ACNP - Italian Periodicals Catalogue

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Results: 1-15 |

Results: 15

Current crowding in GaN/InGaN light emitting diodes on insulating substrates

Authors: Guo, X Schubert, EF

Citation: X. Guo et Ef. Schubert, Current crowding in GaN/InGaN light emitting diodes on insulating substrates, J APPL PHYS, 90(8), 2001, pp. 4191-4195

Minority electron transport anisotropy in p-type AlxGa1-xN/GaN superlattices

Authors: Chernyak, L Osinsky, A Fuflyigin, VN Graff, JW Schubert, EF

Citation: L. Chernyak et al., Minority electron transport anisotropy in p-type AlxGa1-xN/GaN superlattices, IEEE DEVICE, 48(3), 2001, pp. 433-437

GaN/SiC p-n mesa junctions for HBTs fabricated using selective photoelectrochemical etching

Authors: Graff, JW Schubert, EF Osinsky, A

Citation: Jw. Graff et al., GaN/SiC p-n mesa junctions for HBTs fabricated using selective photoelectrochemical etching, ELECTR LETT, 37(4), 2001, pp. 249-250

Improved mobilities and resistivities in modulation-doped p-type AlGaN/GaNsuperlattices

Authors: Waldron, EL Graff, JW Schubert, EF

Citation: El. Waldron et al., Improved mobilities and resistivities in modulation-doped p-type AlGaN/GaNsuperlattices, APPL PHYS L, 79(17), 2001, pp. 2737-2739

Efficiency of GaN/InGaN light-emitting diodes with interdigitated mesa geometry

Authors: Guo, X Li, YL Schubert, EF

Citation: X. Guo et al., Efficiency of GaN/InGaN light-emitting diodes with interdigitated mesa geometry, APPL PHYS L, 79(13), 2001, pp. 1936-1938

Current crowding and optical saturation effects in GaInN/GaN light-emitting diodes grown on insulating substrates

Authors: Guo, X Schubert, EF

Citation: X. Guo et Ef. Schubert, Current crowding and optical saturation effects in GaInN/GaN light-emitting diodes grown on insulating substrates, APPL PHYS L, 78(21), 2001, pp. 3337-3339

Efficient acceptor activation in AlxGa1-xN/GaN doped superlattices

Authors: Goepfert, ID Schubert, EF Osinsky, R Norris, PE

Citation: Id. Goepfert et al., Efficient acceptor activation in AlxGa1-xN/GaN doped superlattices, MRS I J N S, 5, 2000, pp. NIL_282-NIL_287

Flat free-standing silicon diaphragms using silicon-on-insulator wafers

Authors: Graff, JW Schubert, EF

Citation: Jw. Graff et Ef. Schubert, Flat free-standing silicon diaphragms using silicon-on-insulator wafers, SENS ACTU-A, 84(3), 2000, pp. 276-279

Experimental and theoretical study of acceptor activation and transport properties in p-type AlxGa1-xN/GaN superlattices

Authors: Goepfert, ID Schubert, EF Osinsky, A Norris, PE Faleev, NN

Citation: Id. Goepfert et al., Experimental and theoretical study of acceptor activation and transport properties in p-type AlxGa1-xN/GaN superlattices, J APPL PHYS, 88(4), 2000, pp. 2030-2038

Crystallographic wet chemical etching of p-type GaN

Authors: Stocker, DA Goepfert, ID Schubert, EF Boutros, KS Redwing, JM

Citation: Da. Stocker et al., Crystallographic wet chemical etching of p-type GaN, J ELCHEM SO, 147(2), 2000, pp. 763-764

Electron beam-induced increase of electron diffusion length in p-type GaN and AlGaN/GaN superlattices

Authors: Chernyak, L Osinsky, A Fuflyigin, V Schubert, EF

Citation: L. Chernyak et al., Electron beam-induced increase of electron diffusion length in p-type GaN and AlGaN/GaN superlattices, APPL PHYS L, 77(6), 2000, pp. 875-877

Optically pumped InGaN/GaN lasers with wet-etched facets

Authors: Stocker , DA Schubert, EF Redwing, JM

Citation: Da. Stocker et al., Optically pumped InGaN/GaN lasers with wet-etched facets, APPL PHYS L, 77(26), 2000, pp. 4253-4255

Low-resistance ohmic contacts to p-type GaN

Authors: Li, YL Schubert, EF Graff, JW Osinsky, A Schaff, WF

Citation: Yl. Li et al., Low-resistance ohmic contacts to p-type GaN, APPL PHYS L, 76(19), 2000, pp. 2728-2730

Demonstration of efficient p-type doping in AlxGa1-xN/GaN superlattice structures

Authors: Goepfert, ID Schubert, EF Osinsky, A Norris, PE

Citation: Id. Goepfert et al., Demonstration of efficient p-type doping in AlxGa1-xN/GaN superlattice structures, ELECTR LETT, 35(13), 1999, pp. 1109-1111

Reduction of surface roughness in photoenhanced electrochemical wet-etchedGaN

Authors: Stocker, DA Schubert, EF

Citation: Da. Stocker et Ef. Schubert, Reduction of surface roughness in photoenhanced electrochemical wet-etchedGaN, J ELCHEM SO, 146(7), 1999, pp. 2702-2704

Risultati: 1-15 |