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Results: 1-12 |
Results: 12
SUBPLANTATION EFFECT IN MAGNETRON-SPUTTERED SUPERHARD BORON-CARBIDE THIN-FILMS
Authors: ULRICH S EHRHARDT H SCHWAN J SAMLENSKI R BRENN R
Citation: S. Ulrich et al., SUBPLANTATION EFFECT IN MAGNETRON-SPUTTERED SUPERHARD BORON-CARBIDE THIN-FILMS, DIAMOND AND RELATED MATERIALS, 7(6), 1998, pp. 835-838
LIFT-OFF TECHNIQUE OF HOMOEPITAXIAL CVD DIAMOND FILMS BY DEEP IMPLANTATION AND SELECTIVE ETCHING
Authors: LOCHER R BEHR D GULLICH H HERRES N KOIDL P SAMLENSKI R BRENN R
Citation: R. Locher et al., LIFT-OFF TECHNIQUE OF HOMOEPITAXIAL CVD DIAMOND FILMS BY DEEP IMPLANTATION AND SELECTIVE ETCHING, DIAMOND AND RELATED MATERIALS, 6(5-7), 1997, pp. 654-657
LIFTOFF-TECHNIQUE OF SINGLE-CRYSTAL DIAMOND PLATES - STUDY OF THE LATTICE DAMAGE OF THE IMPLANTED SUBSTRATES AND THE CRYSTALLINE QUALITY OFTHE HOMOEPITAXIAL FILMS BY ION CHANNELING
Authors: SAMLENSKI R GARTNER H LOCHER R KOIDL P BRENN R
Citation: R. Samlenski et al., LIFTOFF-TECHNIQUE OF SINGLE-CRYSTAL DIAMOND PLATES - STUDY OF THE LATTICE DAMAGE OF THE IMPLANTED SUBSTRATES AND THE CRYSTALLINE QUALITY OFTHE HOMOEPITAXIAL FILMS BY ION CHANNELING, DIAMOND AND RELATED MATERIALS, 6(1), 1997, pp. 149-152
CHARACTERIZATION AND LATTICE LOCATION OF NITROGEN AND BORON IN HOMOEPITAXIAL CVD DIAMOND
Authors: SAMLENSKI R HAUG C BRENN R WILD C LOCHER R KOIDL P
Citation: R. Samlenski et al., CHARACTERIZATION AND LATTICE LOCATION OF NITROGEN AND BORON IN HOMOEPITAXIAL CVD DIAMOND, DIAMOND AND RELATED MATERIALS, 5(9), 1996, pp. 947-951
TEMPERATURE-DEPENDENCE OF THE FORMATION OF HIGHLY TETRAHEDRAL A-C-H
Authors: SATTEL S GIESSEN T ROTH H SCHEIB M SAMLENSKI R BRENN R EHRHARDT H ROBERTSON J
Citation: S. Sattel et al., TEMPERATURE-DEPENDENCE OF THE FORMATION OF HIGHLY TETRAHEDRAL A-C-H, DIAMOND AND RELATED MATERIALS, 5(3-5), 1996, pp. 425-428
TETRAHEDRAL AMORPHOUS-CARBON FILMS PREPARED BY MAGNETRON SPUTTERING AND DC ION PLATING
Authors: SCHWAN J ULRICH S ROTH H EHRHARDT H SILVA SRP ROBERTSON J SAMLENSKI R BRENN R
Citation: J. Schwan et al., TETRAHEDRAL AMORPHOUS-CARBON FILMS PREPARED BY MAGNETRON SPUTTERING AND DC ION PLATING, Journal of applied physics, 79(3), 1996, pp. 1416-1422
DEPOSITION OF TA-C-H FILMS BY RF PLASMA DISCHARGES
Authors: SCHWAN J ULRICH S JUNG K EHRHARDT H SAMLENSKI R
Citation: J. Schwan et al., DEPOSITION OF TA-C-H FILMS BY RF PLASMA DISCHARGES, DIAMOND AND RELATED MATERIALS, 4(4), 1995, pp. 304-308
CHARACTERIZATION OF HOMOEPITAXIAL DIAMOND FILMS BY NUCLEAR METHODS
Authors: SAMLENSKI R SCHMALZLIN J BRENN R WILD C MULLERSEBERT W KOIDL P
Citation: R. Samlenski et al., CHARACTERIZATION OF HOMOEPITAXIAL DIAMOND FILMS BY NUCLEAR METHODS, DIAMOND AND RELATED MATERIALS, 4(4), 1995, pp. 503-507
INCORPORATION OF NITROGEN IN CHEMICAL-VAPOR-DEPOSITION DIAMOND
Authors: SAMLENSKI R HAUG C BRENN R WILD C LOCHER R KOIDL P
Citation: R. Samlenski et al., INCORPORATION OF NITROGEN IN CHEMICAL-VAPOR-DEPOSITION DIAMOND, Applied physics letters, 67(19), 1995, pp. 2798-2800
CHARACTERIZATION OF STRUCTURE AND DEFECTS IN TEXTURED DIAMOND FILMS BY ION CHANNELING
Authors: SAMLENSKI R FLEMIG G BRENN R WILD C MULLERSEBERT W KOIDL P
Citation: R. Samlenski et al., CHARACTERIZATION OF STRUCTURE AND DEFECTS IN TEXTURED DIAMOND FILMS BY ION CHANNELING, DIAMOND AND RELATED MATERIALS, 3(8), 1994, pp. 1091-1096
QUANTITATIVE TEXTURE AND DEFECT ANALYSIS OF POLYCRYSTALLINE DIAMOND FILMS BY ION CHANNELING
Authors: SAMLENSKI R BRENN R
Citation: R. Samlenski et R. Brenn, QUANTITATIVE TEXTURE AND DEFECT ANALYSIS OF POLYCRYSTALLINE DIAMOND FILMS BY ION CHANNELING, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 86(3-4), 1994, pp. 339-344
ION CHANNELING IN TEXTURED POLYCRYSTALLINE DIAMOND FILMS
Authors: SAMLENSKI R FLEMIG G BRENN R WILD C MULLERSEBERT W KOIDL P
Citation: R. Samlenski et al., ION CHANNELING IN TEXTURED POLYCRYSTALLINE DIAMOND FILMS, Journal of applied physics, 74(3), 1993, pp. 2134-2136
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