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Results: 1-10 |
Results: 10
ELECTROMIGRATION TESTING OF INTEGRATED-CIRCUIT INTERCONNECTIONS
Authors: FANTINI F LLOYD JR DEMUNARI I SCORZONI A
Citation: F. Fantini et al., ELECTROMIGRATION TESTING OF INTEGRATED-CIRCUIT INTERCONNECTIONS, Microelectronic engineering, 40(3-4), 1998, pp. 207-221
A COMPARISON BETWEEN NORMALLY AND HIGHLY ACCELERATED ELECTROMIGRATIONTESTS
Authors: FOLEY S SCORZONI A BALBONI R IMPRONTA M DEMUNARI I MATHEWSON A FANTINI F
Citation: S. Foley et al., A COMPARISON BETWEEN NORMALLY AND HIGHLY ACCELERATED ELECTROMIGRATIONTESTS, Microelectronics and reliability, 38(6-8), 1998, pp. 1021-1027
ARE HIGH-RESOLUTION RESISTOMETRIC METHODS REALLY USEFUL FOR THE EARLYDETECTION OF ELECTROMIGRATION DAMAGE
Authors: SCORZONI A FRANCESCHINI S BALBONI R IMPRONTA M DEMUNARI I FANTINI F
Citation: A. Scorzoni et al., ARE HIGH-RESOLUTION RESISTOMETRIC METHODS REALLY USEFUL FOR THE EARLYDETECTION OF ELECTROMIGRATION DAMAGE, Microelectronics and reliability, 37(10-11), 1997, pp. 1479-1482
RESISTANCE CHANGES DUE TO CU TRANSPORT AND PRECIPITATION DURING ELECTROMIGRATION IN SUBMICROMETRIC AL-0.5-PERCENT-CU LINES
Authors: SCORZONI A DEMUNARI I BALBONI R TAMARRI F GARULLI A FANTINI F
Citation: A. Scorzoni et al., RESISTANCE CHANGES DUE TO CU TRANSPORT AND PRECIPITATION DURING ELECTROMIGRATION IN SUBMICROMETRIC AL-0.5-PERCENT-CU LINES, Microelectronics and reliability, 36(11-12), 1996, pp. 1691-1694
NONLINEAR RESISTANCE BEHAVIOR IN THE EARLY STAGES AND AFTER ELECTROMIGRATION IN AL-SI LINES
Authors: SCORZONI A DEMUNARI I STULENS H DHAEGER V
Citation: A. Scorzoni et al., NONLINEAR RESISTANCE BEHAVIOR IN THE EARLY STAGES AND AFTER ELECTROMIGRATION IN AL-SI LINES, Journal of applied physics, 80(1), 1996, pp. 143-150
ON THE ASTM ELECTROMIGRATION TEST STRUCTURE APPLIED TO AL-1-PERCENT-SI TIN/TI BAMBOO METAL LINES/
Authors: DEMUNARI I VANZI M SCORZONI A FANTINI F
Citation: I. Demunari et al., ON THE ASTM ELECTROMIGRATION TEST STRUCTURE APPLIED TO AL-1-PERCENT-SI TIN/TI BAMBOO METAL LINES/, Quality and reliability engineering international, 11(1), 1995, pp. 33-39
ACTIVATION-ENERGY IN THE EARLY-STAGE OF ELECTROMIGRATION IN AL-1-PERCENT SI TIN/TI BAMBOO LINES/
Authors: DEMUNARI I SCORZONI A TAMARRI F FANTINI F
Citation: I. Demunari et al., ACTIVATION-ENERGY IN THE EARLY-STAGE OF ELECTROMIGRATION IN AL-1-PERCENT SI TIN/TI BAMBOO LINES/, Semiconductor science and technology, 10(3), 1995, pp. 255-259
DRAWBACKS TO USING NIST ELECTROMIGRATION TEST-STRUCTURES TO TEST BAMBOO METAL LINES
Authors: DEMUNARI I SCORZONI A TAMARRI F GOVONI D CORTICELLI F FANTINI F
Citation: I. Demunari et al., DRAWBACKS TO USING NIST ELECTROMIGRATION TEST-STRUCTURES TO TEST BAMBOO METAL LINES, I.E.E.E. transactions on electron devices, 41(12), 1994, pp. 2276-2280
ELECTROMIGRATION IN THIN-FILMS FOR MICROELECTRONICS
Authors: BALDINI GL DEMUNARI I SCORZONI A FANTINI F
Citation: Gl. Baldini et al., ELECTROMIGRATION IN THIN-FILMS FOR MICROELECTRONICS, Microelectronics and reliability, 33(11-12), 1993, pp. 1779-1805
RESISTANCE DECAY AFTER ELECTROMIGRATION AS THE EFFECT OF MECHANICAL-STRESS RELAXATION
Authors: BALDINI GL SCORZONI A TAMARRI F
Citation: Gl. Baldini et al., RESISTANCE DECAY AFTER ELECTROMIGRATION AS THE EFFECT OF MECHANICAL-STRESS RELAXATION, Microelectronics and reliability, 33(11-12), 1993, pp. 1841-1844
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