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Results: 1-24 |
Results: 24
BEHAVIOR OF EPITAXIAL GAAS-LAYERS AS ALPHA-PARTICLE DETECTORS
Authors: BOTNARYUK VM ZHILYAEV YV IVANOV AM STROKAN NB FEDOROV LM
Citation: Vm. Botnaryuk et al., BEHAVIOR OF EPITAXIAL GAAS-LAYERS AS ALPHA-PARTICLE DETECTORS, Technical physics letters, 24(4), 1998, pp. 250-253
DETERMINATION OF THE UNIFORMITY OF THE CARRIER LIFETIME IN A MATERIALFROM THE PROFILE OF THE AMPLITUDE SPECTRUM OF AN ION DETECTOR
Authors: STROKAN NB
Citation: Nb. Strokan, DETERMINATION OF THE UNIFORMITY OF THE CARRIER LIFETIME IN A MATERIALFROM THE PROFILE OF THE AMPLITUDE SPECTRUM OF AN ION DETECTOR, Technical physics letters, 24(3), 1998, pp. 186-188
ON THE GENERATION OF RADIATION DEFECTS BY ACCELERATED IONS IN SILICON
Authors: IVANOV AM STROKAN NB
Citation: Am. Ivanov et Nb. Strokan, ON THE GENERATION OF RADIATION DEFECTS BY ACCELERATED IONS IN SILICON, Technical physics letters, 24(10), 1998, pp. 793-796
PROPERTIES OF P(-N STRUCTURES WITH A BURIED LAYER OF RADIATION-INDUCED DEFECTS())
Authors: IVANOV AM STROKAN NB SHUMAN VB
Citation: Am. Ivanov et al., PROPERTIES OF P(-N STRUCTURES WITH A BURIED LAYER OF RADIATION-INDUCED DEFECTS()), Semiconductors, 32(3), 1998, pp. 325-331
CARRIER TRANSPORT IN A DIODE BASE WITH LOCALLY NONUNIFORM RECOMBINATION PROPERTIES
Authors: IVANOV AM STROKAN NB SHUMAN VB
Citation: Am. Ivanov et al., CARRIER TRANSPORT IN A DIODE BASE WITH LOCALLY NONUNIFORM RECOMBINATION PROPERTIES, Technical physics letters, 23(5), 1997, pp. 369-372
FORMATION OF CARRIER GENERATION CENTERS IN PURE SI UPON INTERACTION WITH FAST IONS
Authors: IVANOV AM STROKAN NB
Citation: Am. Ivanov et Nb. Strokan, FORMATION OF CARRIER GENERATION CENTERS IN PURE SI UPON INTERACTION WITH FAST IONS, Semiconductors, 31(6), 1997, pp. 575-579
RAPID ANALYSIS OF A MIXTURE OF TRANSURANIC ELEMENTS
Authors: VERBITSKAYA EM EREMIN VK ILYASHENKO IN MALYARENKO AM RODIONOV YF STROKAN NB YASHIN YA
Citation: Em. Verbitskaya et al., RAPID ANALYSIS OF A MIXTURE OF TRANSURANIC ELEMENTS, Instruments and experimental techniques, 40(3), 1997, pp. 338-340
CARRIER LIFETIME IN ALPHA-PARTICLE TRACKS FOR DIFFUSION-DRIFT TRANSPORT IN SI
Authors: ILYASHENKO IN STROKAN NB
Citation: In. Ilyashenko et Nb. Strokan, CARRIER LIFETIME IN ALPHA-PARTICLE TRACKS FOR DIFFUSION-DRIFT TRANSPORT IN SI, Semiconductors, 30(2), 1996, pp. 167-170
CHARACTERISTIC FEATURES OF THE LINESHAPE IN THE SPECTROMETRY OF IONS USING SI DETECTORS
Authors: ILYASHENKO IN STROKAN NB SCHMIDT B
Citation: In. Ilyashenko et al., CHARACTERISTIC FEATURES OF THE LINESHAPE IN THE SPECTROMETRY OF IONS USING SI DETECTORS, Semiconductors, 30(12), 1996, pp. 1158-1161
SHAPE OF A SPECTRAL-LINE OF ION SI-DETECT ORS
Authors: ILYASHENKO IN STROKAN NB
Citation: In. Ilyashenko et Nb. Strokan, SHAPE OF A SPECTRAL-LINE OF ION SI-DETECT ORS, Pis'ma v Zurnal tehniceskoj fiziki, 22(15), 1996, pp. 1-7
RECOMBINATION OF NONEQUILIBRIUM CHARGE-CARRIERS IN HEAVY-ION TRACKS IN SILICON
Authors: EREMIN VK ILYASHENKO IN STROKAN NB SCHMIDT B
Citation: Vk. Eremin et al., RECOMBINATION OF NONEQUILIBRIUM CHARGE-CARRIERS IN HEAVY-ION TRACKS IN SILICON, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 377(2-3), 1996, pp. 184-190
FORMATION OF STRUCTURAL DEFECTS AS FAST IONS ARE STOPPED IN SILICON
Authors: IVANOV AM ILYASHENKO IN STROKAN NB SCHMIDT B
Citation: Am. Ivanov et al., FORMATION OF STRUCTURAL DEFECTS AS FAST IONS ARE STOPPED IN SILICON, Semiconductors, 29(3), 1995, pp. 281-285
RECOMBINATION OF NONEQUILIBRIUM CARRIERS IN THE TRACKS OF HEAVY-IONS IN SILICON
Authors: EREMIN VK ILYASHENKO IN STROKAN NB SCHMIDT B
Citation: Vk. Eremin et al., RECOMBINATION OF NONEQUILIBRIUM CARRIERS IN THE TRACKS OF HEAVY-IONS IN SILICON, Semiconductors, 29(1), 1995, pp. 42-47
PARALLEL SWITCHING OF SEMICONDUCTING DETE CTORS DUE TO ION SPECTROMETRY
Authors: EREMIN VK ILYASHENKO IN STROKAN NB
Citation: Vk. Eremin et al., PARALLEL SWITCHING OF SEMICONDUCTING DETE CTORS DUE TO ION SPECTROMETRY, Pis'ma v Zurnal tehniceskoj fiziki, 20(3), 1994, pp. 29-35
RECOMBINATION OF NONEQUILIBRIUM CARRIERS IN HEAVY-ION TRACKS IN SI
Authors: EREMIN VK ILYASHENKO IN STROKAN NB SHMIDT B
Citation: Vk. Eremin et al., RECOMBINATION OF NONEQUILIBRIUM CARRIERS IN HEAVY-ION TRACKS IN SI, Pis'ma v Zurnal tehniceskoj fiziki, 20(13), 1994, pp. 1-7
EFFECT OF DEUTERON IRRADIATION ON RADIATION DETECTORS MADE OF HIGH-RESISTIVITY SILICON
Authors: VERBITSKAYA EM EREMIN VE IVANOV AM STROKAN NB
Citation: Em. Verbitskaya et al., EFFECT OF DEUTERON IRRADIATION ON RADIATION DETECTORS MADE OF HIGH-RESISTIVITY SILICON, Semiconductors, 27(7), 1993, pp. 612-616
CHARACTERISTIC FEATURES OF THE GENERATION CURRENT IN ALPHA-IRRADIATEDP-N JUNCTIONS MADE FROM HIGH-RESISTIVITY SILICON()
Authors: VERBITSKAYA EM EREMIN VK IVANOV AM STROKAN NB
Citation: Em. Verbitskaya et al., CHARACTERISTIC FEATURES OF THE GENERATION CURRENT IN ALPHA-IRRADIATEDP-N JUNCTIONS MADE FROM HIGH-RESISTIVITY SILICON(), Semiconductors, 27(2), 1993, pp. 115-119
RADIATION DEFECTS IN SILICON IRRADIATED WITH ALPHA-PARTICLES AT LOW-TEMPERATURES
Authors: BERMAN LS IVANOV AM PAVLOVA ML REMENYUK AD STROKAN NB
Citation: Ls. Berman et al., RADIATION DEFECTS IN SILICON IRRADIATED WITH ALPHA-PARTICLES AT LOW-TEMPERATURES, Semiconductors, 27(11-12), 1993, pp. 987-990
PRECISION SEMICONDUCTOR SPECTROMETRY OF IONS
Authors: VERBITSKAYA EM EREMIN VK MALYARENKO AM STROKAN NB SUKHANOV VL SCHMIDT B VONBORANY J
Citation: Em. Verbitskaya et al., PRECISION SEMICONDUCTOR SPECTROMETRY OF IONS, Semiconductors, 27(11-12), 1993, pp. 1127-1136
ROLE OF OXYGEN IN INSTABILITY OF CARBON-RELATED RADIATION DEFECTS IN SILICON
Authors: VERBITSKAYA EM EREMIN VK IVANOV AM STROKAN NB LI Z SCHMIDT B
Citation: Em. Verbitskaya et al., ROLE OF OXYGEN IN INSTABILITY OF CARBON-RELATED RADIATION DEFECTS IN SILICON, Semiconductors, 27(11-12), 1993, pp. 1136-1140
DETERMINATION OF THE MIXTURE COMPOSITION OF TRANSURANIUM NUCLIDES BY SPECTRA OF ALPHA-DECAY USING PRECISION SI DETECTORS
Authors: VERBITSKAYA EM EREMIN VK MALYARENKO AM RODIONOV YF STROKAN NB YASHIN YA
Citation: Em. Verbitskaya et al., DETERMINATION OF THE MIXTURE COMPOSITION OF TRANSURANIUM NUCLIDES BY SPECTRA OF ALPHA-DECAY USING PRECISION SI DETECTORS, Pis'ma v Zurnal tehniceskoj fiziki, 19(12), 1993, pp. 42-46
NUMERICAL-ANALYSIS OF OXYGEN DISTRIBUTION IN DENSE FILMS VIA NUCLEAR-REACTION ON DEUTERONS
Authors: DYUMIN AN EREMIN VK KONNIKOV SG LEBEDEV VM LUKYANOV YG STROKAN NB
Citation: An. Dyumin et al., NUMERICAL-ANALYSIS OF OXYGEN DISTRIBUTION IN DENSE FILMS VIA NUCLEAR-REACTION ON DEUTERONS, Zurnal tehniceskoj fiziki, 63(9), 1993, pp. 166-172
ANALYSIS OF DEFECT DISTRIBUTION IN YBA2CU 307 EPITAXIAL-FILMS BY THE ION CHANNELING METHOD
Authors: VERBITSKAYA EM EREMIN VK KOBZEV AP KONNIKOV SG STROKAN NB SHIROKOV DM
Citation: Em. Verbitskaya et al., ANALYSIS OF DEFECT DISTRIBUTION IN YBA2CU 307 EPITAXIAL-FILMS BY THE ION CHANNELING METHOD, Zurnal tehniceskoj fiziki, 63(5), 1993, pp. 111-116
HIGH DEPTH RESOLUTION RUTHERFORD BACKSCATTERING METHOD FOR ASSESSING HIGH-T(C) STRUCTURES
Authors: VERBITSKAYA EM EREMIN VK KONNIKOV SG STROKAN NB BORTNYANSKII AL KLOPENKOV ML PAVLOVETS MV AFONIN OF VIKTOROV BV
Citation: Em. Verbitskaya et al., HIGH DEPTH RESOLUTION RUTHERFORD BACKSCATTERING METHOD FOR ASSESSING HIGH-T(C) STRUCTURES, Instruments and experimental techniques, 36(6), 1993, pp. 922-926
Risultati: 1-24 |