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Results: 1-15 |
Results: 15
INASSB LIGHT-EMITTING-DIODES FOR THE DETECTION OF CO2 (LAMBDA=4.3-MU-M)
Authors: POPOV AA STEPANOV MV SHERSTNEV VV YAKOVLEV YP
Citation: Aa. Popov et al., INASSB LIGHT-EMITTING-DIODES FOR THE DETECTION OF CO2 (LAMBDA=4.3-MU-M), Technical physics letters, 24(8), 1998, pp. 596-598
INFLUENCE OF PUMPING UNIFORMITY ON CURRENT TUNING OF THE EMISSION WAVELENGTH OF INASSB INASSBP DIODE-LASERS/
Authors: DANILOVA TN EVSEENKO OI IMENKOV AN KOLCHANOVA NM STEPANOV MV SHERSTNEV VV YAKOVLEV YP
Citation: Tn. Danilova et al., INFLUENCE OF PUMPING UNIFORMITY ON CURRENT TUNING OF THE EMISSION WAVELENGTH OF INASSB INASSBP DIODE-LASERS/, Technical physics letters, 24(3), 1998, pp. 239-241
INASSBP DOUBLE-HETEROSTRUCTURE LASERS FOR THE SPECTRAL RANGE 2.7-3.0 MU-M (T = 77 K)
Authors: DANILOVA TN DANILOVA AP ERSHOV OG IMENKOV AN STEPANOV MV SHERSTNEV VV YAKOVLEV YP
Citation: Tn. Danilova et al., INASSBP DOUBLE-HETEROSTRUCTURE LASERS FOR THE SPECTRAL RANGE 2.7-3.0 MU-M (T = 77 K), Semiconductors, 32(2), 1998, pp. 218-221
NEW POTENTIAL APPLICATIONS OF SCANNING ELECTRON-MICROSCOPY TO STUDYING INASSB INASSBP LASERS/
Authors: SOLOVEV VA MIKHAILOVA MP STEPANOV MV SHERSTNEV VV YAKOVLEV YP
Citation: Va. Solovev et al., NEW POTENTIAL APPLICATIONS OF SCANNING ELECTRON-MICROSCOPY TO STUDYING INASSB INASSBP LASERS/, Technical physics letters, 23(3), 1997, pp. 233-235
3.3-MU-M LEDS FOR MEASURING METHANE
Authors: POPOV AA STEPANOV MV SHERSTNEV VV YAKOVLEV YP
Citation: Aa. Popov et al., 3.3-MU-M LEDS FOR MEASURING METHANE, Technical physics letters, 23(11), 1997, pp. 828-830
INASSB INASSBP DIODE-LASERS WITH SEPARATE ELECTRICAL AND OPTICAL CONFINEMENT, EMITTING AT 3-4 MU-M/
Authors: DANILOVA TN DANILOVA AP ERSHOV OG IMENKOV AH KOLCHANOVA NM STEPANOV MV SHERSTNEV VV YAKOVLEV YP
Citation: Tn. Danilova et al., INASSB INASSBP DIODE-LASERS WITH SEPARATE ELECTRICAL AND OPTICAL CONFINEMENT, EMITTING AT 3-4 MU-M/, Semiconductors, 31(8), 1997, pp. 831-834
INFLUENCE OF CHARGE-CARRIERS ON TUNING IN INASSB LASERS
Authors: DANILOVA TN EVSEENKO OI IMENKOV AN KOLCHANOVA NM STEPANOV MV SHERSTNEV VV YAKOVLEV YP
Citation: Tn. Danilova et al., INFLUENCE OF CHARGE-CARRIERS ON TUNING IN INASSB LASERS, Semiconductors, 31(6), 1997, pp. 563-566
CURRENT TUNING OF THE EMISSION WAVELENGTH OF LOW-THRESHOLD MESA STRIPE LASERS UTILIZING INASSB INASSBP DOUBLE HETEROSTRUCTURES AND EMITTINGIN THE VICINITY OF 3.3-MU-M/
Authors: DANILOVA TN DANILOVA AP ERSHOV OG IMENKOV AN STEPANOV MV SHERSTNEV VV YAKOVLEV YP
Citation: Tn. Danilova et al., CURRENT TUNING OF THE EMISSION WAVELENGTH OF LOW-THRESHOLD MESA STRIPE LASERS UTILIZING INASSB INASSBP DOUBLE HETEROSTRUCTURES AND EMITTINGIN THE VICINITY OF 3.3-MU-M/, Semiconductors, 31(11), 1997, pp. 1200-1203
MAXIMUM WORKING TEMPERATURE OF INASSB INASSBP DIODE-LASERS/
Authors: DANILOVA TN ERSHOV OG IMENKOV AN STEPANOV MV SHERSTNEV VV YAKOVLEV YP
Citation: Tn. Danilova et al., MAXIMUM WORKING TEMPERATURE OF INASSB INASSBP DIODE-LASERS/, Semiconductors, 30(7), 1996, pp. 667-670
CURRENT-RETUNNING OF WAVE-LENGTH OF LASER -EMISSION BASED ON INASSB INASSBP BINARY HETEROSTRUCTURE/
Authors: DANILOVA TN EVSEENKO OI IMENKOV AN KOLCHANOVA NM STEPANOV MV SHERSTNEV VV YAKOVLEV YP
Citation: Tn. Danilova et al., CURRENT-RETUNNING OF WAVE-LENGTH OF LASER -EMISSION BASED ON INASSB INASSBP BINARY HETEROSTRUCTURE/, Pis'ma v Zurnal tehniceskoj fiziki, 22(16), 1996, pp. 7-11
POLARIZATION OF THE EMISSION FROM DOUBLE-HETEROSTRUCTURE LASERS BASEDON INASSB INASSBP/
Authors: DANILOVA TN ERSHOV OG ZEGRYA GG IMENKOV AN STEPANOV MV SHERSTNEV VV YAKOVLEV YP
Citation: Tn. Danilova et al., POLARIZATION OF THE EMISSION FROM DOUBLE-HETEROSTRUCTURE LASERS BASEDON INASSB INASSBP/, Semiconductors, 29(9), 1995, pp. 834-837
MOLECULAR-BEAM EPITAXY OF CUBIC GAN ON A (001)GAAS SUBSTRATE USING HYDRAZINE
Authors: ANTIPOV VG ZUBRILOV AS MERKULOV AV NIKISHIN SA SITNIKOVA AA STEPANOV MV TROSHKOV SI ULIN VP FALEEV NN
Citation: Vg. Antipov et al., MOLECULAR-BEAM EPITAXY OF CUBIC GAN ON A (001)GAAS SUBSTRATE USING HYDRAZINE, Semiconductors, 29(10), 1995, pp. 946-951
PREPARATION OF IN-AS-SB-P SOLID-SOLUTIONS ISOPERIODIC TO INAS AND GASB NEAR THE BOUNDARY OF THE IMMISCIBILITY REGION
Authors: LITVAK AM MOISEEV KD STEPANOV MV SHERSTNEV VV YAKOVLEV YP
Citation: Am. Litvak et al., PREPARATION OF IN-AS-SB-P SOLID-SOLUTIONS ISOPERIODIC TO INAS AND GASB NEAR THE BOUNDARY OF THE IMMISCIBILITY REGION, Russian journal of applied chemistry, 67(12), 1994, pp. 1708-1711
STUDY OF QUANTUM-WELL HETEROSTRUCTURES BY SELECTIVE-LUMINESCENCE-EXCITATION SPECTROSCOPY
Authors: MAKSIMOV MV IVANOV SV KOPEV PS LEDENTSOV NN MELTSER BY TABATADZE IG STEPANOV MV USTINOV VM
Citation: Mv. Maksimov et al., STUDY OF QUANTUM-WELL HETEROSTRUCTURES BY SELECTIVE-LUMINESCENCE-EXCITATION SPECTROSCOPY, Semiconductors, 28(4), 1994, pp. 359-362
PHOTODETECTOR ALGAAS GAAS STRUCTURES FORMED ON SI SUBSTRATES BY COMBINING LIQUID-PHASE AND MOLECULAR-BEAM EPITAXY METHODS/
Authors: ANDREEV AM ANTIPOV VG KALINOVSKII VS KALLION RV NIKISHIN SA RUVIMOV SS STEPANOV MV TANKLEVSKAYA EM KHVOSTIKOV VP
Citation: Am. Andreev et al., PHOTODETECTOR ALGAAS GAAS STRUCTURES FORMED ON SI SUBSTRATES BY COMBINING LIQUID-PHASE AND MOLECULAR-BEAM EPITAXY METHODS/, Semiconductors, 27(1), 1993, pp. 74-76
Risultati: 1-15 |