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Results: 1-15 |
Results: 15
CHARACTERISTICS OF MG-DOPED GAN AND ALGAN GROWN BY H-2-AMBIENT AND N-2-AMBIENT METALORGANIC CHEMICAL-VAPOR-DEPOSITION
Authors: SUGIURA L SUZUKI M NISHIO J ITAYA K KOKUBUN Y ISHIKAWA M
Citation: L. Sugiura et al., CHARACTERISTICS OF MG-DOPED GAN AND ALGAN GROWN BY H-2-AMBIENT AND N-2-AMBIENT METALORGANIC CHEMICAL-VAPOR-DEPOSITION, JPN J A P 1, 37(7), 1998, pp. 3878-3881
REACTIVE ION-BEAM ETCHING AND OVERGROWTH PROCESS IN THE FABRICATION OF INGAN INNER STRIPE LASER-DIODES
Authors: NUNOUE S YAMAMOTO M SUZUKI M NOZAKI C NISHIO J SUGIURA L ONOMURA M ITAYA K ISHIKAWA M
Citation: S. Nunoue et al., REACTIVE ION-BEAM ETCHING AND OVERGROWTH PROCESS IN THE FABRICATION OF INGAN INNER STRIPE LASER-DIODES, JPN J A P 1, 37(3B), 1998, pp. 1470-1473
PHOTOLUMINESCENCE STUDY OF GAN INGAN MULTIQUANTUM-WELL STRUCTURES AT ROOM-TEMPERATURE/
Authors: SAITO S ONOMURA M NISHIO J SUGIURA L ITAYA K SUGAWARA H ISHIKAWA M
Citation: S. Saito et al., PHOTOLUMINESCENCE STUDY OF GAN INGAN MULTIQUANTUM-WELL STRUCTURES AT ROOM-TEMPERATURE/, Journal of crystal growth, 190, 1998, pp. 128-132
BAND-GAP SEPARATION IN INGAN EPILAYERS GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION
Authors: CHICHIBU S ARITA M NAKANISHI H NISHIO J SUGIURA L KOKUBUN Y ITAYA K
Citation: S. Chichibu et al., BAND-GAP SEPARATION IN INGAN EPILAYERS GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Journal of applied physics, 83(5), 1998, pp. 2860-2862
P-TYPE CONDUCTION IN AS-GROWN MG-DOPED GAN GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION
Authors: SUGIURA L SUZUKI M NISHIO J
Citation: L. Sugiura et al., P-TYPE CONDUCTION IN AS-GROWN MG-DOPED GAN GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Applied physics letters, 72(14), 1998, pp. 1748-1750
EFFECTS OF THERMAL-TREATMENT OF LOW-TEMPERATURE GAN BUFFER LAYERS ON THE QUALITY OF SUBSEQUENT GAN LAYERS
Authors: SUGIURA L ITAYA K NISHIO J FUJIMOTO H KOKUBUN Y
Citation: L. Sugiura et al., EFFECTS OF THERMAL-TREATMENT OF LOW-TEMPERATURE GAN BUFFER LAYERS ON THE QUALITY OF SUBSEQUENT GAN LAYERS, Journal of applied physics, 82(10), 1997, pp. 4877-4882
DISLOCATION-MOTION IN GAN LIGHT-EMITTING DEVICES AND ITS EFFECT ON DEVICE LIFETIME
Authors: SUGIURA L
Citation: L. Sugiura, DISLOCATION-MOTION IN GAN LIGHT-EMITTING DEVICES AND ITS EFFECT ON DEVICE LIFETIME, Journal of applied physics, 81(4), 1997, pp. 1633-1638
CHARACTERIZATION OF INGAN MULTIQUANTUM-WELL STRUCTURES FOR BLUE SEMICONDUCTOR-LASER DIODES
Authors: NISHIO J SUGIURA L FUJIMOTO H KOKUBUN Y ITAYA K
Citation: J. Nishio et al., CHARACTERIZATION OF INGAN MULTIQUANTUM-WELL STRUCTURES FOR BLUE SEMICONDUCTOR-LASER DIODES, Applied physics letters, 70(25), 1997, pp. 3431-3433
COMPARISON OF DEGRADATION CAUSED BY DISLOCATION-MOTION IN COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICES
Authors: SUGIURA L
Citation: L. Sugiura, COMPARISON OF DEGRADATION CAUSED BY DISLOCATION-MOTION IN COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICES, Applied physics letters, 70(10), 1997, pp. 1317-1319
ROOM-TEMPERATURE PULSED OPERATION OF NITRIDE BASED MULTI-QUANTUM-WELLLASER-DIODES WITH CLEAVED FACETS ON CONVENTIONAL C-FACE SAPPHIRE SUBSTRATES
Authors: ITAYA K ONOMURA M NISHIO J SUGIURA L SAITO S SUZUKI M RENNIE J NUNOUE SY YAMAMOTO M FUJIMOTO H KOKUBUN Y OHBA Y HATAKOSHI G ISHIKAWA M
Citation: K. Itaya et al., ROOM-TEMPERATURE PULSED OPERATION OF NITRIDE BASED MULTI-QUANTUM-WELLLASER-DIODES WITH CLEAVED FACETS ON CONVENTIONAL C-FACE SAPPHIRE SUBSTRATES, JPN J A P 2, 35(10B), 1996, pp. 1315-1317
ORIENTATION DEPENDENCE OF HGCDTE EPITAXIAL LAYERS GROWN BY MOCVD ON SI SUBSTRATES
Authors: SHIGENAKA K MATSUSHITA K SUGIURA L NAKATA F HIRAHARA K UCHIKOSHI M NAGASHIMA M WADA H
Citation: K. Shigenaka et al., ORIENTATION DEPENDENCE OF HGCDTE EPITAXIAL LAYERS GROWN BY MOCVD ON SI SUBSTRATES, Journal of electronic materials, 25(8), 1996, pp. 1347-1352
LATTICE-RELAXATION IN LARGE MISMATCH SYSTEMS OF (111)CDTE (100)GAAS AND (133)CDTE/(211)GAAS LAYERS/
Authors: SHIGENAKA K SUGIURA L NAKATA F HIRAHARA K
Citation: K. Shigenaka et al., LATTICE-RELAXATION IN LARGE MISMATCH SYSTEMS OF (111)CDTE (100)GAAS AND (133)CDTE/(211)GAAS LAYERS/, Journal of crystal growth, 145(1-4), 1994, pp. 376-381
MISFIT DISLOCATION MICROSTRUCTURE AND KINETICS OF HGCDTE CDZNTE UNDERTENSILE AND COMPRESSIVE STRESS
Authors: SUGIURA L SHIGENAKA K NAKATA F HIRAHARA K
Citation: L. Sugiura et al., MISFIT DISLOCATION MICROSTRUCTURE AND KINETICS OF HGCDTE CDZNTE UNDERTENSILE AND COMPRESSIVE STRESS, Journal of crystal growth, 145(1-4), 1994, pp. 547-551
INFLUENCE OF LATTICE MISMATCH ON THE ELECTRICAL AND STRUCTURAL-PROPERTIES OF HGCDTE EPILAYERS
Authors: SUGIURA L SHIGENAKA K NAKATA F HIRAHARA K
Citation: L. Sugiura et al., INFLUENCE OF LATTICE MISMATCH ON THE ELECTRICAL AND STRUCTURAL-PROPERTIES OF HGCDTE EPILAYERS, JPN J A P 1, 32, 1993, pp. 669-671
EFFECTS OF GROWTH-RATE AND MERCURY PARTIAL-PRESSURE ON TWIN FORMATIONIN HGCDTE (111) LAYERS GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION
Authors: SHIGENAKA K SUGIURA L NAKATA F HIRAHARA K
Citation: K. Shigenaka et al., EFFECTS OF GROWTH-RATE AND MERCURY PARTIAL-PRESSURE ON TWIN FORMATIONIN HGCDTE (111) LAYERS GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Journal of electronic materials, 22(8), 1993, pp. 865-871
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