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Results: 1-20 |
Results: 20
Fine structure on the green band in ZnO
Authors: Reynolds, DC Look, DC Jogai, B
Citation: Dc. Reynolds et al., Fine structure on the green band in ZnO, J APPL PHYS, 89(11), 2001, pp. 6189-6191
Evidence for shallow acceptors in GaN
Authors: Reynolds, DC Look, DC Jogai, B Molnar, RJ
Citation: Dc. Reynolds et al., Evidence for shallow acceptors in GaN, J APPL PHYS, 89(11), 2001, pp. 6272-6274
Photoluminescence of GaN grown by molecular-beam epitaxy on a freestandingGaN template
Authors: Reshchikov, MA Huang, D Yun, F He, L Morkoc, H Reynolds, DC Park, SS Lee, KY
Citation: Ma. Reshchikov et al., Photoluminescence of GaN grown by molecular-beam epitaxy on a freestandingGaN template, APPL PHYS L, 79(23), 2001, pp. 3779-3781
Polariton and free-exciton-like photoluminescence in ZnO
Authors: Reynolds, DC Look, DC Jogai, B Collins, TC
Citation: Dc. Reynolds et al., Polariton and free-exciton-like photoluminescence in ZnO, APPL PHYS L, 79(23), 2001, pp. 3794-3796
Changes in electrical characteristics associated with degradation of InGaNblue light-emitting diodes
Authors: Fang, ZQ Reynolds, DC Look, DC
Citation: Zq. Fang et al., Changes in electrical characteristics associated with degradation of InGaNblue light-emitting diodes, J ELEC MAT, 29(4), 2000, pp. 448-451
Analgesic efficacy of intranasal butorphanol (Stadol NS) in the treatment of pain after dental impaction surgery
Authors: Desjardins, PJ Norris, LH Cooper, SA Reynolds, DC
Citation: Pj. Desjardins et al., Analgesic efficacy of intranasal butorphanol (Stadol NS) in the treatment of pain after dental impaction surgery, J ORAL MAX, 58(10), 2000, pp. 19-26
Photoluminescence measurements from the two polar faces of ZnO
Authors: Sherriff, RE Reynolds, DC Look, DC Jogai, B Hoelscher, JE Collins, TC Cantwell, G Harsch, WC
Citation: Re. Sherriff et al., Photoluminescence measurements from the two polar faces of ZnO, J APPL PHYS, 88(6), 2000, pp. 3454-3457
Time-resolved photoluminescence lifetime measurements of the Gamma(5) and Gamma(6) free excitons in ZnO
Authors: Reynolds, DC Look, DC Jogai, B Hoelscher, JE Sherriff, RE Harris, MT Callahan, MJ
Citation: Dc. Reynolds et al., Time-resolved photoluminescence lifetime measurements of the Gamma(5) and Gamma(6) free excitons in ZnO, J APPL PHYS, 88(4), 2000, pp. 2152-2153
Strain variation with sample thickness in GaN grown by hydride vapor phaseepitaxy
Authors: Reynolds, DC Look, DC Jogai, B Hoelscher, JE Sherriff, RE Molnar, RJ
Citation: Dc. Reynolds et al., Strain variation with sample thickness in GaN grown by hydride vapor phaseepitaxy, J APPL PHYS, 88(3), 2000, pp. 1460-1463
Combined effects of screening and band gap renormalization on the energy of optical transitions in ZnO and GaN
Authors: Reynolds, DC Look, DC Jogai, B
Citation: Dc. Reynolds et al., Combined effects of screening and band gap renormalization on the energy of optical transitions in ZnO and GaN, J APPL PHYS, 88(10), 2000, pp. 5760-5763
Dissociation of Al2O3(0001) substrates and the roles of silicon and oxygenin n-type GaN thin solid films grown by gas-source molecular beam epitaxy
Authors: Van Nostrand, JE Solomon, J Saxler, A Xie, QH Reynolds, DC Look, DC
Citation: Je. Van Nostrand et al., Dissociation of Al2O3(0001) substrates and the roles of silicon and oxygenin n-type GaN thin solid films grown by gas-source molecular beam epitaxy, J APPL PHYS, 87(12), 2000, pp. 8766-8772
Identification of the Gamma(5) and Gamma(6) free excitons in GaN
Authors: Reynolds, DC Look, DC Jogai, B Saxler, AW Park, SS Hahn, JY
Citation: Dc. Reynolds et al., Identification of the Gamma(5) and Gamma(6) free excitons in GaN, APPL PHYS L, 77(18), 2000, pp. 2879-2881
Point defect characterization of GaN and ZnO
Authors: Look, DC Reynolds, DC Fang, ZQ Hemsky, JW Sizelove, JR Jones, RL
Citation: Dc. Look et al., Point defect characterization of GaN and ZnO, MAT SCI E B, 66(1-3), 1999, pp. 30-32
Valence-band ordering in ZnO
Authors: Reynolds, DC Look, DC Jogai, B Litton, CW Cantwell, G Harsch, WC
Citation: Dc. Reynolds et al., Valence-band ordering in ZnO, PHYS REV B, 60(4), 1999, pp. 2340-2344
Determination of defect pair orientation in ZnO
Authors: Reynolds, DC Look, DC Jogai, B Litton, CW Cantwell, G Harsch, WC
Citation: Dc. Reynolds et al., Determination of defect pair orientation in ZnO, SOL ST COMM, 109(6), 1999, pp. 419-422
Annealing studies on GaN hydride vapor phase epitaxial layers
Authors: Reynolds, DC Look, DC Wille, T Bajaj, KK Collins, TC Molnar, RJ
Citation: Dc. Reynolds et al., Annealing studies on GaN hydride vapor phase epitaxial layers, SOL ST COMM, 109(11), 1999, pp. 683-686
Optical properties of ZnO crystals containing internal strains
Authors: Reynolds, DC Look, DC Jogai, B Jones, RL Litton, CW Harsch, W Cantwell, G
Citation: Dc. Reynolds et al., Optical properties of ZnO crystals containing internal strains, J LUMINESC, 82(2), 1999, pp. 173-176
Strain splitting of the Gamma(5) and Gamma(6) free excitons in ZnO
Authors: Reynolds, DC Look, DC Jogai, B Litton, CW Collins, TC Harris, MT Callahan, MJ Bailey, JS
Citation: Dc. Reynolds et al., Strain splitting of the Gamma(5) and Gamma(6) free excitons in ZnO, J APPL PHYS, 86(10), 1999, pp. 5598-5600
Production and annealing of electron irradiation damage in ZnO
Authors: Look, DC Reynolds, DC Hemsky, JW Jones, RL Sizelove, JR
Citation: Dc. Look et al., Production and annealing of electron irradiation damage in ZnO, APPL PHYS L, 75(6), 1999, pp. 811-813
Neutral-donor-bound-exciton complexes in ZnO crystals (vol 57, pg 12 151, 1998)
Authors: Reynolds, DC Look, DC Jogai, B Litton, CW Collins, TC Harsch, W Cantwell, G
Citation: Dc. Reynolds et al., Neutral-donor-bound-exciton complexes in ZnO crystals (vol 57, pg 12 151, 1998), PHYS REV B, 58(19), 1998, pp. 13276-13276
Risultati: 1-20 |