Citation: Ov. Nekrutkina et al., BeCdSe: A new material for the active region in devices operating in the blue-green region of the spectrum, SEMICONDUCT, 35(5), 2001, pp. 520-524

Improved degradation stability of blue-green II-VI light-emitting diodes with excluded nitrogen-doped ZnSe-based layers

Authors: Gordeev, NY Ivanov, SV Kopchatov, VI Novikov, II Shubina, TV Il'inskaya, ND Kop'ev, PS Reuscher, G Waag, A Landwehr, G

Citation: Ny. Gordeev et al., Improved degradation stability of blue-green II-VI light-emitting diodes with excluded nitrogen-doped ZnSe-based layers, SEMICONDUCT, 35(11), 2001, pp. 1340-1344

Spin manipulation using magnetic II-VI semiconductors

Authors: Waag, A Gruber, T Reuscher, G Fiederling, R Ossau, W Schmidt, G Molenkamp, LW

Citation: A. Waag et al., Spin manipulation using magnetic II-VI semiconductors, J SUPERCOND, 14(2), 2001, pp. 291-298

CdSe monolayers, embedded in BeTe: analysis of interface vibrations by Raman spectroscopy

Authors: Wagner, V Wagner, J Muck, T Reuscher, G Waag, A Geurts, J Sadchikov, N Sorokin, SV Ivanov, SV Kop'ev, PS

Citation: V. Wagner et al., CdSe monolayers, embedded in BeTe: analysis of interface vibrations by Raman spectroscopy, APPL SURF S, 175, 2001, pp. 169-174

Epitaxy and magnetotransport properties of the diluted magnetic semiconductor p-Be(1-x)MnxTe

Authors: Hansen, L Ferrand, D Richter, G Thierley, M Hock, V Schwarz, N Reuscher, G Schmidt, G Molenkamp, LW Waag, A

Citation: L. Hansen et al., Epitaxy and magnetotransport properties of the diluted magnetic semiconductor p-Be(1-x)MnxTe, APPL PHYS L, 79(19), 2001, pp. 3125-3127

Electron spin manipulation using semimagnetic resonant tunneling diodes

Authors: Gruber, T Keim, M Fiederling, R Reuscher, G Ossau, W Schmidt, G Molenkamp, LW Waag, A

Citation: T. Gruber et al., Electron spin manipulation using semimagnetic resonant tunneling diodes, APPL PHYS L, 78(8), 2001, pp. 1101-1103

BeCdSe as a ternary alloy for blue-green optoelectronic applications

Authors: Ivanov, SV Nekrutkina, OV Sorokin, SV Kaygorodov, VA Shubina, TV Toropov, AA Kop'ev, PS Reuscher, G Wagner, V Geurts, J Waag, A Landwehr, G

Citation: Sv. Ivanov et al., BeCdSe as a ternary alloy for blue-green optoelectronic applications, APPL PHYS L, 78(4), 2001, pp. 404-406

Demonstration of electrical spin injection into a semiconductor using a semimagnetic spin aligner

Authors: Schmidt, G Fiederling, R Keim, M Reuscher, G Gruber, T Ossau, W Waag, A Molenkamp, LW

Citation: G. Schmidt et al., Demonstration of electrical spin injection into a semiconductor using a semimagnetic spin aligner, SUPERLATT M, 27(5-6), 2000, pp. 297-300

Optical anisotropy of surface-emitting ZnSe/BeTe LEDs

Authors: Landwehr, G Yakovlev, DR Keim, M Reuscher, G Ossau, W Waag, A Platonov, AV Kochereshko, VP Ivchenko, EL

Citation: G. Landwehr et al., Optical anisotropy of surface-emitting ZnSe/BeTe LEDs, SUPERLATT M, 27(5-6), 2000, pp. 515-518

Kinetics of radiative recombination in strongly excited ZnSe/BeTe superlattices

Authors: Maksimov, AA Zaitsev, SV Tartakovskii, II Kulakovskii, VD Gippius, NA Yakovlev, DR Ossau, W Reuscher, G Waag, A Landwehr, G

Citation: Aa. Maksimov et al., Kinetics of radiative recombination in strongly excited ZnSe/BeTe superlattices, PHYS ST S-B, 221(1), 2000, pp. 523-527

ZnSe/BeTe type-II light emitting diodes

Authors: Reuscher, G Keim, M Lugauer, HJ Waag, A Landwehr, G

Citation: G. Reuscher et al., ZnSe/BeTe type-II light emitting diodes, PHYS ST S-A, 180(1), 2000, pp. 225-229

BeCdSe/(Be,Zn)Se quantum well as a new active region for blue-green II-VI lasers and light-emitting diodes

Authors: Ivanov, SV Toropov, AA Shubina, TV Sorokin, SV Nekrutkina, OV Kaygorodov, VA Kopev, PS Reuscher, G Keim, M Waag, A Landwehr, G

Citation: Sv. Ivanov et al., BeCdSe/(Be,Zn)Se quantum well as a new active region for blue-green II-VI lasers and light-emitting diodes, PHYS ST S-A, 180(1), 2000, pp. 275-280

MBE growth and properties of bulk BeCdSe alloys and digital (BeSe : CdSe)/ZnSe quantum wells

Authors: Ivanov, SV Toropov, AA Shubina, TV Lebedev, AV Sorokin, SV Sitnikova, AA Kop'ev, PS Reuscher, G Keim, M Bensing, F Waag, A Landwehr, G Pozina, G Bergman, JP Monemar, B

Citation: Sv. Ivanov et al., MBE growth and properties of bulk BeCdSe alloys and digital (BeSe : CdSe)/ZnSe quantum wells, J CRYST GR, 214, 2000, pp. 109-114

BeTe-ZnSe type-II heterojunctions

Authors: Waag, A Keim, M Reuscher, G Gerhard, T Platonov, AV Yakovlev, DR Molenkamp, LW Landwehr, G

Citation: A. Waag et al., BeTe-ZnSe type-II heterojunctions, J CRYST GR, 214, 2000, pp. 316-320

Electronic band structure of quaternary Be-chalcogenides, studied by ultraviolet ellipsometry and photoreflectance spectroscopy

Authors: Wagner, V Fleszar, A Geurts, J Reuscher, G Keim, M Waag, A Landwehr, G Wilmers, K Esser, N Richter, W

Citation: V. Wagner et al., Electronic band structure of quaternary Be-chalcogenides, studied by ultraviolet ellipsometry and photoreflectance spectroscopy, J CRYST GR, 214, 2000, pp. 340-344

ZnSe/BeTe type-II LEDs emitting between 640 and 515 nm

Authors: Reuscher, G Keim, M Lugauer, HJ Waag, A Landwehr, G

Citation: G. Reuscher et al., ZnSe/BeTe type-II LEDs emitting between 640 and 515 nm, J CRYST GR, 214, 2000, pp. 1071-1074

p(+)-BeTe/n(+)-ZnSe ESAKI tunnelling heterojunctions for II-VI optoelectronic devices

Authors: Reuscher, G Landwehr, G Keim, M Lugauer, HJ Fischer, F Waag, A

Citation: G. Reuscher et al., p(+)-BeTe/n(+)-ZnSe ESAKI tunnelling heterojunctions for II-VI optoelectronic devices, ELECTR LETT, 36(3), 2000, pp. 247-249

Blue light emitting diode based on p(+)-BeTe/n(+)-ZnSe ESAKI tunnelling heterojunction

Authors: Reuscher, G Landwehr, G Keim, M Lugauer, HJ Fischer, F Waag, A

Citation: G. Reuscher et al., Blue light emitting diode based on p(+)-BeTe/n(+)-ZnSe ESAKI tunnelling heterojunction, ELECTR LETT, 36(12), 2000, pp. 1056-1058

Blue-green ZnSe lasers with a new type of active region

Authors: Ivanov, SV Toropov, AA Sorokin, SV Shubina, TV Sedova, IV Kop'ev, PS Alferov, ZI Waag, A Lugauer, HJ Reuscher, G Keim, M Fischer, FF Landwehr, G

Citation: Sv. Ivanov et al., Blue-green ZnSe lasers with a new type of active region, SEMICONDUCT, 33(9), 1999, pp. 1016-1020

Photoemission study of the Na/ZnSe(100) interface

Authors: Chen, ZH Eich, D Reuscher, G Waag, A Fink, R Umbach, E

Citation: Zh. Chen et al., Photoemission study of the Na/ZnSe(100) interface, PHYS REV B, 60(12), 1999, pp. 8915-8923

Injection and detection of a spin-polarized current in a light-emitting diode

Authors: Fiederling, R Keim, M Reuscher, G Ossau, W Schmidt, G Waag, A Molenkamp, LW

Citation: R. Fiederling et al., Injection and detection of a spin-polarized current in a light-emitting diode, NATURE, 402(6763), 1999, pp. 787-790

Cathodoluminescence study of molecular beam epitaxy (MBE) grown MgZnSSe and BeMgZnSe alloy based heterostructures

Authors: Solov'ev, VA Sorokin, SV Sedova, IV Mosina, GN Ivanov, SV Lugauer, HJ Reuscher, G Keim, M Waag, A Landwehr, G

Citation: Va. Solov'Ev et al., Cathodoluminescence study of molecular beam epitaxy (MBE) grown MgZnSSe and BeMgZnSe alloy based heterostructures, J CRYST GR, 202, 1999, pp. 481-485

MBE-grown laser diodes based on beryllium containing II-VI semiconductors

Authors: Lugauer, HJ Keim, M Reuscher, G Grabs, P Lunz, U Waag, A Landwehr, G Ivanov, S Shubina, T Toropov, A Il'inskaya, N Kop'ev, P Alferov, Z

Citation: Hj. Lugauer et al., MBE-grown laser diodes based on beryllium containing II-VI semiconductors, J CRYST GR, 202, 1999, pp. 927-932

Optical characterization of MBE grown ZnSe-based QW laser heterostructures

Authors: Shubina, TV Toropov, AA Lebedev, AV Ivanov, SV Kop'ev, PS Lugauer, HJ Reuscher, G Keim, M Worschech, L Waag, A Landwehr, G

Citation: Tv. Shubina et al., Optical characterization of MBE grown ZnSe-based QW laser heterostructures, J CRYST GR, 202, 1999, pp. 946-949

High response photodiodes based on Be-chalcogenides

Authors: Siess, J Reuscher, G Grabs, P Lugauer, HJ Schallenberg, T Ehinger, M Waag, A Landwehr, G

Citation: J. Siess et al., High response photodiodes based on Be-chalcogenides, J CRYST GR, 202, 1999, pp. 965-967

Risultati: 1-25 | 26-28