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Results: 26-43/43
Authors:
LOGOTHETIDIS S
ALEXANDROU I
STOEMENOS J
Citation: S. Logothetidis et al., IN-SITU SPECTROSCOPIC ELLIPSOMETRY TO CONTROL THE GROWTH OF TI NITRIDE AND CARBIDE THIN-FILMS, Applied surface science, 86(1-4), 1995, pp. 185-189
Authors:
TSOUKALAS D
DIMITRAKIS P
STOEMENOS J
PAPAIOANNOU G
Citation: D. Tsoukalas et al., ELECTRICAL AND STRUCTURAL CHARACTERIZATION OF WAFER BONDED NON-ANNEALED SIMOX, Microelectronic engineering, 28(1-4), 1995, pp. 471-474
Authors:
GIRGINOUDI D
GIRGINOUDI S
THANAILAKIS A
GEORGOULAS N
STOEMENOS J
ANTONOPOULOS J
Citation: D. Girginoudi et al., STABILITY OF STRUCTURAL DEFECTS OF POLYCRYSTALLINE SILICON GROWN BY RAPID THERMAL ANNEALING OF AMORPHOUS-SILICON FILMS, Thin solid films, 268(1-2), 1995, pp. 1-4
Authors:
PECZ B
FRANGIS N
LOGOTHETIDIS S
ALEXANDROU I
BARNA PB
STOEMENOS J
Citation: B. Pecz et al., ELECTRON-MICROSCOPY CHARACTERIZATION OF TIN FILMS ON SI, GROWN BY DC-REACTIVE MAGNETRON SPUTTERING, Thin solid films, 268(1-2), 1995, pp. 57-63
Authors:
ZEKENTES K
PAPAIOANNOU V
PECZ B
STOEMENOS J
Citation: K. Zekentes et al., EARLY STAGES OF GROWTH OF BETA-SIC ON SI BY MBE, Journal of crystal growth, 157(1-4), 1995, pp. 392-399
Authors:
RODRIGUEZVIEJO J
STOEMENOS J
CLAVAGUERA N
CLAVAGUERAMORA MT
Citation: J. Rodriguezviejo et al., GROWTH-MORPHOLOGY OF LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION SILICON-CARBIDE ON A-SIO2 SI(100) SUBSTRATES/, Journal of crystal growth, 155(3-4), 1995, pp. 214-222
Authors:
HEERA V
STOEMENOS J
KOGLER R
SKORUPA W
Citation: V. Heera et al., AMORPHIZATION AND RECRYSTALLIZATION OF 6H-SIC BY ION-BEAM IRRADIATION, Journal of applied physics, 77(7), 1995, pp. 2999-3009
Authors:
STOEMENOS J
GARCIA A
ASPAR B
MARGAIL J
Citation: J. Stoemenos et al., SILICON-ON-INSULATOR OBTAINED BY HIGH-DOSE OXYGEN IMPLANTATION, MICROSTRUCTURE, AND FORMATION MECHANISM, Journal of the Electrochemical Society, 142(4), 1995, pp. 1248-1260
Authors:
HEERA V
KOGLER R
SKORUPA W
STOEMENOS J
Citation: V. Heera et al., COMPLETE RECRYSTALLIZATION OF AMORPHOUS-SILICON CARBIDE LAYERS BY IONIRRADIATION, Applied physics letters, 67(14), 1995, pp. 1999-2001
Authors:
NEJIM A
HEMMENT PLF
STOEMENOS J
Citation: A. Nejim et al., SIC BURIED LAYER FORMATION BY ION-BEAM SYNTHESIS AT 950-DEGREES-C, Applied physics letters, 66(20), 1995, pp. 2646-2648
Authors:
CARLUCCIO R
STOEMENOS J
FORTUNATO G
MEAKIN DB
BIANCONI M
Citation: R. Carluccio et al., MICROSTRUCTURE OF POLYCRYSTALLINE SILICON FILMS OBTAINED BY COMBINED FURNACE AND LASER ANNEALING, Applied physics letters, 66(11), 1995, pp. 1394-1396
Authors:
HAJI L
JOUBERT P
STOEMENOS J
ECONOMOU NA
Citation: L. Haji et al., MODE OF GROWTH AND MICROSTRUCTURE OF POLYCRYSTALLINE SILICON OBTAINEDBY SOLID-PHASE CRYSTALLIZATION OF AN AMORPHOUS-SILICON FILM, Journal of applied physics, 75(8), 1994, pp. 3944-3952
Authors:
KOMNINOU P
STOEMENOS J
DIMITRAKOPULOS GP
KARAKOSTAS T
Citation: P. Komninou et al., MISFIT DISLOCATIONS AND ANTIPHASE DOMAIN BOUNDARIES IN GAAS SI INTERFACE/, Journal of applied physics, 75(1), 1994, pp. 143-152
Authors:
GEORGAKILAS A
STOEMENOS J
TSAGARAKI K
KOMNINOU P
FLEVARIS N
PANAYOTATOS P
CHRISTOU A
Citation: A. Georgakilas et al., GENERATION AND ANNIHILATION OF ANTIPHASE DOMAIN BOUNDARIES IN GAAS ONSI GROWN BY MOLECULAR-BEAM EPITAXY, Journal of materials research, 8(8), 1993, pp. 1908-1921
Authors:
BONNEL M
DUHAMEL N
HAJI L
LOISEL B
STOEMENOS J
Citation: M. Bonnel et al., POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS WITH 2-STEP ANNEALING PROCESS, IEEE electron device letters, 14(12), 1993, pp. 551-553
Authors:
STOEMENOS J
Citation: J. Stoemenos, MICROSTRUCTURE OF SIMOX BURIED OXIDE, MECHANISMS OF DEFECT FORMATION AND RELATED RELIABILITY ISSUES, Microelectronic engineering, 22(1-4), 1993, pp. 307-314
Authors:
DIMITRIADIS CA
STOEMENOS J
COXON PA
FRILIGKOS S
ANTONOPOULOS J
ECONOMOU NA
Citation: Ca. Dimitriadis et al., EFFECT OF PRESSURE ON THE GROWTH OF CRYSTALLITES OF LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITED POLYCRYSTALLINE SILICON FILMS AND THE EFFECTIVE ELECTRON-MOBILITY UNDER HIGH NORMAL FIELD IN THIN-FILM TRANSISTORS, Journal of applied physics, 73(12), 1993, pp. 8402-8411
Authors:
TSOUKALAS D
TSAMIS C
STOEMENOS J
Citation: D. Tsoukalas et al., INVESTIGATION OF SILICON INTERSTITIAL REACTIONS WITH INSULATING FILMSUSING THE SILICON-WAFER BONDING TECHNIQUE, Applied physics letters, 63(23), 1993, pp. 3167-3169