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Results:
1-16
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Results: 16
Authors:
Kohn, A
Eizenberg, M
Shacham-Diamand, Y
Sverdlov, Y
Citation: A. Kohn et al., Characterization of electroless deposited Co(W,P) thin films for encapsulation of copper metallization, MAT SCI E A, 302(1), 2001, pp. 18-25
Authors:
Lusky, E
Shacham-Diamand, Y
Bloom, I
Eitan, B
Citation: E. Lusky et al., Characterization of channel hot electron injection by the subthreshold slope of NROM (TM) device, IEEE ELEC D, 22(11), 2001, pp. 556-558
Authors:
Shacham-Diamand, Y
Citation: Y. Shacham-diamand, Barrier layers for Cu ULSI metallization, J ELEC MAT, 30(4), 2001, pp. 336-344
Authors:
Inberg, A
Shacham-Diamand, Y
Rabinovich, E
Golan, G
Croitoru, N
Citation: A. Inberg et al., Material and electrical properties of electroless Ag-W thin film, J ELEC MAT, 30(4), 2001, pp. 355-359
Authors:
Kohn, A
Eizenberg, M
Shacham-Diamand, Y
Israel, B
Sverdlov, Y
Citation: A. Kohn et al., Evaluation of electroless deposited Co(W,P) thin films as diffusion barriers for copper metallization, MICROEL ENG, 55(1-4), 2001, pp. 297-303
Authors:
Shacham-Diamand, Y
Israel, B
Sverdlov, Y
Citation: Y. Shacham-diamand et al., The electrical and material properties of MOS capacitors with electrolessly deposited integrated copper gate, MICROEL ENG, 55(1-4), 2001, pp. 313-322
Authors:
Inberg, A
Shacham-Diamand, Y
Rabinovich, E
Golan, G
Croitoru, N
Citation: A. Inberg et al., Electroless-deposited Ag-W films for microelectronics applications, THIN SOL FI, 389(1-2), 2001, pp. 213-218
Authors:
Shacham-Diamand, Y
Sverdlov, Y
Petrov, N
Citation: Y. Shacham-diamand et al., Electroless deposition of thin-film cobalt-tungsten-phosphorus layers using tungsten phosphoric acid (H-3[P(W3O10)(4)]) for ULSI and MEMS applications, J ELCHEM SO, 148(3), 2001, pp. C162-C167
Authors:
Inberg, A
Zhu, L
Hirschberg, G
Gladkikh, A
Croitoru, N
Shacham-Diamand, Y
Gileadi, E
Citation: A. Inberg et al., Characterization of the initial growth stages of electroless Ag(W) films deposited on Si(100), J ELCHEM SO, 148(12), 2001, pp. C784-C789
Authors:
Shacham-Diamand, Y
Sverdlov, Y
Citation: Y. Shacham-diamand et Y. Sverdlov, Electrochemically deposited thin film alloys for ULSI and MEMS applications, MICROEL ENG, 50(1-4), 2000, pp. 525-531
Authors:
Shacham-Diamand, Y
Inberg, A
Sverdlov, Y
Croitoru, N
Citation: Y. Shacham-diamand et al., Electroless silver and silver with tungsten thin films for microelectronics and microelectromechanical system applications, J ELCHEM SO, 147(9), 2000, pp. 3345-3349
Authors:
Beregovsky, M
Klyuch, A
Raskin, Y
Zinman, Y
Shacham-Diamand, Y
Deal, BE
Citation: M. Beregovsky et al., Protection of silicon wafers from alkali contamination during high-temperature processing using electric field, J ELCHEM SO, 147(10), 2000, pp. 3892-3898
Authors:
Hsu, DT
Shi, FG
Lopatin, S
Shacham-Diamand, Y
Zhao, B
Brongo, M
Vasudev, PK
Citation: Dt. Hsu et al., Electroless copper deposition solution induced chemical changes in low-k fluorinated dielectrics, MAT SC S PR, 2(1), 1999, pp. 19-22
Authors:
Hsu, DT
Shi, FG
Lopatin, S
Shacham-Diamand, Y
Zhao, B
Brongo, M
Vasudev, PK
Citation: Dt. Hsu et al., Change in chemical state of fluorinated polyimides after the electroless Cu deposition solution treatment, J MAT SCI L, 18(18), 1999, pp. 1465-1467
Authors:
Shacham-Diamand, Y
Lopatin, S
Citation: Y. Shacham-diamand et S. Lopatin, Integrated electroless metallization for ULSI, ELECTR ACT, 44(21-22), 1999, pp. 3639-3649
Authors:
Hsu, DT
Iskandar, M
Shi, FG
Lopatin, S
Shacham-Diamand, Y
Tong, HY
Zhao, B
Brongo, M
Vasudev, PK
Citation: Dt. Hsu et al., Compatibility of the low-dielectric-constant poly(arylether) with the electroless copper deposition solution, J ELCHEM SO, 146(12), 1999, pp. 4565-4568
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