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Results:
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Results: 15
Authors:
SHIRAKASHI J
MATSUMOTO K
MIURA N
KONAGAI M
Citation: J. Shirakashi et al., ROOM-TEMPERATURE NB-BASED SINGLE-ELECTRON TRANSISTORS, JPN J A P 1, 37(3B), 1998, pp. 1594-1598
Authors:
MIURA N
NUMAGUCHI T
YAMADA A
KONAGAI M
SHIRAKASHI J
Citation: N. Miura et al., ROOM-TEMPERATURE OPERATION OF AMORPHOUS CARBON-BASED SINGLE-ELECTRON TRANSISTORS FABRICATED BY BEAM-INDUCED DEPOSITION TECHNIQUES, JPN J A P 2, 37(4A), 1998, pp. 423
Authors:
SHIRAKASHI J
MATSUMOTO K
MIURA N
KONAGAI M
Citation: J. Shirakashi et al., 298 K OPERATION OF NB NB OXIDE-BASED SINGLE-ELECTRON TRANSISTORS WITHREDUCED-SIZE OF TUNNEL-JUNCTIONS BY THERMAL-OXIDATION/, Journal of applied physics, 83(10), 1998, pp. 5567-5569
Authors:
SHIRAKASHI J
MATSUMOTO K
MIURA N
KONAGAI M
Citation: J. Shirakashi et al., SINGLE-ELECTRON CHARGING EFFECTS IN NB NB OXIDE-BASED SINGLE-ELECTRONTRANSISTORS AT ROOM-TEMPERATURE/, Applied physics letters, 72(15), 1998, pp. 1893-1895
Authors:
SHIRAKASHI J
MATSUMOTO K
MIURA N
KONAGAI M
Citation: J. Shirakashi et al., SINGLE-ELECTRON TRANSISTORS (SETS) WITH NB NB OXIDE SYSTEM FABRICATEDBY ATOMIC-FORCE MICROSCOPE (AFM) NANO-OXIDATION PROCESS/, JPN J A P 2, 36(9AB), 1997, pp. 1257-1260
Authors:
SHIRAKASHI J
MATSUMOTO K
MIURA N
KONAGAI M
Citation: J. Shirakashi et al., NB NB OXIDE-BASED PLANAR-TYPE METAL/INSULATOR/METAL (MIM) DIODES FABRICATED BY ATOMIC-FORCE MICROSCOPE (AFM) NANO-OXIDATION PROCESS/, JPN J A P 2, 36(8B), 1997, pp. 1120-1122
Authors:
MIURA N
NUMAGUCHI T
YAMADA A
KONAGAI M
SHIRAKASHI J
Citation: N. Miura et al., SINGLE-ELECTRON TUNNELING THROUGH AMORPHOUS-CARBON DOTS ARRAY, JPN J A P 2, 36(12A), 1997, pp. 1619-1621
Authors:
MIURA N
ISHII H
SHIRAKASHI J
YAMADA A
KONAGAI M
Citation: N. Miura et al., ELECTRON-BEAM-INDUCED DEPOSITION OF CARBONACEOUS MICROSTRUCTURES USING SCANNING ELECTRON-MICROSCOPY, Applied surface science, 114, 1997, pp. 269-273
Authors:
SHIRAKASHI J
ISHII M
MATSUMOTO K
MIURA N
KONAGAI M
Citation: J. Shirakashi et al., SURFACE MODIFICATION OF NIOBIUM (NB) BY ATOMIC-FORCE MICROSCOPE (AFM)NANO-OXIDATION PROCESS, JPN J A P 2, 35(11B), 1996, pp. 1524-1527
Authors:
SHIRAKASHI J
AZUMA T
FUKUCHI F
KONAGAI M
TAKAHASHI K
Citation: J. Shirakashi et al., INGAP GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH AN ULTRA-HIGH CARBON-DOPED BASE (P=1.5X10(21) CM(-3))/, JPN J A P 1, 34(2B), 1995, pp. 1204-1207
Authors:
SHIRAKASHI J
AZUMI T
FUKUCHI F
KONAGAI M
TAKAHASHI K
Citation: J. Shirakashi et al., CHARACTERIZATION OF HEAVILY CARBON-DOPED GAAS WITH A HOLE CONCENTRATION OF THE ORDER OF 10(21) CM(-3) GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY AND ITS APPLICATION TO INGAP GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS/, Journal of crystal growth, 150(1-4), 1995, pp. 585-590
Authors:
NAGAO K
SHIRAKASHI J
KONAGAI M
TAKAHASHI K
Citation: K. Nagao et al., LOW-TEMPERATURE GROWTH OF HEAVILY CARBON-DOPED GAAS BY METALORGANIC MOLECULAR-BEAM EPITAXY WITH ELEMENTAL GALLIUM, JPN J A P 1, 33(11), 1994, pp. 6090-6094
Authors:
SHIRAKASHI J
YOSHIOKA RT
AZUMA T
FUKUCHI F
KONAGAI M
TAKAHASHI K
Citation: J. Shirakashi et al., METALORGANIC MOLECULAR-BEAM EPITAXIAL-GROWTH OF INP AND INGAP WITH TERTIARYBUTYLPHOSPHINE FOR THE APPLICATION OF CARBON-DOPED BASE HETEROJUNCTION BIPOLAR-TRANSISTORS, Journal of crystal growth, 145(1-4), 1994, pp. 935-940
Authors:
SHIRAKASHI J
YOSHIOKA RT
MIYANO A
KONAGAI M
TAKAHASHI K
Citation: J. Shirakashi et al., EFFECT OF THE ADDITION OF AN ELEMENTAL GA FLUX ON THE METALORGANIC MOLECULAR-BEAM EPITAXIAL-GROWTH OF HEAVILY CARBON-DOPED INGAAS, Journal of crystal growth, 136(1-4), 1994, pp. 186-190
Authors:
NOZAKI S
TAKAHASHI K
SHIRAHAMA M
NAGAO K
SHIRAKASHI J
TOKUMITSU E
KONAGAI M
Citation: S. Nozaki et al., STUDY ON THERMAL-STABILITY OF CARBON-DOPED GAAS USING NOVEL METALORGANIC MOLECULAR-BEAM EPITAXIAL STRUCTURES, Applied physics letters, 62(16), 1993, pp. 1913-1915
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1-15
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