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Results: 1-7 |
Results: 7
LCAO CALCULATIONS OF SULFUR INTERLAYERS ON GE(001) AND SI(001)-K INTERFACES
Authors: WHITTLE R SAIZPARDO R GARCIAVIDAL FJ FLORES F
Citation: R. Whittle et al., LCAO CALCULATIONS OF SULFUR INTERLAYERS ON GE(001) AND SI(001)-K INTERFACES, Applied surface science, 123, 1998, pp. 560-566
SCHOTTKY-BARRIER FORMATION FOR PASSIVATED SEMICONDUCTOR SURFACES
Authors: SAIZPARDO R RINCON R FLORES F
Citation: R. Saizpardo et al., SCHOTTKY-BARRIER FORMATION FOR PASSIVATED SEMICONDUCTOR SURFACES, Applied surface science, 92, 1996, pp. 362-366
SCHOTTKY-BARRIER FORMATION AT PASSIVATED SURFACES - COVALENT AND IONIC SEMICONDUCTORS
Authors: SAIZPARDO R RINCON R DEANDRES PL FLORES F
Citation: R. Saizpardo et al., SCHOTTKY-BARRIER FORMATION AT PASSIVATED SURFACES - COVALENT AND IONIC SEMICONDUCTORS, Applied surface science, 104, 1996, pp. 183-187
THEORY OF THE SCANNING TUNNELING MICROSCOPE - XE ON NI AND AL
Authors: MINGO N JURCZYSZYN L GARCIAVIDAL FJ SAIZPARDO R DEANDRES PL FLORES F WU SY MORE W
Citation: N. Mingo et al., THEORY OF THE SCANNING TUNNELING MICROSCOPE - XE ON NI AND AL, Physical review. B, Condensed matter, 54(3), 1996, pp. 2225-2235
SCHOTTKY-BARRIER FORMATION FOR NONIDEAL INTERFACES - AS-RICH GAAS(110) METAL JUNCTIONS
Authors: SAIZPARDO R RINCON R PEREZ R FLORES F
Citation: R. Saizpardo et al., SCHOTTKY-BARRIER FORMATION FOR NONIDEAL INTERFACES - AS-RICH GAAS(110) METAL JUNCTIONS, Surface science, 309, 1994, pp. 309-314
ELECTRON-STATES AT SEMICONDUCTOR INTERFACES - THE INTRINSIC AND EXTRINSIC CHARGE NEUTRALITY LEVELS
Authors: FLORES F PEREZ R RINCON R SAIZPARDO R
Citation: F. Flores et al., ELECTRON-STATES AT SEMICONDUCTOR INTERFACES - THE INTRINSIC AND EXTRINSIC CHARGE NEUTRALITY LEVELS, Philosophical transactions-Royal Society of London. Physical sciences and engineering, 344(1673), 1993, pp. 567-577
THE INTERACTION OF ATOMS WITH SEMICONDUCTOR SURFACES - THE CASE OF SBON GAAS (110)
Authors: FLORES F SAIZPARDO R RINCON R ORTEGA J PEREZ R GARCIAVIDAL FJ
Citation: F. Flores et al., THE INTERACTION OF ATOMS WITH SEMICONDUCTOR SURFACES - THE CASE OF SBON GAAS (110), Journal of physics. Condensed matter, 5, 1993, pp. 41-50
Risultati: 1-7 |