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Results: 1-7 |
Results: 7
SIMULATION OF SOI DEVICES AND CIRCUITS USING BSIM3SOI
Authors: SINITSKY D TANG S JANGITY A ASSADERAGHI F SHAHIDI G HU CM
Citation: D. Sinitsky et al., SIMULATION OF SOI DEVICES AND CIRCUITS USING BSIM3SOI, IEEE electron device letters, 19(9), 1998, pp. 323-325
AC OUTPUT CONDUCTANCE OF SOI MOSFETS AND IMPACT ON ANALOG APPLICATIONS
Authors: SINITSKY D TU R LIANG CL CHAN MS BOKOR J HU CM
Citation: D. Sinitsky et al., AC OUTPUT CONDUCTANCE OF SOI MOSFETS AND IMPACT ON ANALOG APPLICATIONS, IEEE electron device letters, 18(2), 1997, pp. 36-38
HIGH-FIELD HOLE VELOCITY AND VELOCITY OVERSHOOT IN SILICON INVERSION-LAYERS
Authors: SINITSKY D ASSADERAGHI F HU CM BOKOR J
Citation: D. Sinitsky et al., HIGH-FIELD HOLE VELOCITY AND VELOCITY OVERSHOOT IN SILICON INVERSION-LAYERS, IEEE electron device letters, 18(2), 1997, pp. 54-56
VELOCITY OVERSHOOT OF ELECTRONS AND HOLES IN SI INVERSION-LAYERS
Authors: SINITSKY D ASSADERAGHI F ORSHANSKY M BOKOR J HU C
Citation: D. Sinitsky et al., VELOCITY OVERSHOOT OF ELECTRONS AND HOLES IN SI INVERSION-LAYERS, Solid-state electronics, 41(8), 1997, pp. 1119-1125
HIGH-FIELD TRANSPORT OF INVERSION-LAYER ELECTRONS AND HOLES INCLUDINGVELOCITY OVERSHOOT
Authors: ASSADERAGHI F SINITSKY D BOKOR J KO PK GAW H HU CM
Citation: F. Assaderaghi et al., HIGH-FIELD TRANSPORT OF INVERSION-LAYER ELECTRONS AND HOLES INCLUDINGVELOCITY OVERSHOOT, I.E.E.E. transactions on electron devices, 44(4), 1997, pp. 664-671
DYNAMIC THRESHOLD-VOLTAGE MOSFET (DTMOS) FOR ULTRA-LOW VOLTAGE VLSI
Authors: ASSADERAGHI F SINITSKY D PARKE SA BOKOR J KO PK HU CM
Citation: F. Assaderaghi et al., DYNAMIC THRESHOLD-VOLTAGE MOSFET (DTMOS) FOR ULTRA-LOW VOLTAGE VLSI, I.E.E.E. transactions on electron devices, 44(3), 1997, pp. 414-422
A DYNAMIC THRESHOLD VOLTAGE MOSFET (DTMOS) FOR VERY-LOW VOLTAGE OPERATION
Authors: ASSADERAGHI F PARKE S SINITSKY D BOKOR J KO PK HU CM
Citation: F. Assaderaghi et al., A DYNAMIC THRESHOLD VOLTAGE MOSFET (DTMOS) FOR VERY-LOW VOLTAGE OPERATION, IEEE electron device letters, 15(12), 1994, pp. 510-512
Risultati: 1-7 |