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Results: 1-14 |
Results: 14
GaNHBT: Toward an RF device
Authors: McCarthy, LS Smorchkova, IP Xing, HL Kozodoy, P Fini, P Limb, J Pulfrey, DL Speck, JS Rodwell, MJW DenBaars, SP Mishra, UK
Citation: Ls. Mccarthy et al., GaNHBT: Toward an RF device, IEEE DEVICE, 48(3), 2001, pp. 543-551
Submicron scaling of HBTs
Authors: Rodwell, MJW Urteaga, M Mathew, T Scott, D Mensa, D Lee, Q Guthrie, J Betser, Y Martin, SC Smith, RP Jaganathan, S Krishnan, S Long, SI Pullela, R Agarwal, B Bhattacharya, U Samoska, L Dahlstrom, M
Citation: Mjw. Rodwell et al., Submicron scaling of HBTs, IEEE DEVICE, 48(11), 2001, pp. 2606-2624
2-bit adder: carry and sum logic circuits at 19 GHz clock frequency in InAlAs/InGaAs HBT technology
Authors: Mathew, T Jaganathan, S Scott, D Krishnan, S Wei, Y Urteaga, M Rodwell, MJW Long, S
Citation: T. Mathew et al., 2-bit adder: carry and sum logic circuits at 19 GHz clock frequency in InAlAs/InGaAs HBT technology, ELECTR LETT, 37(19), 2001, pp. 1156-1157
75 GHz ECL static frequency divider using InAlAs/InGaAs HBTs
Authors: Mathew, T Kim, HJ Scott, D Jaganathan, S Krishnan, S Wei, Y Urteaga, M Long, S Rodwell, MJW
Citation: T. Mathew et al., 75 GHz ECL static frequency divider using InAlAs/InGaAs HBTs, ELECTR LETT, 37(11), 2001, pp. 667-668
Effect of threading dislocations on AlGaN/GaN heterojunction bipolar transistors
Authors: McCarthy, L Smorchkova, I Xing, H Fini, P Keller, S Speck, J DenBaars, SP Rodwell, MJW Mishra, UK
Citation: L. Mccarthy et al., Effect of threading dislocations on AlGaN/GaN heterojunction bipolar transistors, APPL PHYS L, 78(15), 2001, pp. 2235-2237
Broadband GaAs MESFET and GaNHEMT resistive feedback power amplifiers
Authors: Krishnamurthy, K Vetury, R Keller, S Mishra, U Rodwell, MJW Long, SI
Citation: K. Krishnamurthy et al., Broadband GaAs MESFET and GaNHEMT resistive feedback power amplifiers, IEEE J SOLI, 35(9), 2000, pp. 1285-1292
Broadband lumped HBT amplifiers
Authors: Krishnan, S Mensa, D Guthrie, J Jaganathan, S Mathew, T Girish, R Wei, Y Rodwell, MJW
Citation: S. Krishnan et al., Broadband lumped HBT amplifiers, ELECTR LETT, 36(5), 2000, pp. 466-467
Integrated directional coupler for 90 and 180 GHz
Authors: Wohlgemuth, O Krems, T Reuter, R Rodwell, MJW Haydl, W Schlechtweg, M
Citation: O. Wohlgemuth et al., Integrated directional coupler for 90 and 180 GHz, IEEE MICR G, 9(8), 1999, pp. 308-310
Submicron transferred-substrate heterojunction bipolar transistors
Authors: Lee, Q Martin, SC Mensa, D Smith, RP Guthrie, J Rodwell, MJW
Citation: Q. Lee et al., Submicron transferred-substrate heterojunction bipolar transistors, IEEE ELEC D, 20(8), 1999, pp. 396-398
AlGaN GaN heterojunction bipolar transistor
Authors: McCarthy, LS Kozodoy, P Rodwell, MJW DenBaars, SP Mishra, UK
Citation: Ls. Mccarthy et al., AlGaN GaN heterojunction bipolar transistor, IEEE ELEC D, 20(6), 1999, pp. 277-279
Active probes for network analysis within 70-230 GHz
Authors: Wohlgemuth, O Rodwell, MJW Reuter, R Braunstein, J Schlechtweg, M
Citation: O. Wohlgemuth et al., Active probes for network analysis within 70-230 GHz, IEEE MICR T, 47(12), 1999, pp. 2591-2598
Transferred-substrate HBTs with 254GHz f(tau)
Authors: Mensa, D Lee, Q Guthrie, J Jaganathan, S Rodwell, MJW
Citation: D. Mensa et al., Transferred-substrate HBTs with 254GHz f(tau), ELECTR LETT, 35(7), 1999, pp. 605-606
80-GHz distributed amplifiers with transferred-substrate heterojunction bipolar transistors
Authors: Agarwal, B Lee, Q Mensa, D Pullela, R Guthrie, J Rodwell, MJW
Citation: B. Agarwal et al., 80-GHz distributed amplifiers with transferred-substrate heterojunction bipolar transistors, IEEE MICR T, 46(12), 1998, pp. 2302-2307
112-GHz, 157-GHz, and 180-GHz InP HEMT traveling-wave amplifiers
Authors: Agarwal, B Schmitz, AE Brown, JJ Matloubian, M Case, MG Le, M Lui, M Rodwell, MJW
Citation: B. Agarwal et al., 112-GHz, 157-GHz, and 180-GHz InP HEMT traveling-wave amplifiers, IEEE MICR T, 46(12), 1998, pp. 2553-2559
Risultati: 1-14 |