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Results: 1-14 |

Results: 14

Monte Carlo simulation of electron transport in the III-nitride wurtzite phase materials system: Binaries and ternaries

Authors: Farahmand, M Garetto, C Bellotti, E Brennan, KF Goano, M Ghillino, E Ghione, G Albrecht, JD Ruden, PP

Citation: M. Farahmand et al., Monte Carlo simulation of electron transport in the III-nitride wurtzite phase materials system: Binaries and ternaries, IEEE DEVICE, 48(3), 2001, pp. 535-542

Hydrostatic-pressure dependence of the photoconductivity of single-crystalpentacene and tetracene

Authors: Rang, Z Haraldsson, A Kim, DM Ruden, PP Nathan, MI Chesterfield, RJ Frisbie, CD

Citation: Z. Rang et al., Hydrostatic-pressure dependence of the photoconductivity of single-crystalpentacene and tetracene, APPL PHYS L, 79(17), 2001, pp. 2731-2733

New materials-theory-based model for output characteristics of AlGaN/GaN heterostructure field effect transistors

Authors: Albrecht, JD Ruden, PP Ancona, MG

Citation: Jd. Albrecht et al., New materials-theory-based model for output characteristics of AlGaN/GaN heterostructure field effect transistors, MRS I J N S, 5, 2000, pp. NIL_550-NIL_555

Materials theory based modeling of wide band gap semiconductors: from basic properties to devices

Authors: Brennan, KF Bellotti, E Farahmand, M Haralson, J Ruden, PP Albrecht, JD Sutandi, A

Citation: Kf. Brennan et al., Materials theory based modeling of wide band gap semiconductors: from basic properties to devices, SOL ST ELEC, 44(2), 2000, pp. 195-204

Modeling of band-to-band tunneling transitions during drift in Monte Carlotransport simulations

Authors: Ruden, PP Bellotti, E Nilsson, HE Brennan, KF

Citation: Pp. Ruden et al., Modeling of band-to-band tunneling transitions during drift in Monte Carlotransport simulations, J APPL PHYS, 88(3), 2000, pp. 1488-1493

AlGaN/GaN heterojunction bipolar transistor structures-design considerations

Authors: Zhang, YM Cai, C Ruden, PP

Citation: Ym. Zhang et al., AlGaN/GaN heterojunction bipolar transistor structures-design considerations, J APPL PHYS, 88(2), 2000, pp. 1067-1072

Monte Carlo calculation of hole initiated impact ionization in 4H phase SiC

Authors: Bellotti, E Nilsson, HE Brennan, KF Ruden, PP Trew, R

Citation: E. Bellotti et al., Monte Carlo calculation of hole initiated impact ionization in 4H phase SiC, J APPL PHYS, 87(8), 2000, pp. 3864-3871

AlGaN/GaN heterostructure field-effect transistor model including thermal effects

Authors: Albrecht, JD Ruden, PP Binari, SC Ancona, MG

Citation: Jd. Albrecht et al., AlGaN/GaN heterostructure field-effect transistor model including thermal effects, IEEE DEVICE, 47(11), 2000, pp. 2031-2036

Monte Carlo simulation of noncubic symmetry semiconducting materials and devices

Authors: Brennan, KF Bellotti, E Farahmand, M Nilsson, HE Ruden, PP Zhang, YM

Citation: Kf. Brennan et al., Monte Carlo simulation of noncubic symmetry semiconducting materials and devices, IEEE DEVICE, 47(10), 2000, pp. 1882-1890

High field electron transport properties of bulk ZnO

Authors: Albrecht, JD Ruden, PP Limpijumnong, S Lambrecht, WRL Brennan, KF

Citation: Jd. Albrecht et al., High field electron transport properties of bulk ZnO, J APPL PHYS, 86(12), 1999, pp. 6864-6867

Ensemble Monte Carlo calculation of hole transport in bulk 3C-SiC

Authors: Bellotti, E Nilsson, HE Brennan, KF Ruden, PP

Citation: E. Bellotti et al., Ensemble Monte Carlo calculation of hole transport in bulk 3C-SiC, J APPL PHYS, 85(6), 1999, pp. 3211-3217

Ensemble Monte Carlo study of electron transport in wurtzite InN

Authors: Bellotti, E Doshi, BK Brennan, KF Albrecht, JD Ruden, PP

Citation: E. Bellotti et al., Ensemble Monte Carlo study of electron transport in wurtzite InN, J APPL PHYS, 85(2), 1999, pp. 916-923

A solar blind, hybrid III-nitride/silicon, ultraviolet avalanche photodiode

Authors: Ruden, PP Krishnankutty, S

Citation: Pp. Ruden et S. Krishnankutty, A solar blind, hybrid III-nitride/silicon, ultraviolet avalanche photodiode, IEEE DEVICE, 46(12), 1999, pp. 2348-2350

1.3-mu m polarization-insensitive optical amplifier structure based on coupled quantum wells

Authors: Zhang, YM Ruden, PP

Citation: Ym. Zhang et Pp. Ruden, 1.3-mu m polarization-insensitive optical amplifier structure based on coupled quantum wells, IEEE J Q EL, 35(10), 1999, pp. 1509-1514

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