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Results:
1-17
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Results: 17
Authors:
MURAKAMI Y
SATOH Y
FURUYA H
SHINGYOUJI T
Citation: Y. Murakami et al., EFFECTS OF OXYGEN-RELATED DEFECTS ON THE LEAKAGE CURRENT OF SILICON PN JUNCTIONS/, Journal of applied physics, 84(6), 1998, pp. 3175-3186
Authors:
KONDO H
YOSHINOBU T
SHINGYOUJI T
IWASAKI H
Citation: H. Kondo et al., SIMULATION OF LIGHT-SCATTERING BY A PARTICLE ON A FILM-COATED SUBSTRATE USING COUPLED-DIPOLE METHOD, Optical review, 3(6B), 1996, pp. 497-500
Authors:
SATOH Y
SHIOTA T
MURAKAMI Y
SHINGYOUJI T
FURUYA H
Citation: Y. Satoh et al., DEGRADATION OF DIELECTRIC-BREAKDOWN FIELD OF THERMAL SIO2-FILMS DUE TO STRUCTURAL DEFECTS IN CZOCHRALSKI SILICON SUBSTRATES, Journal of applied physics, 79(10), 1996, pp. 7944-7957
Authors:
MURAKAMI Y
ABE H
SHINGYOUJI T
Citation: Y. Murakami et al., CALCULATION OF DIFFUSION COMPONENT OF LEAKAGE CURRENT IN PN JUNCTIONSFORMED IN VARIOUS TYPES OF SILICON-WAFERS (INTRINSIC GETTERING, EPITAXIAL, SILICON-ON-INSULATOR), JPN J A P 1, 34(3), 1995, pp. 1477-1482
Authors:
ISHIGAMI S
ISHII S
SHINYASHIKI H
FURUYA H
SHINGYOUJI T
Citation: S. Ishigami et al., METAL IMPURITY TRAPPING EFFECT BY STRESS AT EDGES OF LOCAL OXIDATION OF SILICON STRUCTURE, JPN J A P 1, 33(4A), 1994, pp. 1728-1734
Authors:
ISHIGAMI S
SHINYASHIKI H
FURUYA H
SHINGYOUJI T
Citation: S. Ishigami et al., A STUDY OF DEFECT FORMATION MECHANISM AT EDGES OF LOCAL OXIDATION OF SILICON STRUCTURE, JPN J A P 2, 33(9A), 1994, pp. 120001198-120001201
Authors:
SASAKI H
KADOI M
FURUYA H
SHINGYOUJI T
SHIMANUKI Y
Citation: H. Sasaki et al., RADIAL-DISTRIBUTION OF OXYGEN PRECIPITATES IN CZOCHRALSKI SILICON SINGLE-CRYSTALS, JPN J A P 2, 33(1A), 1994, pp. 120000005-120000008
Authors:
MURAKAMI Y
SHINGYOUJI T
Citation: Y. Murakami et T. Shingyouji, SEPARATION AND ANALYSIS OF DIFFUSION AND GENERATION COMPONENTS OF PN JUNCTION LEAKAGE CURRENT IN VARIOUS SILICON-WAFERS, Journal of applied physics, 75(7), 1994, pp. 3548-3552
Authors:
MURAKAMI Y
SHIOTA T
SHINGYOUJI T
ABE H
Citation: Y. Murakami et al., EFFECT OF OXIDATION AMBIENT ON THE DIELECTRIC-BREAKDOWN CHARACTERISTICS OF THERMAL OXIDE-FILMS OF SILICON, Journal of applied physics, 75(10), 1994, pp. 5302-5305
Authors:
MURAKAMI Y
SHINGYOUJI T
Citation: Y. Murakami et T. Shingyouji, TRANSIENT COMPONENT OF LEAKAGE CURRENT IN SILICON PN JUNCTIONS, Applied physics letters, 65(20), 1994, pp. 2591-2593
Authors:
SATOH Y
MURAKAMI Y
FURUYA H
SHINGYOUJI T
Citation: Y. Satoh et al., EFFECT OF BULK MICRODEFECTS INDUCED IN HEAT-TREATED CZOCHRALSKI SILICON ON DIELECTRIC-BREAKDOWN OF THERMAL SIO2-FILMS, Applied physics letters, 64(3), 1994, pp. 303-305
Authors:
ISHIGAMI S
KAWAI Y
FURUYA H
SHINGYOUJI T
SAITOH Y
Citation: S. Ishigami et al., EFFECT OF INTERSTITIAL OXYGEN ON FORMATION OF AMORPHOUS SIOX LAYER INDIRECTLY BONDED CZOCHRALSKI SILICON-WAFERS, JPN J A P 1, 32(12A), 1993, pp. 5463-5467
Authors:
FURUKAWA J
FURUYA H
SHINGYOUJI T
Citation: J. Furukawa et al., DETECTION OF BULK MICRODEFECTS UNDERNEATH THE SURFACE OF SI WAFER USING INFRARED LIGHT-SCATTERING TOMOGRAPHY, JPN J A P 1, 32(11A), 1993, pp. 5178-5179
Authors:
ISHIGAMI S
KAWAI Y
FURUYA H
SHINGYOUJI T
Citation: S. Ishigami et al., STRESS-ENHANCED DIFFUSION OF BORON AT THE INTERFACE OF A DIRECTLY BONDED SILICON-WAFER, JPN J A P 1, 32(10), 1993, pp. 4408-4412
Authors:
TAKAHASHI I
KOBAYASHI H
RYUTA J
KISHIMOTO M
SHINGYOUJI T
Citation: I. Takahashi et al., TIME-DEPENDENT VARIATION OF COMPOSITION OF SCL SOLUTION, JPN J A P 2, 32(9A), 1993, pp. 120001183-120001185
Authors:
OKADA C
TAKAHASHI I
KOBAYASHI H
RYUTA J
SHINGYOUJI T
Citation: C. Okada et al., MEASUREMENT OF ORGANIC-MATTER ON SI WAFER BY THERMAL-DESORPTION SPECTROSCOPY, JPN J A P 2, 32(9A), 1993, pp. 120001186-120001188
Authors:
OKADA C
KOBAYASHI H
TAKAHASHI I
RYUTA J
SHINGYOUJI T
Citation: C. Okada et al., GROWTH OF NATIVE-OXIDE AND ACCUMULATION OF ORGANIC-MATTER ON BARE SI WAFER IN AIR, JPN J A P 2, 32(8A), 1993, pp. 120001031-120001033
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