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Results:
1-8
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Results: 8
Authors:
Takemura, Y
Shirakashi, J
Citation: Y. Takemura et J. Shirakashi, Planar-type ferromagnetic tunnel junctions fabricated by atomic force microscope for nonvolatile memory, JPN J A P 1, 40(1), 2001, pp. 128-129
Authors:
Shirakashi, J
Takemura, Y
Citation: J. Shirakashi et Y. Takemura, Tunnel magnetoresistance on ferromagnetic single-electron transistors withmultiple tunnel junction, J APPL PHYS, 89(11), 2001, pp. 7365-7367
Authors:
Sonoda, S
Shimizu, S
Suzuki, Y
Balakrishnan, K
Shirakashi, J
Okumura, H
Citation: S. Sonoda et al., Characterization of polarity of plasma-assisted molecular beam epitaxial GaN{0001} film using coaxial impact collision ion scattering spectroscopy, JPN J A P 2, 39(2A), 2000, pp. L73-L75
Authors:
Takemura, Y
Shirakashi, J
Citation: Y. Takemura et J. Shirakashi, NiFe-based nanostructures fabricated using an atomic force microscope, JPN J A P 2, 39(12B), 2000, pp. L1292-L1293
Authors:
Sonoda, S
Shimizu, S
Suzuki, Y
Balakrishnan, K
Shirakashi, J
Okumura, H
Nishihara, T
Shinohara, M
Citation: S. Sonoda et al., Computer simulation for analysis of lattice polarity of wurtzite GaN{0001}film by coaxial impact collision ion scattering spectroscopy, JPN J A P 2, 38(11A), 1999, pp. L1219-L1221
Authors:
Shirakashi, J
Shimizu, M
Okumura, H
Citation: J. Shirakashi et al., GaN-based quantum-effect electron devices using quantum interference of hot electron waves, PHYS ST S-A, 176(1), 1999, pp. 189-193
Authors:
Matsuzaki, Y
Yuasa, K
Shirakashi, J
Chilla, EK
Yamada, A
Konagai, M
Citation: Y. Matsuzaki et al., Nanofabrication of heavily doped p-type GaAs and n-type InGaP by atomic force microscope (AFM)-based surface oxidation process, J CRYST GR, 202, 1999, pp. 656-659
Authors:
Miyakawa, S
Kim, R
Shirakashi, J
Taniguchi, K
Matsumoto, K
Kamakura, Y
Citation: S. Miyakawa et al., Single electron transistors fabricated with AFM ultrafine nanooxidation process, ELEC C JP 2, 81(10), 1998, pp. 12-18
Risultati:
1-8
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