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Results: 1-25/28
Authors:
ASTIE S
GUE AM
SCHEID E
LESCOUZERES L
CASSAGNES A
Citation: S. Astie et al., OPTIMIZATION OF AN INTEGRATED SNO2 GAS SENSOR USING A FEM SIMULATOR, Sensors and actuators. A, Physical, 69(3), 1998, pp. 205-211
Authors:
HEINEL LA
SCHEID E
ROSENWASSER RH
MAYROVITZ HN
Citation: La. Heinel et al., COMPARISON OF P-SELECTIN EXPRESSION IN CORONARY-ARTERY AND VENOUS ENDOTHELIAL-CELL MONOLAYERS, The FASEB journal, 12(5), 1998, pp. 4644-4644
Authors:
TEMPLEBOYER P
ROSSI C
SAINTETIENNE E
SCHEID E
Citation: P. Templeboyer et al., RESIDUAL-STRESS IN LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION SINX FILMS DEPOSITED FROM SILANE AND AMMONIA, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(4), 1998, pp. 2003-2007
Authors:
LAGHLA Y
SCHEID E
VERGNES H
COUDERC JP
Citation: Y. Laghla et al., ELECTRONIC-PROPERTIES AND MICROSTRUCTURE OF UNDOPED, AND B-DOPED OR P-DOPED POLYSILICON DEPOSITED BY LPCVD, Solar energy materials and solar cells, 48(1-4), 1997, pp. 303-314
Authors:
ROSSI C
SCHEID E
ESTEVE D
Citation: C. Rossi et al., THEORETICAL AND EXPERIMENTAL-STUDY OF SILICON MICROMACHINED MICROHEATER WITH DIELECTRIC STACKED MEMBRANES, Sensors and actuators. A, Physical, 63(3), 1997, pp. 183-189
Authors:
TEMPLEBOYER P
SCHEID E
FAUGERE G
ROUSSET B
Citation: P. Templeboyer et al., RESIDUAL-STRESS IN SILICON FILMS DEPOSITED BY LPCVD FROM DISILANE, Thin solid films, 310(1-2), 1997, pp. 234-237
Authors:
LAGHLA Y
SCHEID E
Citation: Y. Laghla et E. Scheid, OPTICAL STUDY OF UNDOPED, B-DOPED OR P-DOPED POLYSILICON, Thin solid films, 306(1), 1997, pp. 67-73
Authors:
GARRIDO B
MORENO JA
LOPEZ M
VILA A
SAMITIER J
MORANTE JR
SCHEID E
Citation: B. Garrido et al., STRUCTURE AND PHOTOLUMINESCENCE OF ANNEALED SEMIINSULATING POLYCRYSTALLINE SILICON MATERIAL OBTAINED BY DISILANE, Thin solid films, 296(1-2), 1997, pp. 98-101
Authors:
BOYER PT
OLIVIE F
KASSMI K
SCHEID E
SARRABAYROUSE G
MARTINEZ A
Citation: Pt. Boyer et al., ELECTRICAL CHARACTERISTICS OF THIN SILICA LAYERS NITRIDED BY LPCVD NITROGEN-DOPED SILICON, Solid-state electronics, 41(7), 1997, pp. 951-955
Authors:
CORDIER C
DEHAN E
SCHEID E
DUVERNEUIL P
Citation: C. Cordier et al., SEMIINSULATING PROPERTIES CONTROL BY CVD PROCESS MODELING, Materials science & engineering. B, Solid-state materials for advanced technology, 37(1-3), 1996, pp. 30-34
Authors:
TOUNSI A
SCHEID E
DUVERNEUIL P
COUDERC JF
Citation: A. Tounsi et al., CHEMICAL-VAPOR-DEPOSITION OF SILICON DOPE D IN-SITU WITH PHOSPHORUS .1. EXPERIMENTAL-STUDY, Canadian journal of chemical engineering, 74(6), 1996, pp. 941-949
Authors:
TOUNSI A
SCHEID E
DUVERNEUIL P
COUDERC JP
Citation: A. Tounsi et al., CHEMICAL-VAPOR-DEPOSITION OF SILICON DOPE D IN-SITU WITH PHOSPHORUS .2. THEORETICAL-ANALYSIS AND MODELING, Canadian journal of chemical engineering, 74(6), 1996, pp. 950-959
Authors:
DEHAN E
PEDROVIEJO JJ
SCHEID E
MORANTE JR
Citation: E. Dehan et al., SEMIINSULATING POLYCRYSTALLINE SILICON BY LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION FROM DISILANE AND NITROUS-OXIDE, JPN J A P 1, 34(9A), 1995, pp. 4666-4672
Authors:
HENDA R
LAANAB L
SCHEID E
FOURMEAUX R
Citation: R. Henda et al., CHARACTERIZATION OF CHEMICALLY VAPOR-DEPOSITED SILICON-NITRIDE FILMS FROM DISILANE AND AMMONIA, JPN J A P 2, 34(4A), 1995, pp. 437-439
Authors:
VERGNES H
SCHEID E
DUVERNEUIL P
COUDERC JP
Citation: H. Vergnes et al., DEPOSITION OF THICK LAYERS, IN A NEW CVD REACTOR, Journal de physique. IV, 5(C5), 1995, pp. 997-1004
Authors:
CORDIER C
DEHAN E
SCHEID E
DUVERNEUIL P
COUDERC JP
Citation: C. Cordier et al., SIPOS DEPOSITION FROM DISILANE - EXPERIMENTAL-STUDY AND MODELING, Journal de physique. IV, 5(C5), 1995, pp. 315-322
Authors:
CORDIER C
DEHAN E
SCHEID E
DUVERNEUIL P
COUDERC JP
Citation: C. Cordier et al., SIPOS DEPOSITION FROM DISILANE - EXPERIMENTAL-STUDY AND MODELING, Journal de physique. IV, 5(C5), 1995, pp. 315-322
Authors:
CAMPO E
SCHEID E
BIELLEDASPET D
GUILLEMET JP
Citation: E. Campo et al., INFLUENCE OF RAPID THERMAL AND LOW-TEMPERATURE PROCESSING ON THE ELECTRICAL-PROPERTIES OF POLYSILICON THIN-FILM TRANSISTORS, IEEE transactions on semiconductor manufacturing, 8(3), 1995, pp. 298-303
Authors:
HENDA R
SCHEID E
BIELLEDASPET D
Citation: R. Henda et al., INVESTIGATION OF THE THERMAL-BEHAVIOR OF A RTP FURNACE, IEEE transactions on semiconductor manufacturing, 8(3), 1995, pp. 362-365
Authors:
SCHEID E
Citation: E. Scheid, THE WORK OF THE HOUSEWIFE 1915-1965 - REM INISCENCES ON 50 YEARS HOUSEWORK - GERMAN - KUHN,B, Zeitschrift fur Volkskunde, 91(2), 1995, pp. 310-311
Authors:
DEHAN E
TEMPLEBOYER P
HENDA R
PEDROVIEJO JJ
SCHEID E
Citation: E. Dehan et al., OPTICAL AND STRUCTURAL-PROPERTIES OF SIOX AND SINX MATERIALS, Thin solid films, 266(1), 1995, pp. 14-19
Authors:
SCHEID E
BOYER PT
SAMITIER J
ELHASSANI A
Citation: E. Scheid et al., OXIDATION PROPERTIES OF NITROGEN-DOPED SILICON FILMS DEPOSITED FROM SI2H6 AND NH3, JPN J A P 2, 33(3A), 1994, pp. 120000365-120000367
Authors:
SCHEID E
Citation: E. Scheid, WITNESSES TO AN ERA - SELECTED OBJECTS FR OM THE GERMAN-HISTORICAL-MUSEUM - GERMAN - BEIER,R, KORFF,G, Zeitschrift fur Volkskunde, 90(2), 1994, pp. 289-289
Authors:
MESSAOUD AY
SCHEID E
SARRABAYROUSE G
CLAVERIE A
MARTINEZ A
Citation: Ay. Messaoud et al., A COMPREHENSIVE STUDY OF THIN RAPID THERMAL OXIDE-FILMS, JPN J A P 1, 32(12A), 1993, pp. 5805-5812
Authors:
TOUNSI A
SCHEID E
AZZARO C
DUVERNEUIL P
COUDERC JP
Citation: A. Tounsi et al., ELABORATION OF IN-SITU PHOSPHORUS-DOPED POLYSILICON FILMS UNDER LPCVDCONDITIONS - PROCESS MODELING AND CHARACTERIZATION, Journal de physique. IV, 3(C3), 1993, pp. 123-130