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Results: 1-9 |
Results: 9
TEMPERATURE-DEPENDENCE OF THE AL-FILL PROCESSES FOR SUBMICRON-VIA STRUCTURES
Authors: WEBER SJ IGGULDEN RC SCHNABEL RF WEIGAND P RESTAINO DD BRODSKY SB MEHTER EA CLEVENGER LA
Citation: Sj. Weber et al., TEMPERATURE-DEPENDENCE OF THE AL-FILL PROCESSES FOR SUBMICRON-VIA STRUCTURES, Thin solid films, 320(1), 1998, pp. 63-66
LINEWIDTH AND UNDERLAYER INFLUENCE ON TEXTURE IN SUBMICROMETER-WIDE AL AND ALCU LINES
Authors: HURD JL RODBELL KP GIGNAC LM CLEVENGER LA IGGULDEN RC SCHNABEL RF WEBER SJ SCHMIDT NH
Citation: Jl. Hurd et al., LINEWIDTH AND UNDERLAYER INFLUENCE ON TEXTURE IN SUBMICROMETER-WIDE AL AND ALCU LINES, Applied physics letters, 72(3), 1998, pp. 326-328
DRY ETCH CHALLENGES OF 0.25 MU-M DUAL DAMASCENE STRUCTURES
Authors: SCHNABEL RF DOBUZINSKY D GAMBINO J MULLER KP WANG F PERNG DC PALM H
Citation: Rf. Schnabel et al., DRY ETCH CHALLENGES OF 0.25 MU-M DUAL DAMASCENE STRUCTURES, Microelectronic engineering, 37-8(1-4), 1997, pp. 59-65
MASKLESS SELECTIVE-AREA GROWTH OF INP ON SUB-MU-M V-GROOVE PATTERNED SI(OO1)
Authors: SCHNABEL RF KROST A GRUNDMANN M BIMBERG D
Citation: Rf. Schnabel et al., MASKLESS SELECTIVE-AREA GROWTH OF INP ON SUB-MU-M V-GROOVE PATTERNED SI(OO1), Journal of electronic materials, 24(11), 1995, pp. 1625-1629
INTERFACE DEFECT STRUCTURE OF METAL-ORGANIC CHEMICALLY VAPOR-DEPOSITED INP AND GAAS ON SI(111)
Authors: CERVA H KROST A SCHNABEL RF BIMBERG D
Citation: H. Cerva et al., INTERFACE DEFECT STRUCTURE OF METAL-ORGANIC CHEMICALLY VAPOR-DEPOSITED INP AND GAAS ON SI(111), Philosophical magazine. A. Physics of condensed matter. Defects and mechanical properties, 71(5), 1995, pp. 1145-1159
HIGH QUANTUM EFFICIENCY INP MESAS GROWN BY HYBRID EPITAXY ON SI SUBSTRATES
Authors: SCHNABEL RF GRUNDMANN M ENGELHARDT R OERTEL J KROST A BIMBERG D OPITZ R SCHMIDBAUER M KOHLER R
Citation: Rf. Schnabel et al., HIGH QUANTUM EFFICIENCY INP MESAS GROWN BY HYBRID EPITAXY ON SI SUBSTRATES, Journal of crystal growth, 156(4), 1995, pp. 337-342
HIGH-RESOLUTION X-RAY-ANALYSIS OF COMPRESSIVELY STRAINED 1.55 MU-M GAINAS ALGAINAS MULTIQUANTUM-WELL STRUCTURES NEAR THE CRITICAL THICKNESS/
Authors: KROST A BOHRER J DADGAR A SCHNABEL RF BIMBERG D HANSMANN S BURKHARD H
Citation: A. Krost et al., HIGH-RESOLUTION X-RAY-ANALYSIS OF COMPRESSIVELY STRAINED 1.55 MU-M GAINAS ALGAINAS MULTIQUANTUM-WELL STRUCTURES NEAR THE CRITICAL THICKNESS/, Applied physics letters, 67(22), 1995, pp. 3325-3327
DEFECT REDUCTION IN GAAS AND INP GROWN ON PLANAR SI(111) AND ON PATTERNED SI(001) SUBSTRATES
Authors: KROST A SCHNABEL RF HEINRICHSDORFF F ROSSOW U BIMBERG D CERVA H
Citation: A. Krost et al., DEFECT REDUCTION IN GAAS AND INP GROWN ON PLANAR SI(111) AND ON PATTERNED SI(001) SUBSTRATES, Journal of crystal growth, 145(1-4), 1994, pp. 314-320
EPITAXY OF HIGH-RESISTIVITY INP ON SI
Authors: SCHNABEL RF KROST A GRUNDMANN M HEINRICHSDORFF F BIMBERG D PILATZEK M HARDE P
Citation: Rf. Schnabel et al., EPITAXY OF HIGH-RESISTIVITY INP ON SI, Applied physics letters, 63(26), 1993, pp. 3607-3609
Risultati: 1-9 |