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Results: 1-25 | 26-50 | 51-52
Results: 1-25/52
SI-29 HYPERFINE-STRUCTURE OF THE P-B1 INTERFACE DEFECT IN THERMAL (100)SI SIO2/
Authors: STESMANS A NOUWEN B AFANASEV VV
Citation: A. Stesmans et al., SI-29 HYPERFINE-STRUCTURE OF THE P-B1 INTERFACE DEFECT IN THERMAL (100)SI SIO2/, Journal of physics. Condensed matter, 10(27), 1998, pp. 465-472
BLOCKING OF THERMALLY-INDUCED INTERFACE DEGRADATION IN (111)SI SIO2 BY HE/
Authors: STESMANS A AFANASEV VV REVESZ AG
Citation: A. Stesmans et al., BLOCKING OF THERMALLY-INDUCED INTERFACE DEGRADATION IN (111)SI SIO2 BY HE/, Journal of physics. Condensed matter, 10(22), 1998, pp. 367-371
UNDETECTABILITY OF THE P-B1 POINT-DEFECT AS AN INTERFACE STATE IN THERMAL (100)SI SIO2/
Authors: STESMANS A AFANASEV VV
Citation: A. Stesmans et Vv. Afanasev, UNDETECTABILITY OF THE P-B1 POINT-DEFECT AS AN INTERFACE STATE IN THERMAL (100)SI SIO2/, Journal of physics. Condensed matter, 10(1), 1998, pp. 19-25
POSITIVELY CHARGED BONDED STATES OF HYDROGEN AT THE (111)SI SIO2 INTERFACE/
Authors: AFANASEV VV STESMANS A
Citation: Vv. Afanasev et A. Stesmans, POSITIVELY CHARGED BONDED STATES OF HYDROGEN AT THE (111)SI SIO2 INTERFACE/, Journal of physics. Condensed matter, 10(1), 1998, pp. 89-93
ELECTRICAL-ACTIVITY OF INTERFACIAL PARAMAGNETIC DEFECTS IN THERMAL (100)-SI SIO2/
Authors: STESMANS A AFANASEV VV
Citation: A. Stesmans et Vv. Afanasev, ELECTRICAL-ACTIVITY OF INTERFACIAL PARAMAGNETIC DEFECTS IN THERMAL (100)-SI SIO2/, Physical review. B, Condensed matter, 57(16), 1998, pp. 10030-10034
HYDROGEN-INDUCED VALENCE ALTERNATION STATE AT SIO2 INTERFACES
Authors: AFANASEV VV STESMANS A
Citation: Vv. Afanasev et A. Stesmans, HYDROGEN-INDUCED VALENCE ALTERNATION STATE AT SIO2 INTERFACES, Physical review letters, 80(23), 1998, pp. 5176-5179
ELECTRON-SPIN-RESONANCE FEATURES OF INTERFACE DEFECTS IN THERMAL (100)SI SIO2/
Authors: STESMANS A AFANASEV VV
Citation: A. Stesmans et Vv. Afanasev, ELECTRON-SPIN-RESONANCE FEATURES OF INTERFACE DEFECTS IN THERMAL (100)SI SIO2/, Journal of applied physics, 83(5), 1998, pp. 2449-2457
OXYGEN VACANCIES IN SIO2, LAYERS AN SI PRODUCED AT HIGH-TEMPERATURE
Authors: AFANASEV VV STESMANS A REVESZ AG HUGHES HL
Citation: Vv. Afanasev et al., OXYGEN VACANCIES IN SIO2, LAYERS AN SI PRODUCED AT HIGH-TEMPERATURE, Journal of the Electrochemical Society, 145(9), 1998, pp. 3157-3160
DOMINANT DEFECT LEVELS IN DIAMOND THIN-FILMS - A PHOTOCURRENT AND ELECTRON-PARAMAGNETIC-RESONANCE STUDY
Authors: NESLADEK M STALS LM STESMANS A IAKOUBOVSKIJ K ADRIAENSSENS GJ
Citation: M. Nesladek et al., DOMINANT DEFECT LEVELS IN DIAMOND THIN-FILMS - A PHOTOCURRENT AND ELECTRON-PARAMAGNETIC-RESONANCE STUDY, Applied physics letters, 72(25), 1998, pp. 3306-3308
HYDROGEN-INDUCED THERMAL INTERFACE DEGRADATION IN (111) SI SIO2 REVEALED BY ELECTRON-SPIN-RESONANCE/
Authors: STESMANS A AFANASEV VV
Citation: A. Stesmans et Vv. Afanasev, HYDROGEN-INDUCED THERMAL INTERFACE DEGRADATION IN (111) SI SIO2 REVEALED BY ELECTRON-SPIN-RESONANCE/, Applied physics letters, 72(18), 1998, pp. 2271-2273
POSITIVE CHARGING OF THERMAL SIO2 (100)SI INTERFACE BY HYDROGEN ANNEALING/
Authors: AFANASEV VV STESMANS A
Citation: Vv. Afanasev et A. Stesmans, POSITIVE CHARGING OF THERMAL SIO2 (100)SI INTERFACE BY HYDROGEN ANNEALING/, Applied physics letters, 72(1), 1998, pp. 79-81
PHOTON-STIMULATED TUNNELING OF ELECTRONS IN SIO2 - EVIDENCE FOR A DEFECT-ASSISTED PROCESS
Authors: AFANASEV VV STESMANS A
Citation: Vv. Afanasev et A. Stesmans, PHOTON-STIMULATED TUNNELING OF ELECTRONS IN SIO2 - EVIDENCE FOR A DEFECT-ASSISTED PROCESS, Journal of physics. Condensed matter, 9(6), 1997, pp. 55-60
CREATION OF P-B INTERFACE DEFECTS IN THERMAL SI SIO2 THROUGH ANNEALING - COMMENT - REPLY/
Authors: STESMANS A AFANASEV VV
Citation: A. Stesmans et Vv. Afanasev, CREATION OF P-B INTERFACE DEFECTS IN THERMAL SI SIO2 THROUGH ANNEALING - COMMENT - REPLY/, Journal of physics. Condensed matter, 9(15), 1997, pp. 3299-3301
ANALYSIS OF NEAR-INTERFACIAL SIO2 TRAPS USING PHOTON-STIMULATED ELECTRON-TUNNELING
Authors: AFANASEV VV STESMANS A
Citation: Vv. Afanasev et A. Stesmans, ANALYSIS OF NEAR-INTERFACIAL SIO2 TRAPS USING PHOTON-STIMULATED ELECTRON-TUNNELING, Microelectronic engineering, 36(1-4), 1997, pp. 149-152
POINT-DEFECT GENERATION IN SIO2 BY INTERACTION WITH SIO AT ELEVATED-TEMPERATURES
Authors: STESMANS A AFANASEV VV
Citation: A. Stesmans et Vv. Afanasev, POINT-DEFECT GENERATION IN SIO2 BY INTERACTION WITH SIO AT ELEVATED-TEMPERATURES, Microelectronic engineering, 36(1-4), 1997, pp. 201-204
INTERFACIAL DEFECTS IN SIO2 REVEALED BY PHOTON-STIMULATED TUNNELING OF ELECTRONS
Authors: AFANASEV VV STESMANS A
Citation: Vv. Afanasev et A. Stesmans, INTERFACIAL DEFECTS IN SIO2 REVEALED BY PHOTON-STIMULATED TUNNELING OF ELECTRONS, Physical review letters, 78(12), 1997, pp. 2437-2440
STRUCTURAL INHOMOGENEITY AND SILICON ENRICHMENT OF BURIED SIO2 LAYERSFORMED BY OXYGEN-ION IMPLANTATION IN SILICON
Authors: AFANASEV VV STESMANS A REVESZ AG HUGHES HL
Citation: Vv. Afanasev et al., STRUCTURAL INHOMOGENEITY AND SILICON ENRICHMENT OF BURIED SIO2 LAYERSFORMED BY OXYGEN-ION IMPLANTATION IN SILICON, Journal of applied physics, 82(5), 1997, pp. 2184-2199
TRAP GENERATION IN BURIED OXIDES OF SILICON-ON-INSULATOR STRUCTURES BY VACUUM-ULTRAVIOLET RADIATION
Authors: AFANASEV VV STESMANS A REVESZ AG HUGHES HL
Citation: Vv. Afanasev et al., TRAP GENERATION IN BURIED OXIDES OF SILICON-ON-INSULATOR STRUCTURES BY VACUUM-ULTRAVIOLET RADIATION, Journal of the Electrochemical Society, 144(2), 1997, pp. 749-753
H-COMPLEXED OXYGEN VACANCY IN SIO2 - ENERGY-LEVEL OF A NEGATIVELY CHARGED STATE
Authors: AFANASEV VV STESMANS A
Citation: Vv. Afanasev et A. Stesmans, H-COMPLEXED OXYGEN VACANCY IN SIO2 - ENERGY-LEVEL OF A NEGATIVELY CHARGED STATE, Applied physics letters, 71(26), 1997, pp. 3844-3846
MECHANISM OF SI ISLAND RETENTION IN BURIED SIO2 LAYERS FORMED BY OXYGEN-ION IMPLANTATION
Authors: AFANASEV VV STESMANS A REVESZ AG HUGHES HL
Citation: Vv. Afanasev et al., MECHANISM OF SI ISLAND RETENTION IN BURIED SIO2 LAYERS FORMED BY OXYGEN-ION IMPLANTATION, Applied physics letters, 71(15), 1997, pp. 2106-2108
ELECTRICAL-CONDUCTION OF BURIED SIO2 LAYERS ANALYZED BY PHOTON-STIMULATED ELECTRON-TUNNELING
Authors: AFANASEV VV STESMANS A
Citation: Vv. Afanasev et A. Stesmans, ELECTRICAL-CONDUCTION OF BURIED SIO2 LAYERS ANALYZED BY PHOTON-STIMULATED ELECTRON-TUNNELING, Applied physics letters, 70(10), 1997, pp. 1260-1262
CREATION OF P-B INTERFACE DEFECTS IN THERMAL SI SIO2 THROUGH ANNEALING/
Authors: STESMANS A AFANASEV VV
Citation: A. Stesmans et Vv. Afanasev, CREATION OF P-B INTERFACE DEFECTS IN THERMAL SI SIO2 THROUGH ANNEALING/, Journal of physics. Condensed matter, 8(36), 1996, pp. 505-509
INFLUENCE OF OXYGEN AND CARBON ON THE GENERATION AND ANNIHILATION OF RADIATION DEFECTS IN SILICON
Authors: TRAUWAERT MA VANHELLEMONT J MAES HE VANBAVEL AM LANGOUCHE G STESMANS A CLAUWS P
Citation: Ma. Trauwaert et al., INFLUENCE OF OXYGEN AND CARBON ON THE GENERATION AND ANNIHILATION OF RADIATION DEFECTS IN SILICON, Materials science & engineering. B, Solid-state materials for advanced technology, 36(1-3), 1996, pp. 196-199
THERMALLY-INDUCED INTERFACE DEGRADATION IN (111)SI SIO2 TRACED BY ELECTRON-SPIN-RESONANCE/
Authors: STESMANS A AFANASEV VV
Citation: A. Stesmans et Vv. Afanasev, THERMALLY-INDUCED INTERFACE DEGRADATION IN (111)SI SIO2 TRACED BY ELECTRON-SPIN-RESONANCE/, Physical review. B, Condensed matter, 54(16), 1996, pp. 11129-11132
ELECTRON-STATES AND MICROSTRUCTURE OF THIN A-C-H LAYERS
Authors: AFANASEV VV STESMANS A ANDERSSON MO
Citation: Vv. Afanasev et al., ELECTRON-STATES AND MICROSTRUCTURE OF THIN A-C-H LAYERS, Physical review. B, Condensed matter, 54(15), 1996, pp. 10820-10826
Risultati: 1-25 | 26-50 | 51-52