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Results: 1-9 |
Results: 9
DIFFUSION BARRIER PERFORMANCE OF THIN CR FILMS IN THE CU CR/SI STRUCTURE/
Authors: EZER Y HARKONEN J SOKOLOV V SAARILAHTI J KAITILA J KUIVALAINEN P
Citation: Y. Ezer et al., DIFFUSION BARRIER PERFORMANCE OF THIN CR FILMS IN THE CU CR/SI STRUCTURE/, Materials research bulletin, 33(9), 1998, pp. 1331-1337
RUTHERFORD BACKSCATTERING AND KINETICS STUDY OF THE PHOTOINDUCED SOLID-STATE CHEMICAL-REACTION BETWEEN SILVER AND AMORPHOUS AS33S67 LAYERS
Authors: WAGNER T PERINA V VLCEK M FRUMAR M RAUHALA E SAARILAHTI J EWEN PJS
Citation: T. Wagner et al., RUTHERFORD BACKSCATTERING AND KINETICS STUDY OF THE PHOTOINDUCED SOLID-STATE CHEMICAL-REACTION BETWEEN SILVER AND AMORPHOUS AS33S67 LAYERS, Journal of non-crystalline solids, 212(2-3), 1997, pp. 157-165
ION-BACKSCATTERING ANALYSIS OF ELECTRONIC MATERIALS
Authors: SAARILAHTI J
Citation: J. Saarilahti, ION-BACKSCATTERING ANALYSIS OF ELECTRONIC MATERIALS, Acta polytechnica Scandinavica. Ph, Applied physics series, (199), 1995, pp. 2-48
STRUCTURAL-PROPERTIES OF GE-IMPLANTED SI1-XGEX LAYERS
Authors: XIA Z RISTOLAINEN EO SAARILAHTI J GRAHN K MOLARIUS J
Citation: Z. Xia et al., STRUCTURAL-PROPERTIES OF GE-IMPLANTED SI1-XGEX LAYERS, Vacuum, 46(8-10), 1995, pp. 1071-1075
GROWTH OF SILICON-CARBIDE ON (100) SILICON SUBSTRATES BY MOLECULAR-BEAM EPITAXY
Authors: AIRAKSINEN VM KAITILA J NIEMI H LAHTINEN J SAARILAHTI J
Citation: Vm. Airaksinen et al., GROWTH OF SILICON-CARBIDE ON (100) SILICON SUBSTRATES BY MOLECULAR-BEAM EPITAXY, Physica scripta. T, 54, 1994, pp. 205-207
RBS CHANNELING SPECTROSCOPY OF GE IMPLANTED EPITAXIAL SI1-XGEX LAYERS
Authors: SAARILAHTI J XIA Z RONKAINEN H KUIVALAINEN P SUNI I
Citation: J. Saarilahti et al., RBS CHANNELING SPECTROSCOPY OF GE IMPLANTED EPITAXIAL SI1-XGEX LAYERS, Physica scripta. T, 54, 1994, pp. 212-215
AMORPHIZATION OF SILICON BY HIGH-DOSE GERMANIUM ION-IMPLANTATION WITHNO EXTERNAL COOLING MECHANISM
Authors: XIA Z SAARILAHTI J RISTOLAINEN E ERANEN S RONKAINEN H KUIVALAINEN P PAINE D TUOMI T
Citation: Z. Xia et al., AMORPHIZATION OF SILICON BY HIGH-DOSE GERMANIUM ION-IMPLANTATION WITHNO EXTERNAL COOLING MECHANISM, Applied surface science, 78(3), 1994, pp. 321-330
RAPID THERMAL ANNEALING OF SI1-XGEX LAYERS FORMED BY GERMANIUM ION-IMPLANTATION
Authors: XIA Z SAARILAHTI J RONKAINEN H ERANEN S SUNI I MOLARIUS J KUIVALAINEN P RISTOLAINEN E TUOMI T
Citation: Z. Xia et al., RAPID THERMAL ANNEALING OF SI1-XGEX LAYERS FORMED BY GERMANIUM ION-IMPLANTATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 88(3), 1994, pp. 247-254
COMPARISON OF ANODIZATION SPECTROSCOPY WITH SIMS AND RBS MEASUREMENTSFOR THE CHARACTERIZATION OF NB AL-ALOX/NB JOSEPHSON-JUNCTION STRUCTURES/
Authors: SAARILAHTI J LIKONEN J GRONBERG L
Citation: J. Saarilahti et al., COMPARISON OF ANODIZATION SPECTROSCOPY WITH SIMS AND RBS MEASUREMENTSFOR THE CHARACTERIZATION OF NB AL-ALOX/NB JOSEPHSON-JUNCTION STRUCTURES/, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 79(1-4), 1993, pp. 474-477
Risultati: 1-9 |