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Results:
1-13
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Results: 13
Authors:
Cerdeira, A
Estrada, M
Garcia, R
Ortiz-Conde, A
Sanchez, FJG
Citation: A. Cerdeira et al., New procedure for the extraction of basic a-Si : H TFT model parameters inthe linear and saturation regions, SOL ST ELEC, 45(7), 2001, pp. 1077-1080
Authors:
Ortiz-Conde, A
Cerdeira, A
Estrada, M
Sanchez, FJG
Quintero, R
Citation: A. Ortiz-conde et al., A simple procedure to extract the threshold voltage of amorphous thin filmMOSFETs in the saturation region, SOL ST ELEC, 45(5), 2001, pp. 663-667
Authors:
Ortiz-Conde, A
Estrada, M
Cerdeira, A
Sanchez, FJG
De Mercato, G
Citation: A. Ortiz-conde et al., Modeling real junctions by a series combination of two ideal diodes with parallel resistance and its parameter extraction, SOL ST ELEC, 45(2), 2001, pp. 223-228
Authors:
Salcedo, JA
Ortiz-Conde, A
Sanchez, FJG
Muci, J
Liou, JJ
Yue, Y
Citation: Ja. Salcedo et al., New approach for defining the threshold voltage of MOSFETs, IEEE DEVICE, 48(4), 2001, pp. 809-813
Authors:
Sanchez, FJG
Ortiz-Conde, A
De Mercato, G
Salcedo, JA
Liou, JJ
Yue, Y
Citation: Fjg. Sanchez et al., New simple procedure to determine the threshold voltage of MOSFETs, SOL ST ELEC, 44(4), 2000, pp. 673-675
Authors:
Ortiz-Conde, A
Sanchez, FJG
Muci, J
Citation: A. Ortiz-conde et al., Exact analytical solutions of the forward non-ideal diode equation with series and shunt parasitic resistances, SOL ST ELEC, 44(10), 2000, pp. 1861-1864
Authors:
Sanchez, FJG
Ortiz-Conde, A
Salcedo, JA
Muci, J
Estrada, M
Cerdeira, A
Liou, JJ
Yue, Y
Citation: Fjg. Sanchez et al., Validation of bulk-charge effect parameter extraction in MOSFETs, MICROEL REL, 40(6), 2000, pp. 941-945
A new method to extract diode parameters under the presence of parasitic series and shunt resistance
Authors:
Ranuarez, JC
Ortiz-Conde, A
Sanchez, FJG
Citation: Jc. Ranuarez et al., A new method to extract diode parameters under the presence of parasitic series and shunt resistance, MICROEL REL, 40(2), 2000, pp. 355-358
Authors:
Sanchez, FJG
Ortiz-Conde, A
Salcedo, JA
Liou, JJ
Yue, Y
Citation: Fjg. Sanchez et al., A procedure for the extraction of the bulk-charge effect parameter in MOSFET models, SOL ST ELEC, 43(7), 1999, pp. 1295-1298
Authors:
Ortiz-Conde, A
Ma, YS
Thomson, J
Santos, E
Liou, JJ
Sanchez, FJG
Lei, M
Finol, J
Layman, P
Citation: A. Ortiz-conde et al., Direct extraction of semiconductor device parameters using lateral optimization method, SOL ST ELEC, 43(4), 1999, pp. 845-848
Authors:
Ranuarez, JC
Sanchez, FJG
Ortiz-Conde, A
Citation: Jc. Ranuarez et al., Procedure for determining diode parameters at very low forward voltage, SOL ST ELEC, 43(12), 1999, pp. 2129-2133
Authors:
Sanchez, FJG
Ortiz-Conde, A
Liou, JJ
Citation: Fjg. Sanchez et al., On the extraction of the source and drain series resistances of MOSFETs, MICROEL REL, 39(8), 1999, pp. 1173-1184
Authors:
Ortiz-Conde, A
Liou, JJ
Sanchez, FJG
Fernandes, EG
Castillo, OM
Hassan, MDR
De Mercato, G
Citation: A. Ortiz-conde et al., A new method for extracting the effective channel length of MOSFETs, MICROEL REL, 38(12), 1998, pp. 1867-1870
Risultati:
1-13
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