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Results:
1-7
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Results: 7
Authors:
SERIN T
Citation: T. Serin, THE INVESTIGATION OF THE ANNEALING EFFECT ON HYDROGENATED AMORPHOUS-SILICON PIN DIODES BY CAPACITANCE TECHNIQUES, Semiconductor science and technology (Print), 13(11), 1998, pp. 1272-1276
Authors:
SERIN T
Citation: T. Serin, THE INVESTIGATION OF AN ANNEALING EFFECT ON THE DENSITY-OF-STATES IN A-SI-H FILM, Semiconductor science and technology, 12(3), 1997, pp. 291-295
Authors:
SERIN T
Citation: T. Serin, THE THERMAL-EQUILIBRIUM CHANGES ON REVERSE BIAS ANNEALING IN SCHOTTKYDIODES, Semiconductor science and technology, 12(11), 1997, pp. 1451-1454
Authors:
ALKAN B
SERIN T
UNAL B
Citation: B. Alkan et al., DISLOCATION SCATTERING OF ELECTRONS IN PLASTICALLY DEFORMED GERMANIUM, Semiconductor science and technology, 11(7), 1996, pp. 1046-1050
Authors:
SERIN T
SERIN N
Citation: T. Serin et N. Serin, DETERMINATION OF ELECTRON-DIFFUSION LENGTH FROM PHOTOCURRENT CHARACTERISTICS OF THE STRUCTURE ITO A-SICH (P-TYPE) A-SIH A-SIH (N-TYPE) PD, Applied physics. A, Solids and surfaces, 59(4), 1994, pp. 431-433
Authors:
SERIN T
SERIN N
Citation: T. Serin et N. Serin, THE EFFECT OF ANNEALING ON THE RESISTANCE OF A P I/N STRUCTURE/, Semiconductor science and technology, 9(11), 1994, pp. 2097-2100
Authors:
SERIN T
SERIN N
Citation: T. Serin et N. Serin, THE EFFECT OF ANNEALING ON SNO2 A-SIC-H(P+-TYPE)/A-SI-H/A-SI-H(N+-TYPE)/AL STRUCTURE/, Semiconductor science and technology, 6(7), 1991, pp. 679-683
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