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Results:
1-15
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Results: 15
Authors:
DANILOV SN
VOROBJEV LE
KOCHEGAROV YV
STAFEEV VI
FIRSOV DA
Citation: Sn. Danilov et al., A TUNABLE LASER OF SUBMILLIMETER RANGE AND ITS APPLICATION, Laser physics, 7(2), 1997, pp. 369-374
Authors:
GOLOVIN SV
GORSHKOV AV
BOVINA LA
BOLTAR KO
STAFEEV VI
Citation: Sv. Golovin et al., PROPERTIES OF EPITAXIAL CDXHG1-XTE LAYERS GROWN FROM THE VAPOR-PHASE IN A QUASI-CLOSED SYSTEM, Journal of optical technology, 63(6), 1996, pp. 462-463
Authors:
BOVINA LA
BURLAKOV ID
ILIN YK
KLIMANOV EA
MANSVETOV NG
SOLYAKOV VN
STAFEEV VI
TIMOFEEV AA
Citation: La. Bovina et al., MULTIROW HGCDTE PHOTODETECTOR SYSTEMS FOR THE 3-5 AND 8-12-MU-M SPECTRAL RANGES, Journal of optical technology, 63(6), 1996, pp. 466-470
Authors:
BOVINA LA
BOLTAR KO
BURLAKOV ID
KLIMANOV EA
PATRASHIN AI
SAGINOV LD
STAFEEV VI
TIMOFEEV AA
Citation: La. Bovina et al., FOCAL ARRAYS BASED ON HGCDTE PHOTODIODES FOR THE 3-5 AND 8-12-MU-M SPECTRAL REGIONS, Journal of optical technology, 63(6), 1996, pp. 478-481
Authors:
GORSHKOV AV
BOVINA LA
STAFEEV VI
Citation: Av. Gorshkov et al., SYSTEMATIC FEATURES OF THE DIFFUSION OF IMPURITIES IN CD0.2HG0.8TE, Semiconductors, 30(7), 1996, pp. 629-634
Authors:
SHTURBIN AV
SHALYGIN VA
STAFEEV VI
Citation: Av. Shturbin et al., DETERMINATION OF THE DIFFUSION-RECOMBINATION PARAMETERS OF SEMICONDUCTORS BY A CONTACT-FREE METHOD, Semiconductors, 29(11), 1995, pp. 1064-1070
Authors:
VOROBEV LE
STAFEEV VI
FIRSOV DA
DEREZA TP
Citation: Le. Vorobev et al., DETERMINATION OF THE PARAMETERS OF SEMICONDUCTOR-MATERIALS AND PHOTODETECTORS USING AN INFRARED MODULATOR BASED ON HOT CHARGE-CARRIERS, Russian journal of nondestructive testing, 31(5), 1995, pp. 356-359
Authors:
STAFEEV VI
ANISIMOVA ID
Citation: Vi. Stafeev et Id. Anisimova, PHOTODIODES WITH SCHOTTKY BARRIERS BASED ON GAP,GAPXAS1-X AND GAAS FOR THE UV AND VISIBLE RANGES, Semiconductors, 28(3), 1994, pp. 281-284
Authors:
VOROBJEV LE
DANILOV SN
DONETSKY DV
FIRSOV DA
KOCHEGAROV YV
STAFEEV VI
Citation: Le. Vorobjev et al., AN INJECTIONLESS FIR LASER-BASED ON INTERBAND-TRANSITIONS OF HOT HOLES IN GERMANIUM, Semiconductor science and technology, 9(5), 1994, pp. 641-644
Authors:
FEDORTSOV AB
LETENKO DG
POLYAKOV AY
STAFEEV VI
VOROBYEV LE
Citation: Ab. Fedortsov et al., CONTACTLESS LOCAL DETERMINATION OF RECOMBINATION CENTER PARAMETERS INCD0.3HG0.7TE BY INFRARED-LASER INTERFEROMETRY, Semiconductor science and technology, 9(1), 1994, pp. 69-76
Authors:
ATFEROV ZI
BIRYULIN YF
FISTUL VI
GOLUBEV LV
MASTEROV VF
OKUNEVA LM
PEREL VI
POLYANSKAYA TA
POZHELA YK
SHARONOVA LV
STAFEEV VI
TSARENKOV BV
VUL AY
TYBULEWICZ A
Citation: Zi. Atferov et al., SHMARTSEV,YURII,VASILEVICH (1930-1993) - OBITUARY, Semiconductors, 27(2), 1993, pp. 107-108
Authors:
VOROBEV LE
DANILOV SN
DONETSKII DV
KOCHEGAROV YV
STAFEEV VI
FIRSOV DA
Citation: Le. Vorobev et al., NONINJECTION NARROW-BAND LASER EMITTING FAR-INFRARED RADIATION DUE TOHOT HOLES AND ITS USE IN IMPURITY BREAKDOWN INVESTIGATIONS, Semiconductors, 27(1), 1993, pp. 77-82
Authors:
VOROBEV LE
STAFEEV VI
FIRSOV DA
DEREZA TP
LOZHNIKOV VE
Citation: Le. Vorobev et al., CHECKING OF PARAMETERS OF SEMICONDUCTOR-MATERIALS AND PHOTO DETECTORSBY MODULATORS OF THEIR RADIATION ON HOT CHARGE-CARRIERS, Russian journal of nondestructive testing, 29(9), 1993, pp. 683-686
Authors:
VOROBJEV LE
DANILOV SN
DONETSKY DV
FIRSOV DA
KOCHEGAROV YV
STAFEEV VI
Citation: Le. Vorobjev et al., NARROW-BAND TUNABLE SUBMILLIMETER HOT HOLE INJECTIONLESS SEMICONDUCTOR-LASER AND ITS USE FOR CYCLOTRON-RESONANCE INVESTIGATION, Optical and quantum electronics, 25(10), 1993, pp. 705-721
Authors:
KHRYAPOV VT
PONOMARENKO VP
BUTKEVICH VG
TAUBKIN II
STAFEEV VI
POPOV SA
OSIPOV VV
Citation: Vt. Khryapov et al., THRESHOLD IR PHOTODETECTORS AND MATRICES, Soviet journal of optical technology, 59(12), 1992, pp. 780-788
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