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Results: 1-17 |
Results: 17
A SIMPLE-MODEL FOR LOW-ENERGY ION-SOLID INTERACTIONS
Authors: MOHAJERZADEH S SELVAKUMAR CR
Citation: S. Mohajerzadeh et Cr. Selvakumar, A SIMPLE-MODEL FOR LOW-ENERGY ION-SOLID INTERACTIONS, Journal of applied physics, 81(7), 1997, pp. 3003-3006
FABRICATION OF N-N ISO-TYPE DIODES WITH LPCVD-GROWN POLYSILICON ON SILICON STRUCTURES()
Authors: MOHAJERZADEH S SELVAKUMAR CR
Citation: S. Mohajerzadeh et Cr. Selvakumar, FABRICATION OF N-N ISO-TYPE DIODES WITH LPCVD-GROWN POLYSILICON ON SILICON STRUCTURES(), I.E.E.E. transactions on electron devices, 44(11), 1997, pp. 2041-2043
AN ION-BEAM VAPOR-DEPOSITION TECHNIQUE FOR EPITAXIAL-GROWTH OF SI-GE FILMS ON SI SUBSTRATES
Authors: MOHAJERZADEH S SELVAKUMAR CR BRODIE DE ROBERTSON MD CORBETT JM
Citation: S. Mohajerzadeh et al., AN ION-BEAM VAPOR-DEPOSITION TECHNIQUE FOR EPITAXIAL-GROWTH OF SI-GE FILMS ON SI SUBSTRATES, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(3), 1996, pp. 1963-1966
A LOW-ENERGY ION-BEAM-ASSISTED DEPOSITION TECHNIQUE FOR REALIZING ISO-TYPE SIGE SI HETEROINTERFACE DIODES/
Authors: MOHAJERZADEH S SELVAKUMAR CR BRODIE DE ROBERTSON MD CORBETT JM
Citation: S. Mohajerzadeh et al., A LOW-ENERGY ION-BEAM-ASSISTED DEPOSITION TECHNIQUE FOR REALIZING ISO-TYPE SIGE SI HETEROINTERFACE DIODES/, Thin solid films, 283(1-2), 1996, pp. 182-187
CALCULATION OF DEPLETION LAYER THICKNESS BY INCLUDING THE MOBILE CARRIERS
Authors: MOHAMMADI S SELVAKUMAR CR
Citation: S. Mohammadi et Cr. Selvakumar, CALCULATION OF DEPLETION LAYER THICKNESS BY INCLUDING THE MOBILE CARRIERS, I.E.E.E. transactions on electron devices, 43(1), 1996, pp. 185-188
A LOW-TEMPERATURE ION VAPOR-DEPOSITION TECHNIQUE FOR SILICON AND SILICON-GERMANIUM EPITAXY
Authors: MOHAJERZADEH S SELVAKUMAR CR BRODIE DE ROBERTSON MD CORBETT JM
Citation: S. Mohajerzadeh et al., A LOW-TEMPERATURE ION VAPOR-DEPOSITION TECHNIQUE FOR SILICON AND SILICON-GERMANIUM EPITAXY, Canadian journal of physics, 74, 1996, pp. 69-73
A NOVEL N(-POLYSILICON ON N-SILICON ISO-TYPE DIODE())
Authors: MOHAJERZADEH S SELVAKUMAR CR
Citation: S. Mohajerzadeh et Cr. Selvakumar, A NOVEL N(-POLYSILICON ON N-SILICON ISO-TYPE DIODE()), Canadian journal of physics, 74, 1996, pp. 186-188
STUDY OF IN-SITU SURFACE CLEANING FOR SI AND SIGE EPITAXY ON SI WITH A NOVEL ION-BEAM VAPOR ASSISTED DEPOSITION TECHNIQUE
Authors: MOHAJERZADEH S SELVAKUMAR CR BRODIE DE ROBERTSON MD CORBETT JM
Citation: S. Mohajerzadeh et al., STUDY OF IN-SITU SURFACE CLEANING FOR SI AND SIGE EPITAXY ON SI WITH A NOVEL ION-BEAM VAPOR ASSISTED DEPOSITION TECHNIQUE, Progress in Surface Science, 50(1-4), 1995, pp. 347-356
EARLY-VOLTAGE DEGRADATION IN HETEROSTRUCTURE BIPOLAR-TRANSISTORS DUE TO INTERFACE STATES
Authors: MOHAJERZADEH S SELVAKUMAR CR NOEL JP HOUGHTON DC
Citation: S. Mohajerzadeh et al., EARLY-VOLTAGE DEGRADATION IN HETEROSTRUCTURE BIPOLAR-TRANSISTORS DUE TO INTERFACE STATES, Solid-state electronics, 38(1), 1995, pp. 131-133
ION-BEAM VAPOR-DEPOSITION FOR SI EPITAXY AT LOW SUBSTRATE TEMPERATURES
Authors: MOHAJERZADEH S SELVAKUMAR CR BRODIE DE ROBERTSON MD CORBETT JM
Citation: S. Mohajerzadeh et al., ION-BEAM VAPOR-DEPOSITION FOR SI EPITAXY AT LOW SUBSTRATE TEMPERATURES, Journal of applied physics, 78(3), 1995, pp. 2057-2059
A FIELD-ASSISTED EMISSION MODEL OF INTERFACE STATES IN HETEROSTRUCTURE DEVICES
Authors: MOHAJERZADEH S SELVAKUMAR CR NOEL JP HOUGHTON DC
Citation: S. Mohajerzadeh et al., A FIELD-ASSISTED EMISSION MODEL OF INTERFACE STATES IN HETEROSTRUCTURE DEVICES, Journal of applied physics, 78(12), 1995, pp. 7382-7386
SPECIAL ISSUE ON BIPOLAR BICMOS CMOS DEVICES AND TECHNOLOGIES - FOREWORD/
Authors: IWAI H SELVAKUMAR CR SHENAI K
Citation: H. Iwai et al., SPECIAL ISSUE ON BIPOLAR BICMOS CMOS DEVICES AND TECHNOLOGIES - FOREWORD/, I.E.E.E. transactions on electron devices, 42(3), 1995, pp. 373-376
NUMERICAL-SIMULATION OF A P-N-P-N COLOR SENSOR FOR SIMULTANEOUS COLORDETECTION
Authors: MOHAJERZADEH S NATHAN A SELVAKUMAR CR
Citation: S. Mohajerzadeh et al., NUMERICAL-SIMULATION OF A P-N-P-N COLOR SENSOR FOR SIMULTANEOUS COLORDETECTION, Sensors and actuators. A, Physical, 44(2), 1994, pp. 119-124
A LOW-TEMPERATURE ION-BEAM-ASSISTED DEPOSITION METHOD FOR REALIZING SIGE SI HETEROSTRUCTURES
Authors: MOHAJERZADEH S SELVAKUMAR CR BRODIE DE
Citation: S. Mohajerzadeh et al., A LOW-TEMPERATURE ION-BEAM-ASSISTED DEPOSITION METHOD FOR REALIZING SIGE SI HETEROSTRUCTURES, Solid-state electronics, 37(8), 1994, pp. 1467-1469
A COMMENT ON THE GTCC STORED CHARGE MODEL - REPLY
Authors: HAMEL JS SELVAKUMAR CR
Citation: Js. Hamel et Cr. Selvakumar, A COMMENT ON THE GTCC STORED CHARGE MODEL - REPLY, I.E.E.E. transactions on electron devices, 41(5), 1994, pp. 868-869
ANALYSIS OF BJTS, PSEUDO-HBTS, AND HBTS BY INCLUDING THE EFFECT OF NEUTRAL BASE RECOMBINATION
Authors: MOHAMMADI S SELVAKUMAR CR
Citation: S. Mohammadi et Cr. Selvakumar, ANALYSIS OF BJTS, PSEUDO-HBTS, AND HBTS BY INCLUDING THE EFFECT OF NEUTRAL BASE RECOMBINATION, I.E.E.E. transactions on electron devices, 41(10), 1994, pp. 1708-1715
REACTIVE ION ETCHING OF SOI (SIMOX AND ZMR) SILICON IN NITROGEN-CONTAINING CF4+O2 AND SF6+O2 PLASMAS
Authors: PURBO OW SELVAKUMAR CR MISRA D
Citation: Ow. Purbo et al., REACTIVE ION ETCHING OF SOI (SIMOX AND ZMR) SILICON IN NITROGEN-CONTAINING CF4+O2 AND SF6+O2 PLASMAS, Journal of the Electrochemical Society, 140(9), 1993, pp. 2659-2668
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