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Results: 1-25 | 26-50 | 51-69
Results: 26-50/69
GAN BASED HETEROSTRUCTURE FOR HIGH-POWER DEVICES
Authors: KHAN MA CHEN Q SHUR MS DERMOTT BT HIGGINS JA BURM J SCHAFF WJ EASTMAN LF
Citation: Ma. Khan et al., GAN BASED HETEROSTRUCTURE FOR HIGH-POWER DEVICES, Solid-state electronics, 41(10), 1997, pp. 1555-1559
MONTE-CARLO CALCULATION OF VELOCITY-FIELD CHARACTERISTICS OF WURTZITEGAN
Authors: BHAPKAR UV SHUR MS
Citation: Uv. Bhapkar et Ms. Shur, MONTE-CARLO CALCULATION OF VELOCITY-FIELD CHARACTERISTICS OF WURTZITEGAN, Journal of applied physics, 82(4), 1997, pp. 1649-1655
ELASTIC STRAIN RELAXATION AND PIEZOEFFECT IN GAN-ALN, GAN-ALGAN AND GAN-INGAN SUPERLATTICES
Authors: BYKHOVSKI AD GELMONT BL SHUR MS
Citation: Ad. Bykhovski et al., ELASTIC STRAIN RELAXATION AND PIEZOEFFECT IN GAN-ALN, GAN-ALGAN AND GAN-INGAN SUPERLATTICES, Journal of applied physics, 81(9), 1997, pp. 6332-6338
AIM-SPICE IN THE VAN
Authors: SHUR MS
Citation: Ms. Shur, AIM-SPICE IN THE VAN, IEEE spectrum, 34(2), 1997, pp. 8-8
MICROWAVE PERFORMANCE OF 0.25 MU-M DOPED CHANNEL GAN ALGAN HETEROSTRUCTURE FIELD-EFFECT TRANSISTOR AT ELEVATED-TEMPERATURES/
Authors: CHEN Q GASKA R KHAN MA SHUR MS PING A ADESIDA I BURM J SCHAFF WJ EASTMAN LF
Citation: Q. Chen et al., MICROWAVE PERFORMANCE OF 0.25 MU-M DOPED CHANNEL GAN ALGAN HETEROSTRUCTURE FIELD-EFFECT TRANSISTOR AT ELEVATED-TEMPERATURES/, Electronics Letters, 33(7), 1997, pp. 637-639
ALGAN-GAN HETEROSTRUCTURE FETS WITH OFFSET GATE DESIGN
Authors: GASKA R CHEN Q YANG J KHAN MA SHUR MS PING A ADESIDA I
Citation: R. Gaska et al., ALGAN-GAN HETEROSTRUCTURE FETS WITH OFFSET GATE DESIGN, Electronics Letters, 33(14), 1997, pp. 1255-1257
SPICE MODELS FOR AMORPHOUS-SILICON AND POLYSILICON THIN-FILM TRANSISTORS
Authors: SHUR MS SLADE HC JACUNSKI MD OWUSU AA YTTERDAL T
Citation: Ms. Shur et al., SPICE MODELS FOR AMORPHOUS-SILICON AND POLYSILICON THIN-FILM TRANSISTORS, Journal of the Electrochemical Society, 144(8), 1997, pp. 2833-2839
PIEZORESISTIVE EFFECT IN GAN-ALN-GAN STRUCTURES
Authors: GASKA R YANG JW BYKHOVSKI AD SHUR MS KAMINSKII VV SOLOVIOV S
Citation: R. Gaska et al., PIEZORESISTIVE EFFECT IN GAN-ALN-GAN STRUCTURES, Applied physics letters, 71(26), 1997, pp. 3817-3819
PIEZOEFFECT AND GATE CURRENT IN ALGAN GAN HIGH-ELECTRON-MOBILITY TRANSISTORS/
Authors: GASKA R YANG JW OSINSKY A BYKHOVSKI AD SHUR MS
Citation: R. Gaska et al., PIEZOEFFECT AND GATE CURRENT IN ALGAN GAN HIGH-ELECTRON-MOBILITY TRANSISTORS/, Applied physics letters, 71(25), 1997, pp. 3673-3675
ENHANCEMENT OF SCHOTTKY-BARRIER HEIGHT IN HETERODIMENSIONAL METAL-SEMICONDUCTOR CONTACTS
Authors: YTTERDAL T SHUR MS HURT M PEATMAN WCB
Citation: T. Ytterdal et al., ENHANCEMENT OF SCHOTTKY-BARRIER HEIGHT IN HETERODIMENSIONAL METAL-SEMICONDUCTOR CONTACTS, Applied physics letters, 70(4), 1997, pp. 441-442
QUANTUM SHIFT OF BAND-EDGE STIMULATED-EMISSION IN INGAN-GAN MULTIPLE-QUANTUM-WELL LIGHT-EMITTING-DIODES
Authors: SUN CJ ANWAR MZ CHEN Q YANG JW KHAN MA SHUR MS BYKHOVSKI AD LILIENTALWEBER Z KISIELOWSKI C SMITH M LIN JY XIANG HX
Citation: Cj. Sun et al., QUANTUM SHIFT OF BAND-EDGE STIMULATED-EMISSION IN INGAN-GAN MULTIPLE-QUANTUM-WELL LIGHT-EMITTING-DIODES, Applied physics letters, 70(22), 1997, pp. 2978-2980
COMPARISON OF HIGH-FIELD ELECTRON-TRANSPORT IN GAN AND GAAS
Authors: FOUTZ BE EASTMAN LF BHAPKAR UV SHUR MS
Citation: Be. Foutz et al., COMPARISON OF HIGH-FIELD ELECTRON-TRANSPORT IN GAN AND GAAS, Applied physics letters, 70(21), 1997, pp. 2849-2851
CYCLOTRON-RESONANCE AND QUANTUM HALL-EFFECT STUDIES OF THE 2-DIMENSIONAL ELECTRON-GAS CONFINED AT THE GAN ALGAN INTERFACE/
Authors: KNAP W CONTRERAS S ALAUSE H SKIERBISZEWSKI C CAMASSEL J DYAKONOV M ROBERT JL YANG J CHEN Q KHAN MA SADOWSKI ML HUANT S YANG FH GOIRAN M LEOTIN J SHUR MS
Citation: W. Knap et al., CYCLOTRON-RESONANCE AND QUANTUM HALL-EFFECT STUDIES OF THE 2-DIMENSIONAL ELECTRON-GAS CONFINED AT THE GAN ALGAN INTERFACE/, Applied physics letters, 70(16), 1997, pp. 2123-2125
MICROWAVE OPERATION OF GAN ALGAN-DOPED CHANNEL HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS/
Authors: KHAN MA CHEN Q YANG JW SHUR MS DERMOTT BT HIGGINS JA
Citation: Ma. Khan et al., MICROWAVE OPERATION OF GAN ALGAN-DOPED CHANNEL HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS/, IEEE electron device letters, 17(7), 1996, pp. 325-327
CW OPERATION OF SHORT-CHANNEL GAN ALGAN DOPED CHANNEL HETEROSTRUCTUREFIELD-EFFECT TRANSISTORS AT 10 GHZ AND 15 GHZ/
Authors: KHAN MA CHEN Q SHUR MS DERMOTT BT HIGGINS JA BURM J SCHAFF WJ EASTMAN LF
Citation: Ma. Khan et al., CW OPERATION OF SHORT-CHANNEL GAN ALGAN DOPED CHANNEL HETEROSTRUCTUREFIELD-EFFECT TRANSISTORS AT 10 GHZ AND 15 GHZ/, IEEE electron device letters, 17(12), 1996, pp. 584-585
THRESHOLD VOLTAGE, FIELD-EFFECT MOBILITY, AND GATE-TO-CHANNEL CAPACITANCE IN POLYSILICON TFTS
Authors: JACUNSKI MD SHUR MS HACK M
Citation: Md. Jacunski et al., THRESHOLD VOLTAGE, FIELD-EFFECT MOBILITY, AND GATE-TO-CHANNEL CAPACITANCE IN POLYSILICON TFTS, I.E.E.E. transactions on electron devices, 43(9), 1996, pp. 1433-1440
ENHANCED CAD MODEL FOR GATE LEAKAGE CURRENT IN HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS
Authors: LEE KY LUND B YTTERDAL T ROBERTSON P MARTINEZ EJ ROBERTSON J SHUR MS
Citation: Ky. Lee et al., ENHANCED CAD MODEL FOR GATE LEAKAGE CURRENT IN HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS, I.E.E.E. transactions on electron devices, 43(6), 1996, pp. 845-851
QUASI-3-DIMENSIONAL MODELING OF A NOVEL 2-D MESFET
Authors: HURT MJ SHUR MS PEATMAN WCB RABKIN PB
Citation: Mj. Hurt et al., QUASI-3-DIMENSIONAL MODELING OF A NOVEL 2-D MESFET, I.E.E.E. transactions on electron devices, 43(2), 1996, pp. 358-359
PRESENT AND FUTURE-TRENDS IN DEVICE SCIENCE AND TECHNOLOGIES - PREFACE
Authors: SHUR MS SZE SM XU JM
Citation: Ms. Shur et al., PRESENT AND FUTURE-TRENDS IN DEVICE SCIENCE AND TECHNOLOGIES - PREFACE, I.E.E.E. transactions on electron devices, 43(10), 1996, pp. 1618-1620
PLASMA-WAVE ELECTRONICS - NOVEL TERAHERTZ DEVICES USING 2-DIMENSIONALELECTRON FLUID
Authors: DYAKONOV MI SHUR MS
Citation: Mi. Dyakonov et Ms. Shur, PLASMA-WAVE ELECTRONICS - NOVEL TERAHERTZ DEVICES USING 2-DIMENSIONALELECTRON FLUID, I.E.E.E. transactions on electron devices, 43(10), 1996, pp. 1640-1645
SHORT-CHANNEL GAN ALGAN DOPED CHANNEL HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS WITH 36.1 CUTOFF FREQUENCY/
Authors: KHAN MA CHEN Q SHUR MS DERMOTT BT HIGGINS JA BURM J SCHAFF W EASTMAN LF
Citation: Ma. Khan et al., SHORT-CHANNEL GAN ALGAN DOPED CHANNEL HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS WITH 36.1 CUTOFF FREQUENCY/, Electronics Letters, 32(4), 1996, pp. 357-358
DETECTION OF MICROWAVE-RADIATION BY ELECTRONIC FLUID IN HIGH-ELECTRON-MOBILITY TRANSISTORS
Authors: WEIKLE R LU JQ SHUR MS DYAKONOV MI
Citation: R. Weikle et al., DETECTION OF MICROWAVE-RADIATION BY ELECTRONIC FLUID IN HIGH-ELECTRON-MOBILITY TRANSISTORS, Electronics Letters, 32(23), 1996, pp. 2148-2149
HIGH TRANSCONDUCTANCE HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS BASED ON ALGAN GAN/
Authors: CHEN Q KHAN MA YANG JW SUN CJ SHUR MS PARK H
Citation: Q. Chen et al., HIGH TRANSCONDUCTANCE HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS BASED ON ALGAN GAN/, Applied physics letters, 69(6), 1996, pp. 794-796
PYROELECTRICITY IN GALLIUM NITRIDE THIN-FILMS
Authors: BYKHOVSKI AD KAMINSKI VV SHUR MS CHEN QC KHAN MA
Citation: Ad. Bykhovski et al., PYROELECTRICITY IN GALLIUM NITRIDE THIN-FILMS, Applied physics letters, 69(21), 1996, pp. 3254-3256
BELOW THRESHOLD CONDUCTION IN A-SI-H THIN-FILM TRANSISTORS WITH AND WITHOUT A SILICON-NITRIDE PASSIVATING LAYER
Authors: SLADE HC SHUR MS DEANE SC HACK M
Citation: Hc. Slade et al., BELOW THRESHOLD CONDUCTION IN A-SI-H THIN-FILM TRANSISTORS WITH AND WITHOUT A SILICON-NITRIDE PASSIVATING LAYER, Applied physics letters, 69(17), 1996, pp. 2560-2562
Risultati: 1-25 | 26-50 | 51-69