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Citation: Lo. Bjorketun et al., INTERFACIAL VOID FORMATION DURING VAPOR-PHASE GROWTH OF 3C-SIC ON SI(001) AND SI(111) SUBSTRATES - CHARACTERIZATION BY TRANSMISSION ELECTRON-MICROSCOPY, Journal of crystal growth, 182(3-4), 1997, pp. 379-388
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Citation: Jra. Carlsson et al., PREDICTING THE CRYSTALLIZATION TEMPERATURE-VARIATION WITH COMPOSITIONFOR AMORPHOUS SILICON-BASED BINARY ALLOY THIN-FILMS, Journal of applied physics, 81(3), 1997, pp. 1150-1156