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Results: 1-10 |
Results: 10
Lattice location of hydrogen in Mg doped GaN
Authors: Wampler, WR Myers, SM Wright, AF Barbour, JC Seager, CH Han, J
Citation: Wr. Wampler et al., Lattice location of hydrogen in Mg doped GaN, J APPL PHYS, 90(1), 2001, pp. 108-117
Diffusion, release, and uptake of hydrogen in magnesium-doped gallium nitride: Theory and experiment
Authors: Myers, SM Wright, AF Petersen, GA Wampler, WR Seager, CH Crawford, MH Han, J
Citation: Sm. Myers et al., Diffusion, release, and uptake of hydrogen in magnesium-doped gallium nitride: Theory and experiment, J APPL PHYS, 89(6), 2001, pp. 3195-3202
Simulation of H behavior in p-GaN(Mg) at elevated temperatures
Authors: Myers, SM Wright, AF Petersen, GA Seager, CH Crawford, MH Wampler, WR Han, J
Citation: Sm. Myers et al., Simulation of H behavior in p-GaN(Mg) at elevated temperatures, MRS I J N S, 5, 2000, pp. NIL_424-NIL_429
Lattice location of deuterium in plasma and gas charged Mg doped GaN
Authors: Wampler, WR Barbour, JC Seager, CH Myers, SM Wright, AF Han, J
Citation: Wr. Wampler et al., Lattice location of deuterium in plasma and gas charged Mg doped GaN, MRS I J N S, 5, 2000, pp. NIL_475-NIL_480
Equilibrium state of hydrogen in gallium nitride: Theory and experiment
Authors: Myers, SM Wright, AF Petersen, GA Seager, CH Wampler, WR Crawford, MH Han, J
Citation: Sm. Myers et al., Equilibrium state of hydrogen in gallium nitride: Theory and experiment, J APPL PHYS, 88(8), 2000, pp. 4676-4687
The role of activator-activator interactions in reducing in low-voltage-cathodoluminescence efficiency in Eu and Tb doped phosphors
Authors: Seager, CH Tallant, DR
Citation: Ch. Seager et Dr. Tallant, The role of activator-activator interactions in reducing in low-voltage-cathodoluminescence efficiency in Eu and Tb doped phosphors, J APPL PHYS, 87(9), 2000, pp. 4264-4267
Minority carrier diffusion, defects, and localization in InGaAsN, with 2% nitrogen
Authors: Kurtz, SR Allerman, AA Seager, CH Sieg, RM Jones, ED
Citation: Sr. Kurtz et al., Minority carrier diffusion, defects, and localization in InGaAsN, with 2% nitrogen, APPL PHYS L, 77(3), 2000, pp. 400-402
Influence of vacuum environment on the aging of phosphors at low electron energies
Authors: Seager, CH Tallant, DR Shea, L Zavadil, KR Gnade, B Holloway, PH Bang, JS Zhang, XM Vecht, A Gibbons, CS Trwoga, P Summers, C Wagner, B Penczek, J
Citation: Ch. Seager et al., Influence of vacuum environment on the aging of phosphors at low electron energies, J VAC SCI A, 17(6), 1999, pp. 3509-3515
Ion-implanted hydrogen in gallium nitride
Authors: Myers, SM Han, J Headley, TJ Hills, CR Petersen, GA Seager, CH Wampler, WR
Citation: Sm. Myers et al., Ion-implanted hydrogen in gallium nitride, NUCL INST B, 148(1-4), 1999, pp. 386-390
Infrared and transmission electron microscopy studies of ion-implanted H in GaN
Authors: Seager, CH Myers, SM Petersen, GA Han, J Headley, T
Citation: Ch. Seager et al., Infrared and transmission electron microscopy studies of ion-implanted H in GaN, J APPL PHYS, 85(5), 1999, pp. 2568-2573
Risultati: 1-10 |