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Results: 1-19 |
Results: 19
POST POLY-SI GATE RAPID THERMAL NITRIDATION FOR BORON PENETRATION REDUCTION AND OXIDE RELIABILITY IMPROVEMENT
Authors: ZHOU ZX TINKLER S SCHRODER DK PAULSEN R DAHL P KEATING R PARK C
Citation: Zx. Zhou et al., POST POLY-SI GATE RAPID THERMAL NITRIDATION FOR BORON PENETRATION REDUCTION AND OXIDE RELIABILITY IMPROVEMENT, IEEE electron device letters, 19(7), 1998, pp. 237-240
LOW-FREQUENCY NOISE IN NEAR-FULLY-DEPLETED TFSOI MOSFETS
Authors: BABCOCK JA SCHRODER DK TSENG YC
Citation: Ja. Babcock et al., LOW-FREQUENCY NOISE IN NEAR-FULLY-DEPLETED TFSOI MOSFETS, IEEE electron device letters, 19(2), 1998, pp. 40-43
CORONA-OXIDE-SEMICONDUCTOR DEVICE CHARACTERIZATION
Authors: SCHRODER DK FUNG MS VERKUIL RL PANDEY S HOWLAND WH KLEEFSTRA M
Citation: Dk. Schroder et al., CORONA-OXIDE-SEMICONDUCTOR DEVICE CHARACTERIZATION, Solid-state electronics, 42(4), 1998, pp. 505-512
DEGRADATION OF THIN TUNNEL GATE OXIDE UNDER CONSTANT FOWLER-NORDHEIM CURRENT STRESS FOR A FLASH EEPROM
Authors: PARK YB SCHRODER DK
Citation: Yb. Park et Dk. Schroder, DEGRADATION OF THIN TUNNEL GATE OXIDE UNDER CONSTANT FOWLER-NORDHEIM CURRENT STRESS FOR A FLASH EEPROM, I.E.E.E. transactions on electron devices, 45(6), 1998, pp. 1361-1368
A SIMPLE TECHNIQUE TO MEASURE GENERATION LIFETIME IN PARTIALLY DEPLETED SOI MOSFETS
Authors: SHIN H RACANELLI M HUANG WM FOERSTNER J CHOI S SCHRODER DK
Citation: H. Shin et al., A SIMPLE TECHNIQUE TO MEASURE GENERATION LIFETIME IN PARTIALLY DEPLETED SOI MOSFETS, I.E.E.E. transactions on electron devices, 45(11), 1998, pp. 2378-2380
LEAKAGE CURRENT MODELS OF THIN-FILM SILICON-ON-INSULATOR DEVICES
Authors: SHIN H HONG S WETTEROTH T WILSON SR SCHRODER DK
Citation: H. Shin et al., LEAKAGE CURRENT MODELS OF THIN-FILM SILICON-ON-INSULATOR DEVICES, Applied physics letters, 72(10), 1998, pp. 1199-1201
C-T ANALYSIS OF MOS CAPACITORS UNDER CONSTANT-CURRENT STRESS
Authors: PARK YB SCHRODER DK LIM IH
Citation: Yb. Park et al., C-T ANALYSIS OF MOS CAPACITORS UNDER CONSTANT-CURRENT STRESS, IEEE electron device letters, 18(4), 1997, pp. 132-134
REAL-TIME IN-SITU THICKNESS CONTROL OF FABRY-PEROT CAVITIES IN MBE BY44 AND 88 WAVELENGTH ELLIPSOMETRY
Authors: KUO CH BOONZAAYER MD DEHERRERA MF SCHRODER DK MARACAS GN JOHS B
Citation: Ch. Kuo et al., REAL-TIME IN-SITU THICKNESS CONTROL OF FABRY-PEROT CAVITIES IN MBE BY44 AND 88 WAVELENGTH ELLIPSOMETRY, Journal of crystal growth, 175, 1997, pp. 281-285
SCALED SILICON MOSFETS - DEGRADATION OF THE TOTAL GATE CAPACITANCE
Authors: VASILESKA D SCHRODER DK FERRY DK
Citation: D. Vasileska et al., SCALED SILICON MOSFETS - DEGRADATION OF THE TOTAL GATE CAPACITANCE, I.E.E.E. transactions on electron devices, 44(4), 1997, pp. 584-587
CARRIER LIFETIMES IN SILICON
Authors: SCHRODER DK
Citation: Dk. Schroder, CARRIER LIFETIMES IN SILICON, I.E.E.E. transactions on electron devices, 44(1), 1997, pp. 160-170
EX-SITU ELLIPSOMETRY CHARACTERIZATION OF EXCIMER-LASER ANNEALED AMORPHOUS-SILICON THIN-FILMS GROWN BY LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION
Authors: KUO CH HSIEH IC SCHRODER DK MARACAS GN CHEN S SIGMON TW
Citation: Ch. Kuo et al., EX-SITU ELLIPSOMETRY CHARACTERIZATION OF EXCIMER-LASER ANNEALED AMORPHOUS-SILICON THIN-FILMS GROWN BY LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION, Applied physics letters, 71(3), 1997, pp. 359-361
IMPROVEMENT IN GATE OXIDE INTEGRITY ON THIN-FILM SILICON-ON-INSULATORSUBSTRATES BY LATERAL GETTERING
Authors: HONG SQ WETTEROTH T SHIN H WILSON SR WERHO D LEE TC SCHRODER DK
Citation: Sq. Hong et al., IMPROVEMENT IN GATE OXIDE INTEGRITY ON THIN-FILM SILICON-ON-INSULATORSUBSTRATES BY LATERAL GETTERING, Applied physics letters, 71(23), 1997, pp. 3397-3399
HETEROEPITAXIAL SI1-X-YGEXCY FILMS ON (100)SI SUBSTRATES FOR FUTURE LOW-POWER APPLICATIONS
Authors: ALFORD TL BAIR AE ATZMON Z STOUT LM BALSTER SG SCHRODER DK ROEDEL RJ
Citation: Tl. Alford et al., HETEROEPITAXIAL SI1-X-YGEXCY FILMS ON (100)SI SUBSTRATES FOR FUTURE LOW-POWER APPLICATIONS, Thin solid films, 270(1-2), 1995, pp. 632-636
MOBILE ION MONITORING BY SIMULTANEOUS TRIANGULAR VOLTAGE SWEEP
Authors: STAUFFER L WILEY T TIWALD T HANCE R RAICHOUDHURY P SCHRODER DK
Citation: L. Stauffer et al., MOBILE ION MONITORING BY SIMULTANEOUS TRIANGULAR VOLTAGE SWEEP, Solid state technology, 1995, pp. 3
DEEP-LEVEL IMPURITIES IN EDGE-DEFINED FILM-FED-GROWTH SILICON
Authors: PARK SH SCHRODER DK
Citation: Sh. Park et Dk. Schroder, DEEP-LEVEL IMPURITIES IN EDGE-DEFINED FILM-FED-GROWTH SILICON, Journal of applied physics, 78(2), 1995, pp. 801-810
IN-SITU GETTERING OF EDGE-DEFINED FILM-FED GROWTH-SILICON IN A CO AMBIENT
Authors: BALSTER SG SCHRODER DK BAILEY J KALEJS JP
Citation: Sg. Balster et al., IN-SITU GETTERING OF EDGE-DEFINED FILM-FED GROWTH-SILICON IN A CO AMBIENT, Journal of applied physics, 77(1), 1995, pp. 371-377
COPLANAR WAVE-GUIDES AND MICROWAVE INDUCTORS ON SILICON SUBSTRATES
Authors: REYES AC ELGHAZALY SM DORN SJ DYDYK M SCHRODER DK PATTERSON H
Citation: Ac. Reyes et al., COPLANAR WAVE-GUIDES AND MICROWAVE INDUCTORS ON SILICON SUBSTRATES, IEEE transactions on microwave theory and techniques, 43(9), 1995, pp. 2016-2022
CHARGES TRAPPED THROUGHOUT THE OXIDE AND THEIR IMPACT ON THE FOWLER-NORDHEIM CURRENT IN MOS DEVICES
Authors: KU PS SCHRODER DK
Citation: Ps. Ku et Dk. Schroder, CHARGES TRAPPED THROUGHOUT THE OXIDE AND THEIR IMPACT ON THE FOWLER-NORDHEIM CURRENT IN MOS DEVICES, I.E.E.E. transactions on electron devices, 41(9), 1994, pp. 1669-1672
EVALUATION OF Q(BD) FOR ELECTRONS TUNNELING FROM THE SI SIO2 INTERFACE COMPARED TO ELECTRON-TUNNELING FROM THE POLY-SI/SIO2 INTERFACE/
Authors: GONG SS BURNHAM ME THEODORE ND SCHRODER DK
Citation: Ss. Gong et al., EVALUATION OF Q(BD) FOR ELECTRONS TUNNELING FROM THE SI SIO2 INTERFACE COMPARED TO ELECTRON-TUNNELING FROM THE POLY-SI/SIO2 INTERFACE/, I.E.E.E. transactions on electron devices, 40(7), 1993, pp. 1251-1257
Risultati: 1-19 |