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Results: 1-25 | 26-29
Results: 1-25/29
DIRECT DETERMINATION OF THE PIEZOELECTRIC FIELD IN (111) STRAINED INGAAS GAAS MULTIPLE-QUANTUM-WELL P-I-N STRUCTURES BY PHOTOREFLECTANCE/
Authors: DICKEY SA MAJERFELD A SANCHEZROJAS JL SACEDON A MUNOZ E SANZHERVAS A AGUILAR M KIM BW
Citation: Sa. Dickey et al., DIRECT DETERMINATION OF THE PIEZOELECTRIC FIELD IN (111) STRAINED INGAAS GAAS MULTIPLE-QUANTUM-WELL P-I-N STRUCTURES BY PHOTOREFLECTANCE/, Microelectronic engineering, 43-4, 1998, pp. 171-177
HIGH-RESOLUTION X-RAY-DIFFRACTION CHARACTERIZATION OF PIEZOELECTRIC INGAAS GAAS MULTIQUANTUM WELLS AND SUPERLATTICES ON (111)B GAAS/
Authors: SANZHERVAS A LOPEZ M SACEDON A SANCHEZROJAS JL AGUILAR M LLORENTE C LORENZO R ABRIL EJ CALLEJA E MUNOZ E
Citation: A. Sanzhervas et al., HIGH-RESOLUTION X-RAY-DIFFRACTION CHARACTERIZATION OF PIEZOELECTRIC INGAAS GAAS MULTIQUANTUM WELLS AND SUPERLATTICES ON (111)B GAAS/, Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics, 19(2-4), 1997, pp. 329-337
YELLOW LUMINESCENCE AND RELATED DEEP STATES IN UNDOPED GAN
Authors: CALLEJA E SANCHEZ FJ BASAK D SANCHEZGARCIA MA MUNOZ E IZPURA I CALLE F TIJERO JMG SANCHEZROJAS JL BEAUMONT B LORENZINI P GIBART P
Citation: E. Calleja et al., YELLOW LUMINESCENCE AND RELATED DEEP STATES IN UNDOPED GAN, Physical review. B, Condensed matter, 55(7), 1997, pp. 4689-4694
MEMORY EFFECTS ON PIEZOELECTRIC INGAAS GAAS MQW PIN DIODES/
Authors: VALTUENA JF IZPURA I SANCHEZROJAS JL MUNOZ E KHOO EA DAVID JPR WOODHEAD J GREY R REES GJ
Citation: Jf. Valtuena et al., MEMORY EFFECTS ON PIEZOELECTRIC INGAAS GAAS MQW PIN DIODES/, Microelectronics, 28(8-10), 1997, pp. 757-765
CHARGE ACCUMULATION EFFECTS IN INGAAS GAAS [111]-ORIENTED PIEZOELECTRIC MULTIPLE-QUANTUM WELLS/
Authors: SANCHEZROJAS JL SACEDON A VALTUENA JF SANZHERVAS A IZPURA I CALLEJA E MUNOZ E ABRIL EJ AGUILAR M
Citation: Jl. Sanchezrojas et al., CHARGE ACCUMULATION EFFECTS IN INGAAS GAAS [111]-ORIENTED PIEZOELECTRIC MULTIPLE-QUANTUM WELLS/, Microelectronics, 28(8-10), 1997, pp. 767-775
APPLICATION OF HIGH-RESOLUTION X-RAY-DIFFRACTOMETRY TO THE STRUCTURALSTUDY OF EPITAXIAL MULTILAYERS ON NOVEL INDEX SURFACES
Authors: SANZHERVAS A GARRIDO M AGUILAR M SACEDON A SANCHEZROJAS JL CALLEJA E MUNOZ E VILLAR C ABRIL EJ LOPEZ M
Citation: A. Sanzhervas et al., APPLICATION OF HIGH-RESOLUTION X-RAY-DIFFRACTOMETRY TO THE STRUCTURALSTUDY OF EPITAXIAL MULTILAYERS ON NOVEL INDEX SURFACES, Microelectronics, 28(8-10), 1997, pp. 777-784
OBSERVATION OF NON-TRIGONAL LATTICE DISTORTION IN PSEUDOMORPHIC INGAAS GAAS SUPERLATTICES GROWN ON MISORIENTED (111)B GAAS/
Authors: SANZHERVAS A AGUILAR M SANCHEZROJAS JL SACEDON A CALLEJA E MUNOZ E VILLAR C ABRIL EJ LOPEZ M
Citation: A. Sanzhervas et al., OBSERVATION OF NON-TRIGONAL LATTICE DISTORTION IN PSEUDOMORPHIC INGAAS GAAS SUPERLATTICES GROWN ON MISORIENTED (111)B GAAS/, Journal of applied physics, 82(7), 1997, pp. 3297-3305
PHOTOINHIBITION OF THE QUANTUM-CONFINED STARK-EFFECT IN PIEZOELECTRICMULTIPLE-QUANTUM WELLS
Authors: SANCHEZROJAS JL SACEDON A CALLEJA E MUNOZ E SANZHERVAS A DEBENITO G LOPEZ M
Citation: Jl. Sanchezrojas et al., PHOTOINHIBITION OF THE QUANTUM-CONFINED STARK-EFFECT IN PIEZOELECTRICMULTIPLE-QUANTUM WELLS, Physical review. B, Condensed matter, 53(23), 1996, pp. 15469-15472
TRANSIENT NEGATIVE PHOTOCURRENT AND OUT-OF-WELL DIPOLE KINETICS IN NOVEL PIEZOELECTRIC INGAAS GAAS MQW PIN DIODES/
Authors: IZPURA I VALTUENA JF SANCHEZROJAS JL SACEDON A CALLEJA E MUNOZ E
Citation: I. Izpura et al., TRANSIENT NEGATIVE PHOTOCURRENT AND OUT-OF-WELL DIPOLE KINETICS IN NOVEL PIEZOELECTRIC INGAAS GAAS MQW PIN DIODES/, Solid-state electronics, 40(1-8), 1996, pp. 463-467
PROBING RESONANT-TUNNELING AND CHARGE ACCUMULATION VIA CAPACITANCE MEASUREMENTS IN [111]-ORIENTED INGAAS GAAS MQW AND SUPERLATTICES/
Authors: SANCHEZROJAS JL SACEDON A SANZHERVAS A CALLEJA E MUNOZ E ABRIL EJ
Citation: Jl. Sanchezrojas et al., PROBING RESONANT-TUNNELING AND CHARGE ACCUMULATION VIA CAPACITANCE MEASUREMENTS IN [111]-ORIENTED INGAAS GAAS MQW AND SUPERLATTICES/, Solid-state electronics, 40(1-8), 1996, pp. 591-595
PER-CARRIER NONLINEAR-OPTICAL RESPONSE OF [111]-ORIENTED PIEZOELECTRIC INGAAS GAAS MULTIPLE-QUANTUM WELLS/
Authors: HUANG XR CARTWRIGHT AN HARKEN DR MCCALLUM DS SMIRL AL SANCHEZROJAS JL SACEDON A CALLEJA E MUNOZ E
Citation: Xr. Huang et al., PER-CARRIER NONLINEAR-OPTICAL RESPONSE OF [111]-ORIENTED PIEZOELECTRIC INGAAS GAAS MULTIPLE-QUANTUM WELLS/, Journal of applied physics, 79(1), 1996, pp. 417-423
HIGH-RESOLUTION X-RAY-DIFFRACTION STUDY OF PIEZOELECTRIC INGAAS GAAS MULTIQUANTUM-WELL P-I-N PHOTODIODES GROWN ON (111)B GAAS/
Authors: SANZHERVAS A AGUILAR M SANCHEZROJAS JL SACEDON A CALLEJA E MUNOZ E ABRIL EJ LOPEZ M
Citation: A. Sanzhervas et al., HIGH-RESOLUTION X-RAY-DIFFRACTION STUDY OF PIEZOELECTRIC INGAAS GAAS MULTIQUANTUM-WELL P-I-N PHOTODIODES GROWN ON (111)B GAAS/, Applied physics letters, 69(11), 1996, pp. 1574-1576
DESIGN AND CHARACTERIZATION OF (111)B INGAAS GAAS PIEZOELECTRIC SUPERLATTICES/
Authors: SANCHEZROJAS JL SACEDON A SANZHERVAS A CALLEJA E MUNOZ E ABRIL EJ AGUILAR M LOPEZ M
Citation: Jl. Sanchezrojas et al., DESIGN AND CHARACTERIZATION OF (111)B INGAAS GAAS PIEZOELECTRIC SUPERLATTICES/, Semiconductor science and technology, 10(8), 1995, pp. 1173-1176
DISPLACEMENT PHOTOCURRENTS AND SCREENING EFFECTS IN NOVEL PIEZOELECTRIC INGAAS GAAS MULTIPLE-QUANTUM-WELL P-I-N-DIODES/
Authors: VALTUENA JF IZPURA I SANCHEZROJAS JL SACEDON A CALLEJA E MUNOZ E
Citation: Jf. Valtuena et al., DISPLACEMENT PHOTOCURRENTS AND SCREENING EFFECTS IN NOVEL PIEZOELECTRIC INGAAS GAAS MULTIPLE-QUANTUM-WELL P-I-N-DIODES/, Semiconductor science and technology, 10(11), 1995, pp. 1528-1533
IN-WELL SCREENING NONLINEARITIES IN PIEZOELECTRIC MULTIPLE-QUANTUM WELLS
Authors: HUANG XR HARKEN DR CARTWRIGHT AN SMIRL AL SANCHEZROJAS JL SACEDON A CALLEJA E MUNOZ E
Citation: Xr. Huang et al., IN-WELL SCREENING NONLINEARITIES IN PIEZOELECTRIC MULTIPLE-QUANTUM WELLS, Applied physics letters, 67(7), 1995, pp. 950-952
CARRIER AND SCREENING DYNAMICS IN STRAINED [111]-ORIENTED MULTIPLE-QUANTUM WELLS
Authors: HARKEN DR HUANG XR MCCALLUM DS SMIRL AL SANCHEZROJAS JL SACEDON A CALLEJA E MUNOZ E
Citation: Dr. Harken et al., CARRIER AND SCREENING DYNAMICS IN STRAINED [111]-ORIENTED MULTIPLE-QUANTUM WELLS, Applied physics letters, 66(7), 1995, pp. 857-859
SEQUENTIAL TUNNELING IN [100]-ORIENTED AND [111]-ORIENTED INGAAS GAASMULTIQUANTUM WELLS BY PHOTOCAPACITANCE/
Authors: SANCHEZROJAS JL SACEDON A CALLEJA E MUNOZ E
Citation: Jl. Sanchezrojas et al., SEQUENTIAL TUNNELING IN [100]-ORIENTED AND [111]-ORIENTED INGAAS GAASMULTIQUANTUM WELLS BY PHOTOCAPACITANCE/, Applied physics letters, 66(17), 1995, pp. 2223-2225
STRAINED PIEZOELECTRIC [111]-MULTIPLE QUANTUM-WELLS - CLAMPED OR FREE
Authors: HUANG XR MCCALLUM DS HARKEN DR CARTWRIGHT AN SMIRL AL SACEDON A SANCHEZROJAS JL CALLEJA E MUNOZ E
Citation: Xr. Huang et al., STRAINED PIEZOELECTRIC [111]-MULTIPLE QUANTUM-WELLS - CLAMPED OR FREE, Superlattices and microstructures, 15(2), 1994, pp. 171-174
GROWTH AND CHARACTERIZATION OF (111)B INGAAS GAAS MULTIQUANTUM-WELL PIN DIODE STRUCTURES/
Authors: DAVID JPR GREY R REES GJ PABLA AS SALE TE WOODHEAD J SANCHEZROJAS JL PATE MA HILL G ROBSON PN HOGG RA FISHER TA SKOLNICK MS WHITTAKER DM WILLCOX ARK MOWBRAY DJ
Citation: Jpr. David et al., GROWTH AND CHARACTERIZATION OF (111)B INGAAS GAAS MULTIQUANTUM-WELL PIN DIODE STRUCTURES/, Journal of electronic materials, 23(9), 1994, pp. 975-982
SPECTROSCOPIC STUDY OF PIEZOELECTRIC FIELD EFFECTS IN INGAAS GAAS MULTIQUANTUM WELLS GROWN ON (111)B ORIENTED GAAS SUBSTRATES/
Authors: FISHER TA HOGG RA WILLCOX ARK WHITTAKER DM SKOLNICK MS MOWBRAY DJ DAVID JPR PABLA AS REES GJ GREY R SANCHEZROJAS JL WOODHEAD J HILL G PATE MA ROBSON PN
Citation: Ta. Fisher et al., SPECTROSCOPIC STUDY OF PIEZOELECTRIC FIELD EFFECTS IN INGAAS GAAS MULTIQUANTUM WELLS GROWN ON (111)B ORIENTED GAAS SUBSTRATES/, Solid-state electronics, 37(4-6), 1994, pp. 645-648
NONLINEAR-OPTICAL RESPONSE, SCREENING, AND DISTRIBUTION OF STRAIN IN PIEZOELECTRIC MULTIPLE-QUANTUM WELLS
Authors: HUANG XR HARKEN DR CARTWRIGHT AN MCCALLUM DS SMIRL AL SANCHEZROJAS JL SACEDON A GONZALEZSANZ F CALLEJA E MUNOZ E
Citation: Xr. Huang et al., NONLINEAR-OPTICAL RESPONSE, SCREENING, AND DISTRIBUTION OF STRAIN IN PIEZOELECTRIC MULTIPLE-QUANTUM WELLS, Journal of applied physics, 76(12), 1994, pp. 7870-7873
ROOM-TEMPERATURE AND LOW-TEMPERATURE ASSESSMENT OF PSEUDOMORPHIC ALGAAS INGAAS/GAAS HIGH-ELECTRON-MOBILITY TRANSISTOR STRUCTURES BY PHOTOLUMINESCENCE SPECTROSCOPY/
Authors: GILPEREZ JM SANCHEZROJAS JL MUNOZ E CALLEJA E DAVID JPR REDDY M HILL G SANCHEZDEHESA J
Citation: Jm. Gilperez et al., ROOM-TEMPERATURE AND LOW-TEMPERATURE ASSESSMENT OF PSEUDOMORPHIC ALGAAS INGAAS/GAAS HIGH-ELECTRON-MOBILITY TRANSISTOR STRUCTURES BY PHOTOLUMINESCENCE SPECTROSCOPY/, Journal of applied physics, 76(10), 1994, pp. 5931-5944
CONDUCTION-BAND ENGINEERING IN PIEZOELECTRIC[111] MULTIPLE-QUANTUM-WELL P-I-N PHOTODIODES
Authors: SANCHEZROJAS JL SACEDON A CALLE F CALLEJA E MUNOZ E
Citation: Jl. Sanchezrojas et al., CONDUCTION-BAND ENGINEERING IN PIEZOELECTRIC[111] MULTIPLE-QUANTUM-WELL P-I-N PHOTODIODES, Applied physics letters, 65(17), 1994, pp. 2214-2216
DEPENDENCE ON THE IN CONCENTRATION OF THE PIEZOELECTRIC FIELD IN (111)B INGAAS GAAS STRAINED HETEROSTRUCTURES/
Authors: SANCHEZROJAS JL SACEDON A GONZALEZSANZ F CALLEJA E MUNOZ E
Citation: Jl. Sanchezrojas et al., DEPENDENCE ON THE IN CONCENTRATION OF THE PIEZOELECTRIC FIELD IN (111)B INGAAS GAAS STRAINED HETEROSTRUCTURES/, Applied physics letters, 65(16), 1994, pp. 2042-2044
INFLUENCE OF DELTA-DOPING PROFILE AND INTERFACE ROUGHNESS ON THE TRANSPORT-PROPERTIES OF PSEUDOMORPHIC HETEROSTRUCTURES
Authors: DEAVILA SF SANCHEZROJAS JL GONZALEZSANZ F CALLEJA E MUNOZ E HIESINGER P KOHLER K JANTZ W
Citation: Sf. Deavila et al., INFLUENCE OF DELTA-DOPING PROFILE AND INTERFACE ROUGHNESS ON THE TRANSPORT-PROPERTIES OF PSEUDOMORPHIC HETEROSTRUCTURES, Applied physics letters, 64(7), 1994, pp. 907-909
Risultati: 1-25 | 26-29