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Results: 1-9 |
Results: 9
Compact quantum model for a silicon MOS tunnel diode
Authors: Vexler, MI Asli, N Shulekin, AF Meinerzhagen, B Seegebrecht, P
Citation: Mi. Vexler et al., Compact quantum model for a silicon MOS tunnel diode, MICROEL ENG, 59(1-4), 2001, pp. 161-166
Current model considering oxide thickness non-uniformity in a MOS tunnel structure
Authors: Vexler, MI Shulekin, AF Dieker, C Zaporojtschenko, V Zimmermann, H Jager, W Grekhov, IV Seegebrecht, P
Citation: Mi. Vexler et al., Current model considering oxide thickness non-uniformity in a MOS tunnel structure, SOL ST ELEC, 45(1), 2001, pp. 19-25
Threshold energies in the light emission characteristics of silicon MOS tunnel diodes
Authors: Asli, N Vexler, MI Shulekin, AF Yoder, PD Grekhov, IV Seegebrecht, P
Citation: N. Asli et al., Threshold energies in the light emission characteristics of silicon MOS tunnel diodes, MICROEL REL, 41(7), 2001, pp. 1071-1076
Luminescence measurements on MOS tunnel diodes as a method of finding the photon emission rates in silicon
Authors: Asli, N Gastev, SV Grekhov, IV Seegebrecht, P Shulekin, AF Tyaginov, SE Vexler, MI Zimmermann, H
Citation: N. Asli et al., Luminescence measurements on MOS tunnel diodes as a method of finding the photon emission rates in silicon, MAT SC S PR, 3(5-6), 2000, pp. 539-543
The role of impact ionization in the formation of reverse current-voltage characteristics of Al-SiO2-n-Si tunnel structures
Authors: Vexler, MI Grekhov, IV Shulekin, AF
Citation: Mi. Vexler et al., The role of impact ionization in the formation of reverse current-voltage characteristics of Al-SiO2-n-Si tunnel structures, SEMICONDUCT, 34(7), 2000, pp. 775-780
Quantization effects in hole inversion layers of tunnel MOS emitter transistors on Si (100) and (111) substrates at T=300K
Authors: Shulekin, AF Vexler, MI Zimmermann, H
Citation: Af. Shulekin et al., Quantization effects in hole inversion layers of tunnel MOS emitter transistors on Si (100) and (111) substrates at T=300K, SEMIC SCI T, 14(5), 1999, pp. 470-477
Al/SiO2(2.0-2.5 nm)/p-Si tunnel junction as a light emitter
Authors: Asli, N Gastev, SV Grekhov, IV Seegebrecht, P Shulekin, AF Tyaginov, SE Vexler, MI Zimmermann, H
Citation: N. Asli et al., Al/SiO2(2.0-2.5 nm)/p-Si tunnel junction as a light emitter, MICROEL ENG, 48(1-4), 1999, pp. 79-82
Concepts of light emission from a silicon MOS tunnel emitter Auger transistor
Authors: Grekhov, IV Shulekin, AF Vexler, MI Zimmermann, H
Citation: Iv. Grekhov et al., Concepts of light emission from a silicon MOS tunnel emitter Auger transistor, SOL ST ELEC, 43(2), 1999, pp. 417-426
SiC-based phototransistor with a tunnel MOS emitter
Authors: Grekhov, IV Ivanov, PA Samsonova, TP Shulekin, AF Vexler, MI
Citation: Iv. Grekhov et al., SiC-based phototransistor with a tunnel MOS emitter, IEEE DEVICE, 46(3), 1999, pp. 577-579
Risultati: 1-9 |