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Results: 1-25 | 26-41
Results: 1-25/41
Current-induced conditioning of hydrogenated amorphous carbon thin films for field emission
Authors: Carey, JD Silva, SRP
Citation: Jd. Carey et Srp. Silva, Current-induced conditioning of hydrogenated amorphous carbon thin films for field emission, DIAM RELAT, 10(3-7), 2001, pp. 873-877
Electron paramagnetic resonance study of ion implantation induced defects in amorphous hydrogenated carbon
Authors: Jones, BJ Barklie, RC Khan, RUA Carey, JD Silva, SRP
Citation: Bj. Jones et al., Electron paramagnetic resonance study of ion implantation induced defects in amorphous hydrogenated carbon, DIAM RELAT, 10(3-7), 2001, pp. 993-997
Switching phenomena in boron-implanted amorphous carbon films
Authors: Khan, RUA Silva, SRP
Citation: Rua. Khan et Srp. Silva, Switching phenomena in boron-implanted amorphous carbon films, DIAM RELAT, 10(3-7), 2001, pp. 1036-1039
Laser annealing of low temperature grown gallium nitride
Authors: Young, WT Silva, SRP Shannon, JM
Citation: Wt. Young et al., Laser annealing of low temperature grown gallium nitride, DIAM RELAT, 10(3-7), 2001, pp. 1311-1313
A review of the effects of carbon self-implantation into amorphous carbon
Authors: Khan, RUA Silva, SRP
Citation: Rua. Khan et Srp. Silva, A review of the effects of carbon self-implantation into amorphous carbon, DIAM RELAT, 10(2), 2001, pp. 224-229
Proceedings of the 3rd Specialist Meeting on Amorphous Carbon (SMAC 2000) - Mondovi, Italy, 30 August-1 September 2000 - Preface
Authors: Tagliaferro, A Milne, WI Robertson, J Silva, SRP Amaratunga, GAJ
Citation: A. Tagliaferro et al., Proceedings of the 3rd Specialist Meeting on Amorphous Carbon (SMAC 2000) - Mondovi, Italy, 30 August-1 September 2000 - Preface, DIAM RELAT, 10(2), 2001, pp. V-V
Electron field emission from amorphous carbon films as a function of deposition self bias, nitrogen content and substrate resistivity - experiment and simulation
Authors: Forrest, RD Chen, GY Silva, SRP
Citation: Rd. Forrest et al., Electron field emission from amorphous carbon films as a function of deposition self bias, nitrogen content and substrate resistivity - experiment and simulation, MATER CH PH, 72(2), 2001, pp. 204-209
Ion beam synthesis of gallium nitride
Authors: Kench, PJ Shannon, JM Shao, G Tsakiropoulos, P Silva, SRP
Citation: Pj. Kench et al., Ion beam synthesis of gallium nitride, NUCL INST B, 175, 2001, pp. 678-682
Electron delocalization in amorphous carbon by ion implantation - art. no.121201
Authors: Khan, RUA Carey, JD Silva, SRP Jones, BJ Barklie, RC
Citation: Rua. Khan et al., Electron delocalization in amorphous carbon by ion implantation - art. no.121201, PHYS REV B, 6312(12), 2001, pp. 1201
Field emission from amorphous semiconductors
Authors: Carey, JD Silva, SRP
Citation: Jd. Carey et Srp. Silva, Field emission from amorphous semiconductors, SOL ST ELEC, 45(6), 2001, pp. 1017-1024
Conditioning of hydrogenated amorphous carbon thin films for field emission via current stressing
Authors: Carey, JD Silva, SRP
Citation: Jd. Carey et Srp. Silva, Conditioning of hydrogenated amorphous carbon thin films for field emission via current stressing, APPL PHYS L, 78(3), 2001, pp. 347-349
Super sequential lateral growth of Nd : YAG laser crystallized hydrogenated amorphous silicon
Authors: Tang, YF Silva, SRP Rose, MJ
Citation: Yf. Tang et al., Super sequential lateral growth of Nd : YAG laser crystallized hydrogenated amorphous silicon, APPL PHYS L, 78(2), 2001, pp. 186-188
Origin of electric field enhancement in field emission from amorphous carbon thin films
Authors: Carey, JD Forrest, RD Silva, SRP
Citation: Jd. Carey et al., Origin of electric field enhancement in field emission from amorphous carbon thin films, APPL PHYS L, 78(16), 2001, pp. 2339-2341
EPR linewidth variation, spin relaxation times, and exchange in amorphous hydrogenated carbon
Authors: Barklie, RC Collins, M Silva, SRP
Citation: Rc. Barklie et al., EPR linewidth variation, spin relaxation times, and exchange in amorphous hydrogenated carbon, PHYS REV B, 61(5), 2000, pp. 3546-3554
Modification of electron field emission properties from surface treated amorphous carbon thin films
Authors: Carey, JD Poa, CH Forrest, RD Burden, AP Silva, SRP
Citation: Jd. Carey et al., Modification of electron field emission properties from surface treated amorphous carbon thin films, J VAC SCI B, 18(2), 2000, pp. 1051-1053
Low temperature growth of gallium nitride
Authors: Young, WT Silva, SRP Anguita, JV Shannon, JM Homewood, KP Sealy, BJ
Citation: Wt. Young et al., Low temperature growth of gallium nitride, DIAM RELAT, 9(3-6), 2000, pp. 456-459
Studies of carbon ion self-implantation into hydrogenated amorphous carbonfilms
Authors: Khan, RUA Grambole, D Silva, SRP
Citation: Rua. Khan et al., Studies of carbon ion self-implantation into hydrogenated amorphous carbonfilms, DIAM RELAT, 9(3-6), 2000, pp. 675-679
Semiconducting hydrogenated carbon-nitrogen alloys with low defect densities
Authors: Anguita, JV Silva, SRP
Citation: Jv. Anguita et Srp. Silva, Semiconducting hydrogenated carbon-nitrogen alloys with low defect densities, DIAM RELAT, 9(3-6), 2000, pp. 777-780
Characterisation of defects in thin films of hydrogenated amorphous carbon
Authors: Collins, M Barklie, RC Anguita, JV Carey, JD Silva, SRP
Citation: M. Collins et al., Characterisation of defects in thin films of hydrogenated amorphous carbon, DIAM RELAT, 9(3-6), 2000, pp. 781-785
Tailoring of the field emission properties of hydrogenated amorphous carbon thin films by nitrogen incorporation and thermal annealing
Authors: Forrest, RD Khan, RUA Silva, SRP
Citation: Rd. Forrest et al., Tailoring of the field emission properties of hydrogenated amorphous carbon thin films by nitrogen incorporation and thermal annealing, DIAM RELAT, 9(3-6), 2000, pp. 1205-1208
Electronic conduction in ion implanted amorphous carbon thin films
Authors: Khan, RUA Silva, SRP
Citation: Rua. Khan et Srp. Silva, Electronic conduction in ion implanted amorphous carbon thin films, INT J MOD B, 14(2-3), 2000, pp. 195-205
Special issue: Amorphous carbon into the next millennium proceedings of the second international specialist meeting on amorphous carbon - Preface
Authors: Shi, X Silva, SRP Milne, WI Amaratunga, GAJ
Citation: X. Shi et al., Special issue: Amorphous carbon into the next millennium proceedings of the second international specialist meeting on amorphous carbon - Preface, INT J MOD B, 14(2-3), 2000, pp. V-VI
Growth and characterisation of amorphous carbon films doped with nitrogen
Authors: Barradas, NP Khan, RUA Anguita, JV Silva, SRP Kreissig, U Grotzschel, R Moller, W
Citation: Np. Barradas et al., Growth and characterisation of amorphous carbon films doped with nitrogen, NUCL INST B, 161, 2000, pp. 969-974
Electron-energy-loss spectroscopy characterization of the sp(2) bonding fraction within carbon thin films
Authors: Papworth, AJ Kiely, CJ Burden, AP Silva, SRP Amaratunga, GAJ
Citation: Aj. Papworth et al., Electron-energy-loss spectroscopy characterization of the sp(2) bonding fraction within carbon thin films, PHYS REV B, 62(19), 2000, pp. 12628-12631
Ion-implantation into amorphous hydrogenated carbon films
Authors: Khan, RUA Anguita, JV Silva, SRP
Citation: Rua. Khan et al., Ion-implantation into amorphous hydrogenated carbon films, J NON-CRYST, 276(1-3), 2000, pp. 201-205
Risultati: 1-25 | 26-41