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Results: 1-7 |
Results: 7
EFFECT OF FLOATING-BODY CHARGE ON SOI MOSFET DESIGN
Authors: WEI A SHERONY MJ ANTONIADIS DA
Citation: A. Wei et al., EFFECT OF FLOATING-BODY CHARGE ON SOI MOSFET DESIGN, I.E.E.E. transactions on electron devices, 45(2), 1998, pp. 430-438
REDUCED PLASMA-INDUCED CHARGING DAMAGE IN SOI MOSFETS
Authors: SHERONY MJ ANTONIADIS DA CHEN AJ MISTRY KR
Citation: Mj. Sherony et al., REDUCED PLASMA-INDUCED CHARGING DAMAGE IN SOI MOSFETS, Solid-state electronics, 41(9), 1997, pp. 1371-1373
REDUCTION OF THRESHOLD VOLTAGE SENSITIVITY IN SOI MOSFETS
Authors: SHERONY MJ SU LT CHUNG JE ANTONIADIS DA
Citation: Mj. Sherony et al., REDUCTION OF THRESHOLD VOLTAGE SENSITIVITY IN SOI MOSFETS, IEEE electron device letters, 16(3), 1995, pp. 100-102
TRANSIENT-BEHAVIOR OF THE KINK EFFECT IN PARTIALLY-DEPLETED SOI MOSFETS
Authors: WEI A SHERONY MJ ANTONIADIS DA
Citation: A. Wei et al., TRANSIENT-BEHAVIOR OF THE KINK EFFECT IN PARTIALLY-DEPLETED SOI MOSFETS, IEEE electron device letters, 16(11), 1995, pp. 494-496
OPTIMIZATION OF SERIES RESISTANCE IN SUB-0.2 MU-M SOI MOSFETS (VOL 15, PG 145, 1994)
Authors: SU LT SHERONY MJ HU H CHUNG JE ANTONIADIS DA
Citation: Lt. Su et al., OPTIMIZATION OF SERIES RESISTANCE IN SUB-0.2 MU-M SOI MOSFETS (VOL 15, PG 145, 1994), IEEE electron device letters, 15(9), 1994, pp. 363-365
OPTIMIZATION OF SERIES RESISTANCE IN SUB-0.2 MU-M SOI MOSFETS
Authors: SU LT SHERONY MJ HU H CHUNG JE ANTONIADIS DA
Citation: Lt. Su et al., OPTIMIZATION OF SERIES RESISTANCE IN SUB-0.2 MU-M SOI MOSFETS, IEEE electron device letters, 15(5), 1994, pp. 145-147
SOI MOSFET EFFECTIVE CHANNEL MOBILITY
Authors: SHERONY MJ SU LT CHUNG JE ANTONIADIS DA
Citation: Mj. Sherony et al., SOI MOSFET EFFECTIVE CHANNEL MOBILITY, I.E.E.E. transactions on electron devices, 41(2), 1994, pp. 276-278
Risultati: 1-7 |