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Results: 1-12 |
Results: 12
HIGH-CONCENTRATION DIFFUSIVITY AND CLUSTERING OF ARSENIC AND PHOSPHORUS IN SILICON
Authors: SOLMI S NOBILI D
Citation: S. Solmi et D. Nobili, HIGH-CONCENTRATION DIFFUSIVITY AND CLUSTERING OF ARSENIC AND PHOSPHORUS IN SILICON, Journal of applied physics, 83(5), 1998, pp. 2484-2490
COUNTERDOPED VERY SHALLOW P(+) N JUNCTIONS OBTAINED BY B AND SB IMPLANTATION AND CODIFFUSION IN SI/
Authors: SOLMI S
Citation: S. Solmi, COUNTERDOPED VERY SHALLOW P(+) N JUNCTIONS OBTAINED BY B AND SB IMPLANTATION AND CODIFFUSION IN SI/, Journal of applied physics, 83(3), 1998, pp. 1742-1747
AN EVENING IN MILAN WITH GRAMSCI,ANTONIO, AUTUMN 1925
Authors: SOLMI S
Citation: S. Solmi, AN EVENING IN MILAN WITH GRAMSCI,ANTONIO, AUTUMN 1925, Belfagor, 52(4), 1997, pp. 395-396
DOPANT AND CARRIER CONCENTRATION IN SI IN EQUILIBRIUM WITH MONOCLINICSIP PRECIPITATES
Authors: SOLMI S PARISINI A ANGELUCCI R ARMIGLIATO A NOBILI D MORO L
Citation: S. Solmi et al., DOPANT AND CARRIER CONCENTRATION IN SI IN EQUILIBRIUM WITH MONOCLINICSIP PRECIPITATES, Physical review. B, Condensed matter, 53(12), 1996, pp. 7836-7841
HIGH-TEMPERATURE ANNEALINGS OF SB AND SB B HEAVILY IMPLANTED SILICON-WAFERS STUDIED BY NEAR GRAZING-INCIDENCE FLUORESCENCE EXTENDED X-RAY-ABSORPTION FINE-STRUCTURE/
Authors: REVENANTBRIZARD C REGNARD JR SOLMI S ARMIGLIATO A VALMORRI S CELLINI C ROMANATO F
Citation: C. Revenantbrizard et al., HIGH-TEMPERATURE ANNEALINGS OF SB AND SB B HEAVILY IMPLANTED SILICON-WAFERS STUDIED BY NEAR GRAZING-INCIDENCE FLUORESCENCE EXTENDED X-RAY-ABSORPTION FINE-STRUCTURE/, Journal of applied physics, 79(12), 1996, pp. 9037-9042
THE STORM TECHNOLOGY CAD-SYSTEM
Authors: LORENZ J HILL C JAOUEN H LOMBARDI C LYDEN C DEMEYER K PELKA J PONCET A RUDAN M SOLMI S
Citation: J. Lorenz et al., THE STORM TECHNOLOGY CAD-SYSTEM, Microelectronics, 26(2-3), 1995, pp. 113-135
CODIFFUSION OF ARSENIC AND BORON-IMPLANTED IN SILICON
Authors: SOLMI S VALMORRI S CANTERI R
Citation: S. Solmi et al., CODIFFUSION OF ARSENIC AND BORON-IMPLANTED IN SILICON, Journal of applied physics, 77(6), 1995, pp. 2400-2406
RECENT FINDINGS IN SILICON DOPING WITH PHOSPHORUS
Authors: NOBILI D SOLMI S PARISINI A ARMIGLIATO A MORO L
Citation: D. Nobili et al., RECENT FINDINGS IN SILICON DOPING WITH PHOSPHORUS, Renewable energy, 5(1-4), 1994, pp. 250-251
PRECIPITATION, AGGREGATION, AND DIFFUSION IN HEAVILY ARSENIC-DOPED SILICON
Authors: NOBILI D SOLMI S PARISINI A DERDOUR M ARMIGLIATO A MORO L
Citation: D. Nobili et al., PRECIPITATION, AGGREGATION, AND DIFFUSION IN HEAVILY ARSENIC-DOPED SILICON, Physical review. B, Condensed matter, 49(4), 1994, pp. 2477-2483
A FUNDAMENTAL EXPERIMENT + DAUMAL,RENE WO RKS
Authors: SOLMI S
Citation: S. Solmi, A FUNDAMENTAL EXPERIMENT + DAUMAL,RENE WO RKS, Europe-Revue littéraire mensuelle, 72(782-83), 1994, pp. 48-63
CODIFFUSION OF ARSENIC AND PHOSPHORUS IMPLANTED IN SILICON
Authors: SOLMI S MACCAGNANI P CANTERI R
Citation: S. Solmi et al., CODIFFUSION OF ARSENIC AND PHOSPHORUS IMPLANTED IN SILICON, Journal of applied physics, 74(8), 1993, pp. 5005-5012
HIGH-TEMPERATURE THERMAL EVOLUTION OF SIAS PRECIPITATES IN SILICON
Authors: PARISINI A NOBILI D ARMIGLIATO A DERDOUR M MORO L SOLMI S
Citation: A. Parisini et al., HIGH-TEMPERATURE THERMAL EVOLUTION OF SIAS PRECIPITATES IN SILICON, Applied physics. A, Solids and surfaces, 54(3), 1992, pp. 221-224
Risultati: 1-12 |