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Results:
1-17
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Results: 17
Authors:
Hamamura, H
Komiyama, H
Shimogaki, Y
Citation: H. Hamamura et al., TiN films prepared by flow modulation chemical vapor deposition using TiCl4 and NH3, JPN J A P 1, 40(3A), 2001, pp. 1517-1521
Authors:
Kim, YS
Shimogaki, Y
Citation: Ys. Kim et Y. Shimogaki, X-ray photoelectron spectroscopic characterization of the adhesion behavior of chemical vapor deposited copper films, J VAC SCI A, 19(5), 2001, pp. 2642-2651
Authors:
Sugiyama, M
Feron, O
Sudo, S
Nakano, Y
Tada, K
Komiyama, H
Shimogaki, Y
Citation: M. Sugiyama et al., Kinetics of GaAs metalorganic chemical vapor deposition studied by numerical analysis based on experimental reaction data, JPN J A P 1, 39(4A), 2000, pp. 1642-1649
Authors:
Sugiyama, M
Itoh, H
Aoyama, J
Komiyama, H
Shimogaki, Y
Citation: M. Sugiyama et al., Reaction analysis of aluminum chemical vapor deposition from dimethyl-aluminum-hydride using tubular reactor and Fourier-transform infrared spectroscopy: Theoretical process optimization procedure (1), JPN J A P 1, 39(3A), 2000, pp. 1074-1079
Authors:
Sugiyama, M
Nakajima, T
Tanaka, T
Itoh, H
Aoyama, J
Egashira, Y
Yamashita, K
Komiyama, H
Shimogaki, Y
Citation: M. Sugiyama et al., Elementary surface reaction simulation of aluminum chemical vapor deposition from dimethylaluminumhydride based on ab initio calculations: Theoretical process optimization procedure (2), JPN J A P 1, 39(12A), 2000, pp. 6501-6512
Authors:
Lim, SW
Shimogaki, Y
Nakano, Y
Tada, K
Komiyama, H
Citation: Sw. Lim et al., Decrease in deposition rate and improvement of step coverage by CF4 addition to plasma-enhanced chemical vapor deposition of silicon oxide films, JPN J A P 1, 39(1), 2000, pp. 330-336
Authors:
Kunishige, M
Sugawara, K
Chae, YK
Shimogaki, Y
Komiyama, H
Egashira, Y
Citation: M. Kunishige et al., CVD reactor design using three-dimensional computer simulation - Gas outlet effect, KAG KOG RON, 26(6), 2000, pp. 758-762
Authors:
Tabuchi, M
Takahashi, R
Araki, M
Hirayama, K
Futakuchi, N
Shimogaki, Y
Nakano, Y
Takeda, Y
Citation: M. Tabuchi et al., X-ray CTR scattering measurement of InP/InGaAs/InP interface structures fabricated by different growth processes, APPL SURF S, 159, 2000, pp. 250-255
Authors:
Feron, O
Sugiyama, M
Asawamethapant, W
Futakuchi, N
Feurprier, Y
Nakano, Y
Shimogaki, Y
Citation: O. Feron et al., MOCVD of InGaAsP, InGaAs and InGaP over InP and GaAs substrates: distribution of composition and growth rate in a horizontal reactor, APPL SURF S, 159, 2000, pp. 318-327
Authors:
Hong, LS
Shimogaki, Y
Komjyama, H
Citation: Ls. Hong et al., Macro/microcavity method and its application in modeling chemical vapor deposition reaction systems, THIN SOL FI, 365(2), 2000, pp. 176-188
Authors:
Feron, O
Nakano, Y
Shimogaki, Y
Citation: O. Feron et al., Kinetic study of P and As desorption from binary and ternary III-V semiconductors surface by in situ ellipsometry, J CRYST GR, 221, 2000, pp. 129-135
Authors:
Nakano, T
Nakano, Y
Shimogaki, Y
Citation: T. Nakano et al., Kinetic ellipsometry measurement of InGaP/GaAs hetero-interface formation in MOVPE, J CRYST GR, 221, 2000, pp. 136-141
Authors:
Sugiyama, M
Iino, T
Itoh, H
Aoyama, J
Komiyama, H
Shimogaki, Y
Citation: M. Sugiyama et al., Effect of underlayers on the morphology and orientation of aluminum films prepared by chemical vapor deposition using dimethylaluminumhydride, JPN J A P 2, 38(12B), 1999, pp. L1528-L1531
Authors:
Chae, YK
Egashira, Y
Shimogaki, Y
Sugawara, K
Komiyama, H
Citation: Yk. Chae et al., Experimental and numerical analysis of rapid reaction to initiate the radical chain reactions in WSix CVD (vol 320, pg 151, 1998), THIN SOL FI, 340(1-2), 1999, pp. 317-317
Authors:
Chae, YK
Egashira, Y
Shimogaki, Y
Sugawara, K
Komiyama, H
Citation: Yk. Chae et al., Chemical vapor deposition reactor design using small-scale diagnostic experiments combined with computational fluid dynamics simulations, J ELCHEM SO, 146(5), 1999, pp. 1780-1788
Authors:
Lim, SW
Shimogaki, Y
Nakano, Y
Tada, K
Komiyama, H
Citation: Sw. Lim et al., Changes in orientational polarization and structure of silicon dioxide film by fluorine addition, J ELCHEM SO, 146(11), 1999, pp. 4196-4202
Authors:
Komiyama, H
Shimogaki, Y
Egashira, Y
Citation: H. Komiyama et al., Chemical reaction engineering in the design of CVD reactors, CHEM ENG SC, 54(13-14), 1999, pp. 1941-1957
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