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Results:
1-8
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Results: 8
Authors:
SZELAG B
BALESTRA F
GHIBAUDO G
Citation: B. Szelag et al., REVERSE SHORT-CHANNEL EFFECT IN SILICON MOSFET OPERATED AT LOW-TEMPERATURE, Journal de physique. IV, 8(P3), 1998, pp. 9-12
Authors:
SZELAG B
SKOTNICKI T
BALESTRA F
Citation: B. Szelag et al., CRYOGENIC OPERATION OF HEAVY-ION IMPLANTED N-CHANNEL AND P-CHANNEL MOSFET, Journal de physique. IV, 8(P3), 1998, pp. 37-40
Authors:
SZELAG B
BALESTRA F
GHIBAUDO G
Citation: B. Szelag et al., COMPREHENSIVE ANALYSIS OF REVERSE SHORT-CHANNEL EFFECT IN SILICON MOSFETS FROM LOW-TEMPERATURE OPERATION, IEEE electron device letters, 19(12), 1998, pp. 511-513
Authors:
SZELAG B
BALESTRA F
Citation: B. Szelag et F. Balestra, SUBSTRATE BIAS DEPENDENCE OF THE TRANSCONDUCTANCE OF DEEP-SUBMICRON SILICON NMOSFETS, Solid-state electronics, 42(10), 1998, pp. 1827-1829
Authors:
SZELAG B
DUTOIT M
BALESTRA F
Citation: B. Szelag et al., HOT-CARRIER EFFECTS IN DEEP-SUBMICRON BULK SILICON MOSFETS, Solid-state electronics, 42(1), 1998, pp. 43-48
Authors:
SZELAG B
BALESTRA F
Citation: B. Szelag et F. Balestra, TRANSCONDUCTANCE ENHANCEMENT AT LOW-TEMPERATURES IN DEEP-SUBMICROMETER MOSFETS, Electronics Letters, 34(18), 1998, pp. 1793-1794
Authors:
SZELAG B
BALESTRA F
Citation: B. Szelag et F. Balestra, PHOTON-EMISSION IN DEEP-SUBMICRON SI N-MOSFET, Electronics Letters, 33(23), 1997, pp. 1990-1992
Authors:
SZELAG B
BALESTRA F
GHIBAUDO G
DUTOIT M
Citation: B. Szelag et al., GATE AND SUBSTRATE CURRENTS IN DEEP-SUBMICRON MOSFETS, Journal de physique. IV, 6(C3), 1996, pp. 61-66
Risultati:
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