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Results: 51-75/98
Authors:
TAN WC
INKSON JC
SRIVASTAVA GP
Citation: Wc. Tan et al., MICROSCOPIC CALCULATION OF VALENCE-BAND STATES IN SEMICONDUCTOR STRUCTURES IN THE PRESENCE OF A MAGNETIC-FIELD, Physical review. B, Condensed matter, 54(20), 1996, pp. 14623-14632
Authors:
TUTUNCU HM
SRIVASTAVA GP
Citation: Hm. Tutuncu et Gp. Srivastava, SURFACE PHONONS ON INP(110) WITH THE ADIABATIC BOND-CHARGE MODEL, Physical review. B, Condensed matter, 53(23), 1996, pp. 15675-15681
Authors:
SRIVASTAVA GP
JENKINS SJ
Citation: Gp. Srivastava et Sj. Jenkins, ATOMIC GEOMETRY AND BONDING ON THE GAAS(001)-BETA-2(2X4) SURFACE FROMAB-INITIO PSEUDOPOTENTIAL CALCULATIONS, Physical review. B, Condensed matter, 53(19), 1996, pp. 12589-12592
Authors:
SCHMIDT WG
BECHSTEDT F
SRIVASTAVA GP
Citation: Wg. Schmidt et al., PHONONS AT III-V (110) SURFACES, Surface science, 352, 1996, pp. 83-88
Authors:
JENKINS SJ
SRIVASTAVA GP
Citation: Sj. Jenkins et Gp. Srivastava, BONDING AND STRUCTURE OF THE SI(001)(2X1)-SB SURFACE, Surface science, 352, 1996, pp. 411-415
Authors:
SRIVASTAVA GP
JENKINS SJ
Citation: Gp. Srivastava et Sj. Jenkins, THEORETICAL-STUDIES OF GAAS(001)-GE(2X1) AND (1X2) STRUCTURES, Surface science, 352, 1996, pp. 416-419
Authors:
JENKINS SJ
SRIVASTAVA GP
INKSON JC
Citation: Sj. Jenkins et al., DENSITY-FUNCTIONAL AND QUASI-PARTICLE CALCULATIONS ON THE INP(110) SURFACE, Surface science, 352, 1996, pp. 776-780
Authors:
KUANR AV
BANSAL SK
SRIVASTAVA GP
Citation: Av. Kuanr et al., LASER-INDUCED DAMAGE IN INSB AT 1.06 MU-M WAVELENGTH - A COMPARATIVE-STUDY WITH GE, SI AND GAAS, Optics and Laser Technology, 28(5), 1996, pp. 345-353
Authors:
KUANR AV
BANSAL SK
SRIVASTAVA GP
Citation: Av. Kuanr et al., LASER-INDUCED DAMAGE IN GAAS AT 1.06 MU-M WAVELENGTH - SURFACE EFFECTS, Optics and Laser Technology, 28(1), 1996, pp. 25-34
Authors:
IKONIC Z
SRIVASTAVA GP
INKSON JC
Citation: Z. Ikonic et al., ELECTRONIC-PROPERTIES OF PBS(111) TWIN BOUNDARIES AND TWINNING SUPERLATTICES, Superlattices and microstructures, 17(4), 1995, pp. 393-396
Authors:
SRIVASTAVA GP
SRIVASTAVA VC
Citation: Gp. Srivastava et Vc. Srivastava, CONTRIBUTION OF PRODUCTION FACTORS IN GROWTH, YIELD AND ECONOMICS OF BLACKGRAM (PHASEOLUS-MUNGO), Indian Journal of Agronomy, 40(1), 1995, pp. 64-66
Authors:
SRIVASTAVA GP
SRIVASTAV M
TYAGI GS
TANDON RP",SHAHNAWAZ
Citation: Gp. Srivastava et al., MAGNETIC-RELAXATION IN MN-DOPED BARIUM NANOTITANATE - A MICROWAVE DIELECTRIC RESONATOR MATERIAL, Journal of materials science letters, 14(19), 1995, pp. 1397-1399
Authors:
IKONIC Z
SRIVASTAVA GP
INKSON JC
Citation: Z. Ikonic et al., DIRECT OPTICAL-TRANSITIONS IN INDIRECT SEMICONDUCTORS - THE CASE OF GE TWINNING SUPERLATTICES, Physical review. B, Condensed matter, 52(3), 1995, pp. 1474-1476
Authors:
SCHMIDT WG
BECHSTEDT F
SRIVASTAVA GP
Citation: Wg. Schmidt et al., III-V(110) SURFACE DYNAMICS FROM AN AB-INITIO FROZEN-PHONON APPROACH, Physical review. B, Condensed matter, 52(3), 1995, pp. 2001-2007
Authors:
IKONIC Z
SRIVASTAVA GP
INKSON JC
Citation: Z. Ikonic et al., ELECTRONIC-PROPERTIES OF (111) TWIN BOUNDARIES AND TWINNING SUPERLATTICES IN LEAD SULFIDE, Physical review. B, Condensed matter, 52(19), 1995, pp. 13734-13737
Authors:
IKONIC Z
SRIVASTAVA GP
INKSON JC
Citation: Z. Ikonic et al., OPTICAL-PROPERTIES OF TWINNING SUPERLATTICES IN DIAMOND-TYPE AND ZINCBLENDE-TYPE SEMICONDUCTORS, Physical review. B, Condensed matter, 52(19), 1995, pp. 14078-14085
Authors:
UMERSKI A
SRIVASTAVA GP
Citation: A. Umerski et Gp. Srivastava, GEOMETRY AND ELECTRONIC BAND-STRUCTURE OF AN ORDERED MONOLAYER DEPOSITION OF BI ON III-V(110) SEMICONDUCTOR SURFACES (VOL 51, PG 2334, 1995), Physical review. B, Condensed matter, 52(15), 1995, pp. 11519-11519
Authors:
IKONIC Z
SRIVASTAVA GP
INKSON JC
Citation: Z. Ikonic et al., ELECTRONIC-STRUCTURE OF (GAAS)(M)(ALAS)(N) SUPERLATTICES GROWN IN THE[211] DIRECTION, Physical review. B, Condensed matter, 52(11), 1995, pp. 7830-7833
Authors:
UMERSKI A
SRIVASTAVA GP
Citation: A. Umerski et Gp. Srivastava, GEOMETRY AND ELECTRONIC BAND-STRUCTURE OF AN ORDERED MONOLAYER DEPOSITION OF BI ON III-V(110) SEMICONDUCTOR SURFACES, Physical review. B, Condensed matter, 51(4), 1995, pp. 2334-2346
Authors:
JENKINS SJ
SRIVASTAVA GP
INKSON JC
Citation: Sj. Jenkins et al., DENSITY-FUNCTIONAL AND QUASI-PARTICLE CALCULATIONS ON THE GAP(110) SURFACE, Surface science, 333, 1995, pp. 1238-1243
Authors:
SCHMIDT WG
SRIVASTAVA GP
Citation: Wg. Schmidt et Gp. Srivastava, III-V(110) SB(1 ML) - STRUCTURAL AND DYNAMICAL PROPERTIES/, Surface science, 333, 1995, pp. 540-545
Authors:
SRIVASTAVA GP
UMERSKI A
Citation: Gp. Srivastava et A. Umerski, GEOMETRY AND ELECTRONIC-STRUCTURE OF SELENIUM-TREATED INP(110), Surface science, 333, 1995, pp. 590-593
Authors:
JENKINS SJ
SRIVASTAVA GP
INKSON JC
Citation: Sj. Jenkins et al., AN AB-INITIO PSEUDOPOTENTIAL CALCULATION OF GROUND-STATE AND EXCITED-STATE PROPERTIES OF GALLIUM NITRIDE, Journal of physics. Condensed matter, 6(42), 1994, pp. 8781-8794
Authors:
NARAYAN V
SRIVASTAVA GP
INKSON JC
Citation: V. Narayan et al., FINITE-FIELDS AND INTERVALLEY SCATTERING IN A RESONANT-TUNNELING QUANTUM-WIRE AND DOT DOUBLE-BARRIER STRUCTURE USING A MULTIBAND MICROSCOPIC LAYER METHOD, Superlattices and microstructures, 16(4), 1994, pp. 403-412
Authors:
TAN WC
INKSON JC
SRIVASTAVA GP
Citation: Wc. Tan et al., A MICROSCOPIC STUDY OF LANDAU-LEVEL STATES IN QUANTUM WIRES, Semiconductor science and technology, 9(7), 1994, pp. 1305-1315